| Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures YC Lin, RK Ghosh, R Addou, N Lu, SM Eichfeld, H Zhu, MY Li, X Peng, ... Nature communications 6 (1), 7311, 2015 | 459 | 2015 |
| Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ... ACS nano 9 (9), 9124-9133, 2015 | 308 | 2015 |
| HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ... ACS nano 9 (1), 474-480, 2015 | 258 | 2015 |
| Atomically thin heterostructures based on single-layer tungsten diselenide and graphene YC Lin, CYS Chang, RK Ghosh, J Li, H Zhu, R Addou, B Diaconescu, ... Nano letters 14 (12), 6936-6941, 2014 | 193 | 2014 |
| Remote Plasma Oxidation and Atomic Layer Etching of MoS2 H Zhu, X Qin, L Cheng, A Azcatl, J Kim, RM Wallace ACS Applied Materials & Interfaces 8 (29), 19119-19126, 2016 | 192 | 2016 |
| Defects and Surface Structural Stability of MoTe2 Under Vacuum Annealing H Zhu, Q Wang, L Cheng, R Addou, J Kim, MJ Kim, RM Wallace Acs Nano 11 (11), 11005-11014, 2017 | 161 | 2017 |
| Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ... 2D Materials 4 (4), 045019, 2017 | 153 | 2017 |
| Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study H Zhu, S McDonnell, X Qin, A Azcatl, L Cheng, R Addou, J Kim, PD Ye, ... ACS applied materials & interfaces 7 (23), 13038-13043, 2015 | 100 | 2015 |
| New Mo6Te6 Sub‐Nanometer‐Diameter Nanowire Phase from 2H‐MoTe2 H Zhu, Q Wang, C Zhang, R Addou, K Cho, RM Wallace, MJ Kim Advanced Materials 29 (18), 1606264, 2017 | 83 | 2017 |
| W Te2 thin films grown by beam-interrupted molecular beam epitaxy LA Walsh, R Yue, Q Wang, AT Barton, R Addou, CM Smyth, H Zhu, J Kim, ... 2D Materials 4 (2), 025044, 2017 | 59 | 2017 |
| Transition metal dichalcogenide and hexagonal boron nitride heterostructures grown by molecular beam epitaxy AT Barton, R Yue, S Anwar, H Zhu, X Peng, S McDonnell, N Lu, R Addou, ... Microelectronic Engineering 147, 306-309, 2015 | 58 | 2015 |
| Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices L Cheng, J Lee, H Zhu, AV Ravichandran, Q Wang, AT Lucero, MJ Kim, ... ACS nano 11 (10), 10243-10252, 2017 | 51 | 2017 |
| A comparative study of atomic layer deposition of Al2O3 and HfO2 on AlGaN/GaN X Qin, L Cheng, S McDonnell, A Azcatl, H Zhu, J Kim, RM Wallace Journal of Materials Science: Materials in Electronics 26, 4638-4643, 2015 | 32 | 2015 |
| Atomic layer deposition of layered boron nitride for large-area 2D electronics J Lee, AV Ravichandran, J Mohan, L Cheng, AT Lucero, H Zhu, Z Che, ... ACS applied materials & interfaces 12 (32), 36688-36694, 2020 | 30 | 2020 |
| Surface and interfacial study of atomic layer deposited Al2O3 on MoTe2 and WTe2 H Zhu, R Addou, Q Wang, Y Nie, K Cho, MJ Kim, RM Wallace Nanotechnology 31 (5), 055704, 2019 | 19 | 2019 |
| Surface and interfacial study of half cycle atomic layer deposited Al2O3 on black phosphorus H Zhu, X Qin, A Azcatl, R Addou, S McDonnell, DY Peide, RM Wallace Microelectronic Engineering 147, 1-4, 2015 | 18 | 2015 |
| Microwave dielectric properties of the (1− x) Mg2TiO4–xCaTiO3–y wt.% ZnNb2O6 ceramics system H Zhu, WZ Lu, W Lei Ceramics International 37 (5), 1515-1519, 2011 | 14 | 2011 |
| Simulating deposition of aerosol particles on single fiber surface 付海明， 朱辉 东华大学学报: 英文版, 252-258, 2009 | 10 | 2009 |
| In Situ Heating Study of 2H-MoTe2 to Mo6Te6 Nanowire Phase Transition Q Wang, H Zhu, C Zhang, R Addou, K Cho, RM Wallace, MJ Kim Microscopy and Microanalysis 23 (S1), 1764-1765, 2017 | 4 | 2017 |
| Surface and Interface Characterization of 2D Materials: Transition Metal Dichalcogenide and Black Phosphorous H Zhu | 3 | 2017 |
Robert M. WallaceUniversity of Texas at Dallas確認したメール アドレス: utdallas.edu
