| Ferroelectricity in HfO2 enables nonvolatile data storage in 28 nm HKMG J Müller, E Yurchuk, T Schlösser, J Paul, R Hoffmann, S Müller, D Martin, ... 2012 symposium on VLSI technology (VLSIT), 25-26, 2012 | 335 | 2012 |
| High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769-3774, 2018 | 269 | 2018 |
| A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 138 | 2019 |
| Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... Applied Physics Letters 112 (22), 2018 | 136 | 2018 |
| Interface formation during molecular beam epitaxial growth of neodymium oxide on silicon A Fissel, Z Elassar, O Kirfel, E Bugiel, M Czernohorsky, HJ Osten Journal of applied Physics 99 (7), 2006 | 129 | 2006 |
| Impact of oxygen supply during growth on the electrical properties of crystalline Gd2O3 thin films on Si (001) M Czernohorsky, E Bugiel, HJ Osten, A Fissel, O Kirfel Applied Physics Letters 88 (15), 2006 | 122 | 2006 |
| Introducing crystalline rare‐earth oxides into Si technologies HJ Osten, A Laha, M Czernohorsky, E Bugiel, R Dargis, A Fissel physica status solidi (a) 205 (4), 695-707, 2008 | 112 | 2008 |
| CMOS integration of epitaxial Gd2O3 high-k gate dielectrics HDB Gottlob, T Echtermeyer, T Mollenhauer, JK Efavi, M Schmidt, ... Solid-State Electronics 50 (6), 979-985, 2006 | 64 | 2006 |
| 0.86-nm CET Gate Stacks With EpitaxialHigh-Dielectrics and FUSI NiSi Metal Electrodes HDB Gottlob, T Echtermeyer, M Schmidt, T Mollenhauer, JK Efavi, ... IEEE electron device letters 27 (10), 814-816, 2006 | 56 | 2006 |
| Doping concentration dependent piezoelectric behavior of Si: HfO2 thin-films S Kirbach, M Lederer, S Eßlinger, C Mart, M Czernohorsky, W Weinreich, ... Applied Physics Letters 118 (1), 2021 | 52 | 2021 |
| High-density energy storage in Si-doped hafnium oxide thin films on area-enhanced substrates K Kühnel, M Czernohorsky, C Mart, W Weinreich Journal of Vacuum Science & Technology B 37 (2), 2019 | 47 | 2019 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020 | 45* | 2020 |
| Stability of crystalline Gd2O3 thin films on silicon during rapid thermal annealing M Czernohorsky, D Tetzlaff, E Bugiel, R Dargis, HJ Osten, HDB Gottlob, ... Semiconductor science and technology 23 (3), 035010, 2008 | 43 | 2008 |
| Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ... Advanced Functional Materials 32 (27), 2201737, 2022 | 42 | 2022 |
| Piezoelectric response of polycrystalline silicon‐doped hafnium oxide thin films determined by rapid temperature cycles C Mart, T Kämpfe, R Hoffmann, S Eßlinger, S Kirbach, K Kühnel, ... Advanced Electronic Materials 6 (3), 1901015, 2020 | 40 | 2020 |
| Integration of functional epitaxial oxides into silicon: From high-k application to nanostructures HJ Osten, D Kühne, A Laha, M Czernohorsky, E Bugiel, A Fissel Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007 | 36 | 2007 |
| Characterization of crystalline rare-earth oxide high-K dielectrics grown by molecular beam epitaxy on silicon carbide A Fissel, M Czernohorsky, HJ Osten Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006 | 36 | 2006 |
| Growth and characterization of crystalline gadolinium oxide on silicon carbide for high-K application A Fissel, M Czernohorsky, HJ Osten Superlattices and Microstructures 40 (4-6), 551-556, 2006 | 34 | 2006 |
| Pyroelectric Energy Conversion in Doped Hafnium Oxide (HfO2) Thin Films on Area‐Enhanced Substrates B Hanrahan, C Mart, T Kämpfe, M Czernohorsky, W Weinreich, A Smith Energy Technology 7 (10), 1900515, 2019 | 31 | 2019 |
| Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ... IEEE Transactions on Electron Devices 69 (2), 808-815, 2021 | 29 | 2021 |
Jonas SundqvistSenior Scientist, Fraunhofer CNT確認したメール アドレス: cnt.fraunhofer.de