| Recessed-gate enhancement-mode AlGaN/GaN heterostructure field-effect transistors on Si with record DC performance H Hahn, G Lükens, N Ketteniss, H Kalisch, A Vescan Applied Physics Express 4 (11), 114102, 2011 | 88 | 2011 |
| First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors H Hahn, B Reuters, S Kotzea, G Lükens, S Geipel, H Kalisch, A Vescan 72nd Device Research Conference, 259-260, 2014 | 69 | 2014 |
| Self-aligned process for selectively etched p-GaN-gated AlGaN/GaN-on-Si HFETs G Lükens, H Hahn, H Kalisch, A Vescan IEEE Transactions on Electron Devices 65 (9), 3732-3738, 2018 | 55 | 2018 |
| Effect of carbon doping level on static and dynamic properties of AlGaN/GaN heterostructures grown on silicon H Yacoub, T Zweipfennig, G Lükens, H Behmenburg, D Fahle, ... IEEE Transactions on Electron Devices 65 (8), 3192-3198, 2018 | 38 | 2018 |
| Semi-polar {1 0 1} blue and green InGaN/GaN light-emitting diodes on micro-stripe patterned Si (1 0 0) B Reuters, J Strate, A Wille, M Marx, G Lükens, L Heuken, M Heuken, ... Journal of Physics D: Applied Physics 48 (48), 485103, 2015 | 16 | 2015 |
| Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation L Redaelli, H Wenzel, J Piprek, T Weig, S Einfeldt, M Martens, G Lükens, ... IEEE Journal of Quantum Electronics 51 (8), 1-6, 2015 | 12 | 2015 |
| Gallium nitride laser diodes with integrated absorber: on the dynamics of self‐pulsation K Holc, G Lükens, T Weig, K Köhler, J Wagner, UT Schwarz physica status solidi (c) 11 (3‐4), 670-673, 2014 | 8 | 2014 |
| Limitations of threshold voltage engineering of AlGaN/GaN heterostructures by dielectric interface charge density and manipulation by oxygen plasma surface treatments G Lükens, H Yacoub, H Kalisch, A Vescan Journal of Applied Physics 119 (20), 2016 | 7 | 2016 |
| 3D integrated 300° C tunable RF oscillator exploiting AlGaN/GaN HEMT for high temperature applications P Palacios, T Zweipfennig, A Ottaviani, M Saeed, C Beckmann, M Alomari, ... 2021 IEEE MTT-S International Microwave Symposium (IMS), 519-522, 2021 | 6 | 2021 |
| Absorption at large reverse bias in monolithic GaN-based short-pulse-multi-section laser diodes T Weig, G Lükens, K Holc, K Köhler, J Wagner, UT Schwarz Novel In-Plane Semiconductor Lasers XIII 9002, 62-71, 2014 | 5 | 2014 |
| Normally-off transistor topologies in gallium nitride technology G Lükens Dissertation, Rheinisch-Westfälische Technische Hochschule Aachen, 2020, 2020 | 4 | 2020 |
| Limitations for Reliable Operation at Elevated Temperatures of Al2O3/AlGaN/GaN Metal–Insulator–Semiconductor High‐Electron‐Mobility Transistors Grown by … L Heuken, A Ottaviani, D Fahle, T Zweipfennig, G Lükens, H Kalisch, ... physica status solidi (a) 217 (7), 1900697, 2020 | 3 | 2020 |
| Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching losses H Hahn, H Yacoub, T Zweipfennig, G Lukens, S Kotzea, A Debald, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 1 | 2018 |
| Effect of index-antiguiding on the threshold of GaN-based narrow ridge-waveguide laser diodes L Redaelli, H Wenzel, T Weig, G Lükens, S Einfeldt, UT Schwarz, ... CLEO: Science and Innovations, CF1F. 3, 2013 | 1 | 2013 |
| Threshold Voltage Control in AlGaN/GaN/AlGaN Double-Heterostructure MISHFET Utilizing 2-D Electron and Hole Gases A Kirchbrücher, G Lükens, C Beckmann, J Ehrler, Q Shu, J Wieben, ... IEEE Transactions on Electron Devices, 2025 | | 2025 |
| GaN and III-V Devices SE Harrison, Q Shao, CD Frye, LF Voss, RJ Nikolić, J Wang, L Cao, J Xie, ... | | |
Andrei VescanRWTH Aachen確認したメール アドレス: cst.rwth-aachen.de
