| Silicon quantum electronics FA Zwanenburg, AS Dzurak, A Morello, MY Simmons, LCL Hollenberg, ... Reviews of modern physics 85 (3), 961-1019, 2013 | 1426 | 2013 |
| A single-atom transistor M Fuechsle, JA Miwa, S Mahapatra, H Ryu, S Lee, O Warschkow, ... Nature nanotechnology 7 (4), 242-246, 2012 | 1183 | 2012 |
| Possible spin polarization in a one-dimensional electron gas KJ Thomas, JT Nicholls, MY Simmons, M Pepper, DR Mace, DA Ritchie Physical Review Letters 77 (1), 135, 1996 | 949 | 1996 |
| Nanotechnology: basic science and emerging technologies M Wilson, K Kannangara, B Raguse, M Simmons, G Smith UNSW press, 2002 | 617 | 2002 |
| Atomically precise placement of single dopants in Si SR Schofield, NJ Curson, MY Simmons, FJ Rueß, T Hallam, L Oberbeck, ... Physical review letters 91 (13), 136104, 2003 | 512 | 2003 |
| Ohm’s law survives to the atomic scale B Weber, S Mahapatra, H Ryu, S Lee, A Fuhrer, TCG Reusch, ... Science 335 (6064), 64-67, 2012 | 389 | 2012 |
| Interaction effects in a one-dimensional constriction KJ Thomas, JT Nicholls, NJ Appleyard, MY Simmons, M Pepper, ... Physical Review B 58 (8), 4846, 1998 | 363 | 1998 |
| A two-qubit gate between phosphorus donor electrons in silicon Y He, SK Gorman, D Keith, L Kranz, JG Keizer, MY Simmons Nature 571 (7765), 371-375, 2019 | 362 | 2019 |
| Metal-insulator transition at B= 0 in a dilute two dimensional GaAs-AlGaAs hole gas MY Simmons, AR Hamilton, M Pepper, EH Linfield, PD Rose, DA Ritchie, ... Physical review letters 80 (6), 1292, 1998 | 350 | 1998 |
| A surface code quantum computer in silicon CD Hill, E Peretz, SJ Hile, MG House, M Fuechsle, S Rogge, ... Science advances 1 (9), e1500707, 2015 | 283 | 2015 |
| Towards the fabrication of phosphorus qubits for a silicon quantum computer JL O’Brien, SR Schofield, MY Simmons, RG Clark, AS Dzurak, NJ Curson, ... Physical Review B 64 (16), 161401, 2001 | 279 | 2001 |
| Spectroscopy of few-electron single-crystal silicon quantum dots M Fuechsle, S Mahapatra, FA Zwanenburg, M Friesen, MA Eriksson, ... Nature Nanotechnology 5 (7), 502-505, 2010 | 231 | 2010 |
| Spin-triplet negatively charged excitons in GaAs quantum wells AJ Shields, M Pepper, MY Simmons, DA Ritchie Physical Review B 52 (11), 7841, 1995 | 223 | 1995 |
| Toward atomic-scale device fabrication in silicon using scanning probe microscopy FJ Ruess, L Oberbeck, MY Simmons, KEJ Goh, AR Hamilton, T Hallam, ... Nano Letters 4 (10), 1969-1973, 2004 | 218 | 2004 |
| Quenching of excitonic optical transitions by excess electrons in GaAs quantum wells AJ Shields, M Pepper, DA Ritchie, MY Simmons, GAC Jones Physical Review B 51 (24), 18049, 1995 | 215 | 1995 |
| Spin relaxation in G a A s/A l x Ga 1− x As quantum wells A Malinowski, RS Britton, T Grevatt, RT Harley, DA Ritchie, MY Simmons Physical Review B 62 (19), 13034, 2000 | 175 | 2000 |
| Magneto-optical spectroscopy of positively charged excitons in GaAs quantum wells AJ Shields, JL Osborne, MY Simmons, M Pepper, DA Ritchie Physical Review B 52 (8), R5523, 1995 | 175 | 1995 |
| Spin blockade and exchange in Coulomb-confined silicon double quantum dots B Weber, YHM Tan, S Mahapatra, TF Watson, H Ryu, R Rahman, ... Nature nanotechnology 9 (6), 430-435, 2014 | 174 | 2014 |
| Precession and Motional Slowing of Spin Evolution<? format?> in a High Mobility Two-Dimensional Electron Gas MA Brand, A Malinowski, OZ Karimov, PA Marsden, RT Harley, AJ Shields, ... Physical review letters 89 (23), 236601, 2002 | 173 | 2002 |
| Spin readout and addressability of phosphorus-donor clusters in silicon H Büch, S Mahapatra, R Rahman, A Morello, MY Simmons Nature communications 4 (1), 2017, 2013 | 169 | 2013 |
David A RitchieUniversity of Cambridge and Swansea University確認したメール アドレス: cam.ac.uk