オープン アクセスを義務付けられた論文 - Georges Pavlidis詳細
一般には非公開: 2 件
Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe 2
PM Campbell, A Tarasov, CA Joiner, MY Tsai, G Pavlidis, S Graham, ...
Nanoscale 8 (4), 2268-2276, 2016
委任: US National Science Foundation, Swiss National Science Foundation
Scalable Modeling of Transient Self-Heating of GaN High-Electron-Mobility Transistors Based on Experimental Measurements
A Cutivet, G Pavlidis, B Hassan, M Bouchilaoun, C Rodriguez, A Soltani, ...
IEEE Transactions on Electron Devices 66 (5), 2139-2145, 2019
委任: Natural Sciences and Engineering Research Council of Canada, Fonds de …
一般公開: 12 件
Spontaneous current constriction in threshold switching devices
JM Goodwill, G Ramer, D Li, BD Hoskins, G Pavlidis, JJ McClelland, ...
Nature communications 10 (1), 1628, 2019
委任: US National Science Foundation
Thermal characterization of gallium nitride pin diodes
J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ...
Applied Physics Letters 112 (7), 2018
委任: US Department of Defense
Transient Thermal Characterization of AlGaN/GaN HEMTs Under Pulsed Biasing
G Pavlidis, D Kendig, ER Heller, S Graham
IEEE Transactions on Electron Devices 65 (5), 1753-1758, 2018
委任: US Department of Defense
Revealing the Distribution of Metal Carboxylates in Oil Paint from the Micro‐to Nanoscale
X Ma, V Beltran, G Ramer, G Pavlidis, DY Parkinson, M Thoury, ...
Angewandte Chemie 131 (34), 11778-11782, 2019
委任: US Department of Energy
The Effects of AlN and Copper Back Side Deposition on the Performance of Etched Back GaN/Si HEMTs
G Pavlidis, SH Kim, I Abid, M Zegaoui, F Medjdoub, S Graham
IEEE Electron Device Letters 40 (7), 1060-1063, 2019
委任: European Commission, Agence Nationale de la Recherche
Experimental confirmation of long hyperbolic polariton lifetimes in monoisotopic (10B) hexagonal boron nitride at room temperature
G Pavlidis, JJ Schwartz, J Matson, T Folland, S Liu, JH Edgar, ...
APL materials 9 (9), 2021
委任: US National Science Foundation
Monitoring the Joule heating profile of GaN/SiC high electron mobility transistors via cross-sectional thermal imaging
G Pavlidis, AM Hilton, JL Brown, ER Heller, S Graham
Journal of Applied Physics 128 (7), 2020
委任: US Department of Defense
Thermal environment impact on HfOx RRAM operation: A nanoscale thermometry and modeling study
MP West, G Pavlidis, RH Montgomery, FF Athena, MS Jamil, A Centrone, ...
Journal of Applied Physics 133 (18), 2023
委任: US National Science Foundation, US Department of Defense
Direct Visualization of Chemically Resolved Multilayered Domains in Mixed‐Linker Metal–Organic Frameworks
A Centrone, B Lerma‐Berlanga, AJ Biacchi, C Fernández‐Conde, ...
Advanced Functional Materials 33 (41), 2302357, 2023
委任: European Commission, Government of Spain
Electrical and thermal analysis of vertical GaN-on-GaN PN diodes
L Yates, G Pavlidis, S Graham, S Usami, K Nagamatsu, Y Honda, ...
2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical …, 2018
委任: US National Science Foundation
Assessment of channel temperature in β-(AlxGa1− x) 2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
JS Lundh, G Pavlidis, K Sasaki, A Centrone, JA Spencer, HN Masten, ...
Applied Physics Letters 124 (5), 2024
委任: US National Science Foundation, US Department of Defense
Evaluating the thermal performance of perovskite SrSnO3 field effect transistors
B Bista, P Golani, F Liu, T Truttmann, G Pavlidis, A Centrone, B Jalan, ...
2023 22nd IEEE Intersociety Conference on Thermal and Thermomechanical …, 2023
委任: US National Science Foundation, US Department of Defense
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