| Effect of the quantum well thickness on the performance of InGaN photovoltaic cells L Redaelli, A Mukhtarova, S Valdueza-Felip, A Ajay, C Bougerol, ... Applied Physics Letters 105 (13), 2014 | 90 | 2014 |
| Design of broadband high-efficiency superconducting-nanowire single photon detectors L Redaelli, G Bulgarini, S Dobrovolskiy, SN Dorenbos, V Zwiller, ... Superconductor Science and Technology 29 (6), 065016, 2016 | 57 | 2016 |
| Dependence of the photovoltaic performance of pseudomorphic InGaN/GaN multiple-quantum-well solar cells on the active region thickness A Mukhtarova, S Valdueza-Felip, L Redaelli, C Durand, C Bougerol, ... Applied Physics Letters 108 (16), 2016 | 39 | 2016 |
| Polarization-insensitive fiber-coupled superconducting-nanowire single photon detector using a high-index dielectric capping layer A Mukhtarova, L Redaelli, D Hazra, H Machhadani, S Lequien, ... Optics Express 26 (13), 17697-17704, 2018 | 24 | 2018 |
| Pin InGaN homojunctions (10–40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm S Valdueza-Felip, A Ajay, L Redaelli, MP Chauvat, P Ruterana, T Cremel, ... Solar Energy Materials and Solar Cells 160, 355-360, 2017 | 23 | 2017 |
| Design of polarization-insensitive superconducting single photon detectors with high-index dielectrics L Redaelli, V Zwiller, E Monroy, JM Gérard Superconductor Science and Technology 30 (3), 035005, 2017 | 23 | 2017 |
| Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells L Redaelli, A Mukhtarova, A Ajay, A Núñez-Cascajero, S Valdueza-Felip, ... Japanese Journal of Applied Physics 54 (7), 072302, 2015 | 20 | 2015 |
| Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes L Redaelli, M Martens, J Piprek, H Wenzel, C Netzel, A Linke, YV Flores, ... Gallium Nitride Materials and Devices VII 8262, 186-193, 2012 | 16 | 2012 |
| Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al, In) GaN laser diodes J Jeschke, U Zeimer, L Redaelli, S Einfeldt, M Kneissl, M Weyers Applied Physics Letters 105 (17), 2014 | 15 | 2014 |
| Ohmic contacts on N-face N-type GaN after low temperature annealing L Redaelli, A Muhin, S Einfeldt, P Wolter, L Weixelbaum, M Kneissl IEEE Photonics Technology Letters 25 (13), 1278-1281, 2013 | 15 | 2013 |
| Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ... IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015 | 12 | 2015 |
| Index antiguiding in narrow ridge-waveguide (In, Al) GaN-based laser diodes L Redaelli, H Wenzel, M Martens, S Einfeldt, M Kneissl, G Tränkle Journal of Applied Physics 114 (11), 2013 | 11 | 2013 |
| Design and fabrication of GaN-based laser diodes for single-mode and narrow-linewidth applications L Redaelli Cuvillier Verlag, 2013 | 5 | 2013 |
| Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ... CLEO: Science and Innovations, CF1F. 3, 2013 | 1 | 2013 |
| Advanced Superconducting Nanowire Single Photon Detectors for Photonic Quantum Technologies JM Gérard, A Mukhtarova, L Redaelli, H Machhadani, E Monroy, V Zwiller Proceedings 60 (1), 2018 | | 2018 |
| Method for forming a metal contact on a surface of a semiconductor, and device with a metal contact S Einfeldt, L Redaelli, M Kneissl US Patent 9,768,356, 2017 | | 2017 |
| High absorption efficiency and polarization-insensitivity in superconducting-nanowire single-photon detectors L Redaelli, G Bulgarini, S Dobrovolskiy, S Dorenbos, A Mukhtarova, ... Quantum Sensing and Nano Electronics and Photonics XIV 10111, 395-403, 2017 | | 2017 |
| Gain Anisotropy of Laser Diodes on Nonpolar and Semipolar GaN J Rass, T Wernicke, L Redaelli, J Kupec, B Witzigmann, M Brendel, ... International Workshop on Nitride semiconductors (IWN2010), 2010 | | 2010 |
| Facet formation and ohmic contacts for laser diodes on non-and semipolar GaN J Rass, S Ploch, P Vogt, T Wernicke, L Redaelli, S Einfeldt, M Kneissl Verhandlungen der Deutschen Physikalischen Gesellschaft, 2009 | | 2009 |
Eva MonroyCEA, IRIG, PHELIQS-NPSC, Grenoble, France確認したメール アドレス: cea.fr