オープン アクセスを義務付けられた論文 - Nguyen Tien Son詳細
一般には非公開: 14 件
Conjugated polyelectrolyte blends for electrochromic and electrochemical transistor devices
E Zeglio, M Vagin, C Musumeci, FN Ajjan, R Gabrielsson, XT Trinh, ...
Chemistry of Materials 27 (18), 6385-6393, 2015
委任: Swedish Research Council
Electronic properties of Si-doped AlxGa1− xN with aluminum mole fractions above 80%
F Mehnke, XT Trinh, H Pingel, T Wernicke, E Janzén, NT Son, M Kneissl
Journal of Applied Physics 120 (14), 2016
委任: German Research Foundation, Swedish Research Council
EPR and ENDOR studies of shallow donors in SiC
NT Son, J Isoya, T Umeda, IG Ivanov, A Henry, T Ohshima, E Janzén
Applied Magnetic Resonance 39, 49-85, 2010
委任: Swedish Research Council
Identification of a Frenkel-pair defect in electron-irradiated 3 SiC
NT Son, E Janzén, J Isoya, N Morishita, H Hanaya, H Takizawa, ...
Physical Review B—Condensed Matter and Materials Physics 80 (12), 125201, 2009
委任: Hungarian Scientific Research Fund
Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in silicon carbide
A Csóré, IG Ivanov, NT Son, A Gali
Physical Review B 105 (16), 165108, 2022
委任: Knut and Alice Wallenberg Foundation, Swedish Research Council, European …
Origin of orange color in nominally undoped HVPE GaN crystals
F Zimmermann, FC Beyer, G Gärtner, C Röder, NT Son, E Janzén, ...
Optical Materials 70, 127-130, 2017
委任: Swedish Research Council
Identification of divacancies in 4H-SiC
NT Son, T Umeda, J Isoya, A Gali, M Bockstedte, B Magnusson, A Ellison, ...
Physica B: Condensed Matter 376, 334-337, 2006
委任: German Research Foundation
Radiation-induced defects in GaN
NT Son, CG Hemmingsson, N Morishita, T Ohshima, T Paskova, ...
Physica Scripta 2010 (T141), 014015, 2010
委任: Swedish Research Council
Qudit-Based Spectroscopy for Measurement and Control of Nuclear-Spin Qubits in Silicon Carbide
E Hesselmeier, P Kuna, I Takács, V Ivády, W Knolle, NT Son, M Ghezellou, ...
Physical Review Letters 132 (9), 090601, 2024
委任: Knut and Alice Wallenberg Foundation, Swedish Research Council
Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
V Ivády, B Somogyi, V Zólyomi, A Gällström, NT Son, E Janzén, A Gali
Materials Science Forum 717, 205-210, 2012
委任: Swedish Research Council
First-Principles Study on Photoluminescence Quenching of Divacancy in 4H SiC
A Csо́rе́, B Magnusson, NT Son, A Gällström, T Ohshima, I Ivanov, Á Gali
Materials Science Forum 963, 714-717, 2019
委任: Swedish Research Council, National Office for Research, Development and …
Electronic Defects in Electron-Irradiated Silicon Carbide and III-Nitrides
NT Son, E Janzén
Applications of EPR in Radiation Research, 417-451, 2014
委任: Swedish Research Council
The EI4 EPR centre in 6H SiC
P Carlsson, NT Son, B Magnusson, J Isoya, N Morishita, T Ohshima, ...
Physica Scripta 2010 (T141), 014013, 2010
委任: Swedish Research Council
Point Defects in SiC
Á Gali, M Bockstedte, NT Son, E Janzén
MRS Online Proceedings Library (OPL) 1069, 1069-D03-01, 2008
委任: German Research Foundation
一般公開: 84 件
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
委任: National Natural Science Foundation of China, German Research Foundation …
Negative- System of Carbon Vacancy in -SiC
NT Son, XT Trinh, LS Løvlie, BG Svensson, K Kawahara, J Suda, ...
Physical review letters 109 (18), 187603, 2012
委任: Swedish Research Council
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
委任: German Research Foundation, Knut and Alice Wallenberg Foundation, Swedish …
Divacancy in 4h-sic
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
委任: German Research Foundation
Electrical and optical control of single spins integrated in scalable semiconductor devices
CP Anderson, A Bourassa, KC Miao, G Wolfowicz, PJ Mintun, AL Crook, ...
Science 366 (6470), 1225-1230, 2019
委任: US National Science Foundation, US Department of Defense, Knut and Alice …
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ...
Physical Review X 7 (2), 021046, 2017
委任: US National Science Foundation, US Department of Energy, US Department of …
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