| Grain size engineering for ferroelectric Hf0. 5Zr0. 5O2 films by an insertion of Al2O3 interlayer HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ... Applied Physics Letters 105 (19), 2014 | 287 | 2014 |
| Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ... Advanced Materials (Deerfield Beach, Fla.) 25 (14), 1987-1992, 2013 | 205 | 2013 |
| 32× 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory GH Kim, JH Lee, Y Ahn, W Jeon, SJ Song, JY Seok, JH Yoon, KJ Yoon, ... Advanced Functional Materials 23 (11), 1440-1449, 2013 | 201 | 2013 |
| High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties DY Yeom, W Jeon, NDK Tu, SY Yeo, SS Lee, BJ Sung, H Chang, JA Lim, ... Scientific reports 5 (1), 9817, 2015 | 158 | 2015 |
| Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2 films on TiN bottom and TiN or RuO2 top electrodes MH Park, HJ Kim, YJ Kim, W Jeon, T Moon, CS Hwang physica status solidi (RRL)–Rapid Research Letters 8 (6), 532-535, 2014 | 156 | 2014 |
| Titanium dioxide thin films for next-generation memory devices SK Kim, KM Kim, DS Jeong, W Jeon, KJ Yoon, CS Hwang Journal of Materials Research 28 (3), 313-325, 2013 | 118 | 2013 |
| Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications W Jeon Journal of Materials Research, 1-20, 2019 | 103 | 2019 |
| Atomic Layer Deposition of SrTiO3 Films with Cyclopentadienyl-Based Precursors for Metal–Insulator–Metal Capacitors W Lee, JH Han, W Jeon, YW Yoo, SW Lee, SK Kim, CH Ko, ... Chemistry of Materials 25 (6), 953-961, 2013 | 88 | 2013 |
| Structure and Electrical Properties of Al-Doped HfO2 and ZrO2 Films Grown via Atomic Layer Deposition on Mo Electrodes YW Yoo, W Jeon, W Lee, CH An, SK Kim, CS Hwang ACS applied materials & interfaces 6 (24), 22474-22482, 2014 | 83 | 2014 |
| Wafer‐Scale Synthesis of Reliable High‐Mobility Molybdenum Disulfide Thin Films via Inhibitor‐Utilizing Atomic Layer Deposition W Jeon, Y Cho, S Jo, JH Ahn, SJ Jeong Advanced Materials 29 (47), 1703031, 2017 | 76 | 2017 |
| Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure YJ Kim, MH Park, YH Lee, HJ Kim, W Jeon, T Moon, K Do Kim, DS Jeong, ... Scientific Reports 6 (1), 19039, 2016 | 59 | 2016 |
| TiO2∕ Al2O3∕ TiO2 Nanolaminated Thin Films for DRAM Capacitor Deposited by Plasma-Enhanced Atomic Layer Deposition W Jeon, HS Chung, D Joo, SW Kang Electrochemical and Solid-State Letters 11 (2), H19, 2007 | 49 | 2007 |
| Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor W Lee, W Jeon, CH An, MJ Chung, HJ Kim, T Eom, SM George, BK Park, ... Chemistry of Materials 27 (11), 3881-3891, 2015 | 47 | 2015 |
| High-throughput fabrication of infinitely long 10 nm slit arrays for terahertz applications J Jeong, J Rhie, W Jeon, CS Hwang, DS Kim Journal of Infrared, Millimeter, and Terahertz Waves 36, 262-268, 2015 | 40 | 2015 |
| Interfacial charge-induced polarization switching in Al2O3/Pb (Zr, Ti) O3 bi-layer YJ Kim, MH Park, W Jeon, HJ Kim, T Moon, YH Lee, KD Kim, SD Hyun, ... Journal of Applied Physics 118 (22), 2015 | 39 | 2015 |
| Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers JH Han, W Lee, W Jeon, SW Lee, CS Hwang, C Ko, J Gatineau Chemistry of Materials 24 (24), 4686-4692, 2012 | 39 | 2012 |
| Controlling the Electrical Characteristics of ZrO2/Al2O3/ZrO2 Capacitors by Adopting a Ru Top Electrode Grown via Atomic Layer Deposition CH An, W Lee, SH Kim, CJ Cho, DG Kim, DS Kwon, ST Cho, SH Cha, ... physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800454, 2019 | 35 | 2019 |
| Evaluating the Top Electrode Material for Achieving an Equivalent Oxide Thickness Smaller than 0.4 nm from an Al-Doped TiO2 Film W Jeon, S Yoo, HK Kim, W Lee, CH An, MJ Chung, CJ Cho, SK Kim, ... ACS applied materials & interfaces 6 (23), 21632-21637, 2014 | 35 | 2014 |
| Controlling the Al-Doping Profile and Accompanying Electrical Properties of Rutile-Phased TiO2 Thin Films W Jeon, SH Rha, W Lee, YW Yoo, CH An, KH Jung, SK Kim, CS Hwang ACS applied materials & interfaces 6 (10), 7910-7917, 2014 | 33 | 2014 |
| Electrical Properties of ZrO2/Al2O3/ZrO2‐Based Capacitors with TiN, Ru, and TiN/Ru Top Electrode Materials W Lee, CH An, S Yoo, W Jeon, MJ Chung, SH Kim, CS Hwang physica status solidi (RRL)–Rapid Research Letters 12 (10), 1800356, 2018 | 30 | 2018 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National University確認したメール アドレス: snu.ac.kr