| MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao Applied Physics Letters 114 (25), 2019 | 338 | 2019 |
| MOCVD epitaxy of β-(AlxGa1− x) 2O3 thin films on (010) Ga2O3 substrates and N-type doping AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, Z Chen, HL Huang, ... Applied Physics Letters 115 (12), 2019 | 170 | 2019 |
| Phase transformation in MOCVD growth of (AlxGa1− x) 2O3 thin films AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Sarker, M Zhu, ... APL Materials 8 (3), 2020 | 135 | 2020 |
| Probing Charge Transport and Background Doping in Metal‐Organic Chemical Vapor Deposition‐Grown (010) β‐Ga2O3 Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, Z Chen, JF McGlone, ... physica status solidi (RRL)–Rapid Research Letters 14 (8), 2000145, 2020 | 123 | 2020 |
| MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1–x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates AFM Anhar Uddin Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, ... Crystal Growth & Design 20 (10), 6722-6730, 2020 | 100 | 2020 |
| High-Mobility MOCVD β-Ga2O3 Epitaxy with Fast Growth Rate Using Trimethylgallium L Meng, Z Feng, AFMAU Bhuiyan, H Zhao Crystal Growth & Design 22 (6), 3896-3904, 2022 | 79 | 2022 |
| Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition H Ghadi, JF McGlone, CM Jackson, E Farzana, Z Feng, AFM Bhuiyan, ... APL Materials 8 (2), 2020 | 79 | 2020 |
| Electrostatic engineering using extreme permittivity materials for ultra-wide bandgap semiconductor transistors NK Kalarickal, Z Feng, AFMAU Bhuiyan, Z Xia, W Moore, JF McGlone, ... IEEE Transactions on Electron Devices 68 (1), 29-35, 2020 | 63 | 2020 |
| Band offsets of (100) β-(AlxGa1− x) 2O3/β-Ga2O3 heterointerfaces grown via MOCVD AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (25), 2020 | 61 | 2020 |
| Mg acceptor doping in MOCVD (010) β-Ga2O3 Z Feng, AFMAU Bhuiyan, NK Kalarickal, S Rajan, H Zhao Applied Physics Letters 117 (22), 222106, 2020 | 60 | 2020 |
| Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films JM Johnson, HL Huang, M Wang, S Mu, JB Varley, AFM Uddin Bhuiyan, ... APL Materials 9 (5), 2021 | 55 | 2021 |
| MOCVD growth of β-phase (AlxGa1− x) 2O3 on (2¯ 01) β-Ga2O3 substrates AFM Bhuiyan, Z Feng, JM Johnson, HL Huang, J Hwang, H Zhao Applied Physics Letters 117 (14), 2020 | 55 | 2020 |
| Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1− x) 2O3 thin films on m-plane sapphire substrates AFM Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao APL Materials 9 (10), 2021 | 52 | 2021 |
| Vacuum Annealed β-Ga2O3 Recess Channel MOSFETs With 8.56 kV Breakdown Voltage S Sharma, L Meng, AFMAU Bhuiyan, Z Feng, D Eason, H Zhao, ... IEEE Electron Device Letters 43 (12), 2029-2032, 2022 | 45 | 2022 |
| β-Ga2O3 FinFETs with ultra-low hysteresis by plasma-free metal-assisted chemical etching HC Huang, Z Ren, AFM Anhar Uddin Bhuiyan, Z Feng, Z Yang, X Luo, ... Applied Physics Letters 121 (5), 2022 | 44 | 2022 |
| Scaled β-Ga2O3 thin channel MOSFET with 5.4 MV/cm average breakdown field and near 50 GHz fMAX CN Saha, A Vaidya, AFM Bhuiyan, L Meng, S Sharma, H Zhao, ... Applied Physics Letters 122 (18), 2023 | 40 | 2023 |
| Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3 H Ghadi, JF McGlone, Z Feng, AFM Bhuiyan, H Zhao, AR Arehart, ... Applied Physics Letters 117 (17), 2020 | 40 | 2020 |
| Planar and three-dimensional damage-free etching of β-Ga2O3 using atomic gallium flux NK Kalarickal, A Fiedler, S Dhara, HL Huang, AFM Bhuiyan, MW Rahman, ... Applied Physics Letters 119 (12), 2021 | 32 | 2021 |
| MOCVD growth of (010) β-(AlxGa1−x)2O3 thin films AFMAU Bhuiyan, Z Feng, L Meng, H Zhao Journal of Materials Research 36 (23), 4804-4815, 2021 | 28 | 2021 |
| A combined approach of atom probe tomography and unsupervised machine learning to understand phase transformation in (AlxGa1− x) 2O3 J Sarker, S Broderick, AFM Bhuiyan, Z Feng, H Zhao, B Mazumder Applied Physics Letters 116 (15), 2020 | 28 | 2020 |
Hongping ZhaoProfessor of Electrical & Computer Engineering, Materials Science & Engineering, OSU確認したメール アドレス: osu.edu
