| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent App. 15/617,982, 2018 | 398 | 2018 |
| Diamond on III-nitride device FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart US Patent 10,002,958, 2018 | 398 | 2018 |
| Technique for the dry transfer of epitaxial graphene onto arbitrary substrates JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ... ACS nano 4 (2), 1108-1114, 2010 | 294 | 2010 |
| Quantifying pulsed laser induced damage to graphene M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ... Applied Physics Letters 99 (21), 211909, 2011 | 192 | 2011 |
| Film on Graphene on a Substrate and Method and Devices Therefor F Kub, T Anderson, M Mastro US Patent App. 13/310,347, 2012 | 191 | 2012 |
| Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ... IEEE Electron Device Letters 38 (8), 1097-1100, 2017 | 174 | 2017 |
| Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ... IEEE Electron Device Letters 33 (1), 23-25, 2011 | 169 | 2011 |
| Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties J Anaya, S Rossi, M Alomari, E Kohn, L Tóth, B Pécz, KD Hobart, ... Acta Materialia 103, 141-152, 2016 | 138 | 2016 |
| Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ... Journal of Crystal Growth 350 (1), 21-26, 2012 | 138 | 2012 |
| Room temperature hydrogen detection using Pd-coated GaN nanowires W Lim, JS Wright, BP Gila, JL Johnson, A Ural, T Anderson, F Ren, ... Applied Physics Letters 93 (7), 072109, 2008 | 137 | 2008 |
| Advances in hydrogen, carbon dioxide, and hydrocarbon gas sensor technology using GaN and ZnO-based devices T Anderson, F Ren, S Pearton, BS Kang, HT Wang, CY Chang, J Lin Sensors 9 (6), 4669-4694, 2009 | 119 | 2009 |
| Activation of Mg implanted in GaN by multicycle rapid thermal annealing TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ... Electronics Letters 50 (3), 197-198, 2014 | 115 | 2014 |
| Graphene on Semiconductor Detector FJ Kub, T Anderson, KD Hobart US Patent 20,130,082,241, 2013 | 98 | 2013 |
| III-nitride P-channel field effect transistor with hole carriers in the channel FJ Kub, TJ Anderson, AD Koehler, KD Hobart US Patent 9,006,791, 2015 | 96 | 2015 |
| Graphene on semiconductor detector FJ Kub, T Anderson, KD Hobart US Patent 8,872,159, 2014 | 96 | 2014 |
| Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ... IEEE Electron Device Lett. 35 (8), 826-828, 2014 | 96 | 2014 |
| GaN-On-Diamond HEMT Technology With TAVG = 176°C at PDC,max = 56 W/mm Measured by Transient Thermoreflectance Imaging MJ Tadjer, TJ Anderson, MG Ancona, PE Raad, P Komarov, T Bai, ... IEEE Electron Device Letters 40 (6), 881-884, 2019 | 92 | 2019 |
| On the radiation tolerance of AlGaN/GaN HEMTs BD Weaver, TJ Anderson, AD Koehler, JD Greenlee, JK Hite, DI Shahin, ... ECS Journal of Solid State Science and Technology 5 (7), Q208, 2016 | 90 | 2016 |
| Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates JD Caldwell, KD Hobart, T Anderson, FJ Kub US Patent 8,753,468, 2014 | 89 | 2014 |
| Transistor with enhanced channel charge inducing material layer and threshold voltage control FJ Kub, KD Hobart, CR Eddy Jr, MA Mastro, T Anderson US Patent 8,384,129, 2013 | 87 | 2013 |
