オープン アクセスを義務付けられた論文 - Hongping Zhao詳細
一般には非公開: 18 件
Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire
MR Karim, BHD Jayatunga, Z Feng, K Kash, H Zhao
Crystal Growth & Design 19 (8), 4661-4666, 2019
委任: US National Science Foundation
Schottky diode characteristics on high-growth rate LPCVD β-Ga2O3 films on (010) and (001) Ga2O3 substrates
S Saha, L Meng, Z Feng, AFM Anhar Uddin Bhuiyan, H Zhao, U Singisetti
Applied Physics Letters 120 (12), 2022
委任: US National Science Foundation, US Department of Defense
Design and development of 1.5 kV vertical GaN pn diodes on HVPE substrate
V Talesara, Y Zhang, Z Chen, H Zhao, W Lu
Journal of Materials Research 36, 4919-4926, 2021
委任: US Department of Energy
Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4
BHD Jayatunga, MR Karim, RA Lalk, O Ohanaka, WRL Lambrecht, ...
Crystal Growth & Design 20 (1), 189-196, 2019
委任: US National Science Foundation
Band Structure Engineering Based on InGaN/ZnGeN2 Heterostructure Quantum Wells for Visible Light Emitters
MR Karim, BH Dinushi Jayatunga, K Zhang, M Zhu, J Hwang, K Kash, ...
Crystal Growth & Design 22 (1), 131-139, 2021
委任: US National Science Foundation, US Department of Energy
GaN Power p–n Diodes on Hydride Vapor Epitaxy GaN Substrates with Near‐Unity Ideality Factor and <0.5 mΩ cm2 Specific On‐Resistance
V Talesara, Y Zhang, Z Chen, H Zhao, W Lu
physica status solidi (RRL)–Rapid Research Letters 16 (4), 2100599, 2022
委任: US Department of Energy
InGaN-ZnSnN2 quantum wells for high efficiency light emitters beyond green
MR Karim, H Zhao
CLEO: Science and Innovations, STh3I. 2, 2018
委任: US National Science Foundation
Pulsed-Mode MOCVD Growth of ZnSn(Ga)N2 and Determination of the Valence Band Offset with GaN
K Zhang, C Hu, AFMAU Bhuiyan, M Zhu, VGT Vangipuram, MR Karim, ...
Crystal Growth & Design 22 (8), 5004-5011, 2022
委任: US National Science Foundation, US Department of Energy
Detailed investigation of MOCVD-grown [beta]-Ga2O3 through quantitative defect spectroscopies
H Ghadi, JF McGlone, Z Feng, AFMAU Bhuiyan, Y Zhang, H Zhao, ...
Oxide-based Materials and Devices XII 11687, 31-37, 2021
委任: US National Science Foundation, US Department of Energy, US Department of …
Low pressure chemical vapor deposition
H Zhao
Gallium Oxide: Materials Properties, Crystal Growth, and Devices, 293-306, 2020
委任: US National Science Foundation, US Department of Defense
Analysis of position and thickness dependence of ZnGeN2 layer in type-II InGaN-ZnGeN2 quantum wells light-emitting diodes
J Grgat, L Han, H Zhao
CLEO: Science and Innovations, STh3I. 5, 2017
委任: US National Science Foundation
Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits
K Zhang, C Hu, VG Thirupakuzi Vangipuram, L Meng, C Chae, M Zhu, ...
Journal of Vacuum Science & Technology B 41 (6), 2023
委任: US Department of Energy
Nanoelectromechanical Resonators Enabled by Si-Doped Semiconducting β-Ga2O3Nanobelts
XQ Zheng, J Lee, S Rafique, H Zhao, PXL Feng
2018 IEEE International Frequency Control Symposium (IFCS), 1-2, 2018
委任: US National Science Foundation, US Department of Defense
Design of AlGaN-Zn (Si, Ge) N2 quantum wells for high-efficiency ultraviolet light emitters
C Hu, K Kash, H Zhao
Journal of Applied Physics 135 (2), 2024
委任: US Department of Energy
Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric
V Talesara, Y Zhang, J Cheng, H Zhao, W Lu
2022 Device Research Conference (DRC), 1-2, 2022
委任: US Department of Energy
MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate
AFMAU Bhuiyan, Z Feng, HL Huang, L Meng, J Hwang, H Zhao
2022 Compound Semiconductor Week (CSW), 1-2, 2022
委任: US National Science Foundation, US Department of Defense
Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces
J Shi, A Krishnan, AFMAU Bhuiyan, YR Koh, K Huynh, A Mauze, S Mu, ...
International Electronic Packaging Technical Conference and Exhibition 85505 …, 2021
委任: US Department of Defense
Ultrawide Bandgap β-Ga2O3: Material Epitaxy, Doping, Heterostructures and Devices
H Zhao
Integrated Photonics Research, Silicon and Nanophotonics, IW2A. 1, 2020
委任: US National Science Foundation, US Department of Defense
一般公開: 86 件
MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties
Z Feng, AFM Anhar Uddin Bhuiyan, MR Karim, H Zhao
Applied Physics Letters 114 (25), 2019
委任: US National Science Foundation, US Department of Defense
Donors and deep acceptors in β-Ga2O3
AT Neal, S Mou, S Rafique, H Zhao, E Ahmadi, JS Speck, KT Stevens, ...
Applied Physics Letters 113 (6), 2018
委任: US Department of Defense
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