フォロー
Nizami Gasanly
Nizami Gasanly
確認したメール アドレス: metu.edu.tr
タイトル
引用先
引用先
Optical phonons and structure of TlGaS2, TlGaSe2, and TlInS2 layer single crystals
NM Gasanly, AF Goncharov, NN Melnik, AS Ragimov, VI Tagirov
physica status solidi (b) 116 (2), 427-443, 1983
851983
Temperature dependence of the first-order Raman scattering in GaS layered crystals
NM Gasanly, A Aydınlı, H Özkan, C Kocabaş
Solid state communications 116 (3), 147-151, 2000
742000
Donor–acceptor pair recombination in gallium sulfide
A Aydinli, NM Gasanly, K Gökşen
Journal of Applied Physics 88 (12), 7144-7149, 2000
732000
Infrared and Raman spectra of layer InSe single crystals
N Hasanlı, VI Tagirov, EA Vinogradov
Wiley, 1978
641978
Donor-acceptor pair recombination in AgIn5S8 single crystals
NM Gasanly, A Serpengüzel, A Aydinli, O Gürlü, I Yilmaz
Journal of applied physics 85 (6), 3198-3201, 1999
631999
Radiative donor-acceptor pair recombination in TlInS2 single crystals
A Aydinli, NM Gasanly, I Yilmaz, A Serpengüzel
Semiconductor science and technology 14 (7), 599, 1999
601999
Raman scattering in some III‐VI layer single crystals
FE Faradev, NM Gasanly, BN Mavrin, NN Melnik
physica status solidi (b) 85 (1), 381-386, 1978
581978
Structural and temperature-dependent optical properties of thermally evaporated CdS thin films
M Isik, HH Gullu, S Delice, M Parlak, NM Gasanly
Materials Science in Semiconductor Processing 93, 148-152, 2019
542019
Gd-doped ZnO nanoparticles: synthesis, structural and thermoluminescence properties
M Isik, NM Gasanly
Journal of Luminescence 207, 220-225, 2019
542019
Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals
NS Yuksek, NM Gasanly, H Ozkan
Semiconductor science and technology 18 (9), 834, 2003
542003
Vibrational Spectra of TlGaTe2, TlInTe2, and TlInSe2 Layer Single Crystals
NM Gasanly, AF Goncharov, BM Dzhavadov, NN Melnik, VI Tagirov, ...
physica status solidi (b) 97 (1), 367-377, 1980
501980
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
AF Qasrawi, NM Gasanly
Materials research bulletin 39 (9), 1351-1357, 2004
442004
Hall effect, space-charge limited current and photoconductivity measurements on TlGaSe2 layered crystals
AF Qasrawi, NM Gasanly
Semiconductor science and technology 19 (3), 505, 2004
422004
Raman study of layer TlGaS2, β‐TlInS2, and TlGaSe2 crystals
NM Gasanly, BN Mavrin, KE Sterin, VI Tagirov, ZD Khalafov
physica status solidi (b) 86 (1), K49-K53, 1978
421978
Vibrational Spectra of Spinel—Type Compound CuIn5S8
N Hasanlı, LG Gasanova, AZ Magomedov
391992
Coexistence of indirect and direct optical transitions, refractive, index and oscillator parameters in TlGaS2, TlGaSe2, and TlInS2 layered single crystals
NM Gasanly
Journal of the Korean Physical Society 57 (1), 164-168, 2010
372010
The nonlinear and saturable absorption characteristics of Ga0. 90In0. 10Se and Ga0. 85In0. 15Se semiconductor crystals and their amorphous thin films
A Karatay, Ç Aksoy, HG Yaglioglu, A Elmali, U Kürüm, A Ateş, N Gasanly
Journal of Optics 13 (7), 075203, 2011
362011
Optoelectronic and electrical properties of TlGaS2 single crystal
AF Qasrawi, NM Gasanly
physica status solidi (a) 202 (13), 2501-2507, 2005
362005
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
NM Gasanly, A Serpengüzel, SMA Baten
Journal of luminescence 86 (1), 39-43, 2000
362000
Photoelectronic and electrical properties of CuIn5S8 single crystals
AF Qasrawi, NM Gasanly
Crystal Research and Technology: Journal of Experimental and Industrial …, 2003
352003
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