| GaN FinFETs and trigate devices for power and RF applications: Review and perspective Y Zhang, A Zubair, Z Liu, M Xiao, J Perozek, Y Ma, T Palacios Semiconductor Science and Technology 36 (5), 054001, 2021 | 115 | 2021 |
| An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics F Zhou, H Gong, M Xiao, Y Ma, Z Wang, X Yu, L Li, L Fu, HH Tan, Y Yang, ... Nature Communications 14 (1), 4459, 2023 | 100 | 2023 |
| 10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes M Xiao, Y Ma, K Liu, K Cheng, Y Zhang IEEE Electron Device Letters 42 (6), 808-811, 2021 | 95 | 2021 |
| 3.3 kV multi-channel AlGaN/GaN Schottky barrier diodes with P-GaN termination M Xiao, Y Ma, K Cheng, K Liu, A Xie, E Beam, Y Cao, Y Zhang IEEE Electron Device Letters 41 (8), 1177-1180, 2020 | 93 | 2020 |
| Supercompliant and Soft Crystal with Ultralow Thermal Conductivity H Ma, C Li, Y Ma, H Wang, ZW Rouse, Z Zhang, C Slebodnick, A Alatas, ... Physical review letters 123 (15), 155901, 2019 | 51 | 2019 |
| 10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C Y Qin, M Xiao, M Porter, Y Ma, J Spencer, Z Du, AG Jacobs, K Sasaki, ... IEEE Electron Device Letters 44 (8), 1268-1271, 2023 | 49 | 2023 |
| Thermal switching of thermoresponsive polymer aqueous solutions C Li, Y Ma, Z Tian ACS Macro Letters 7 (1), 53-58, 2018 | 46 | 2018 |
| Multi-Channel Monolithic-Cascode HEMT (MC2-HEMT): A New GaN Power Switch up to 10 kV M Xiao, Y Ma, Z Du, V Pathirana, K Cheng, A Xie, E Beam, Y Cao, ... 2021 IEEE International Electron Devices Meeting (IEDM), 5.5. 1-5.5. 4, 2021 | 42 | 2021 |
| Tri-gate GaN junction HEMT Y Ma, M Xiao, Z Du, X Yan, K Cheng, M Clavel, MK Hudait, I Kravchenko, ... Applied Physics Letters 117 (14), 2020 | 39 | 2020 |
| Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage JP Kozak, Q Song, R Zhang, Y Ma, J Liu, Q Li, W Saito, Y Zhang IEEE Transactions on Power Electronics 38 (1), 435-446, 2022 | 34 | 2022 |
| 5 kV multi-channel AlGaN/GaN power Schottky barrier diodes with junction-fin-anode M Xiao, Y Ma, Z Du, X Yan, R Zhang, K Cheng, K Liu, A Xie, E Beam, ... 2020 IEEE International Electron Devices Meeting (IEDM), 5.4. 1-5.4. 4, 2020 | 34 | 2020 |
| NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices M Xiao, B Wang, J Spencer, Y Qin, M Porter, Y Ma, Y Wang, K Sasaki, ... Applied Physics Letters 122 (18), 2023 | 31 | 2023 |
| Simple theoretical model for thermal conductivity of crystalline polymers H Ma, Y Ma, Z Tian ACS Applied Polymer Materials 1 (10), 2566-2570, 2019 | 30 | 2019 |
| Experimental Phonon Dispersion and Lifetimes of Tetragonal CH3NH3PbI3 Perovskite Crystals H Ma, Y Ma, H Wang, C Slebodnick, A Alatas, JJ Urban, Z Tian The journal of physical chemistry letters 10 (1), 1-6, 2018 | 27 | 2018 |
| First demonstration of vertical superjunction diode in GaN M Xiao, Y Ma, Z Du, Y Qin, K Liu, K Cheng, F Udrea, A Xie, E Beam, ... 2022 International Electron Devices Meeting (IEDM), 35.6. 1-35.6. 4, 2022 | 26 | 2022 |
| 1 kV GaN-on-Si quasi-vertical Schottky rectifier Y Qin, M Xiao, R Zhang, Q Xie, T Palacios, B Wang, Y Ma, I Kravchenko, ... IEEE Electron Device Letters 44 (7), 1052-1055, 2023 | 18 | 2023 |
| Tri-gate GaN junction HEMTs: physics and performance space Y Ma, M Xiao, Z Du, H Wang, Y Zhang IEEE Transactions on Electron Devices 68 (10), 4854-4861, 2021 | 18 | 2021 |
| Evaluation of 650V, 100A direct-drive GaN power switch for electric vehicle powertrain applications Q Song, JP Kozak, M Xiao, Y Ma, B Wang, R Zhang, R Volkov, K Smith, ... 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA …, 2021 | 16 | 2021 |
| 2 kV, 0.7 mΩ•cm2 Vertical Ga2O3 Superjunction Schottky Rectifier with Dynamic Robustness Y Qin, M Porter, M Xiao, Z Du, H Zhang, Y Ma, J Spencer, B Wang, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 15 | 2023 |
| Wide‐bandgap nickel oxide with tunable acceptor concentration for multidimensional power devices Y Ma, Y Qin, M Porter, J Spencer, Z Du, M Xiao, B Wang, Y Wang, ... Advanced Electronic Materials 11 (1), 2300662, 2025 | 14 | 2025 |
