| Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules K Cho, M Min, TY Kim, H Jeong, J Pak, JK Kim, J Jang, SJ Yun, YH Lee, ... ACS nano 9 (8), 8044-8053, 2015 | 250 | 2015 |
| Enhancement of photodetection characteristics of MoS 2 field effect transistors using surface treatment with copper phthalocyanine J Pak, J Jang, K Cho, TY Kim, JK Kim, Y Song, WK Hong, M Min, H Lee, ... Nanoscale 7 (44), 18780-18788, 2015 | 126 | 2015 |
| Zero-field polarity-reversible Josephson supercurrent diodes enabled by a proximity-magnetized Pt barrier KR Jeon, JK Kim, J Yoon, JC Jeon, H Han, A Cottet, T Kontos, SSP Parkin Nature Materials 21 (9), 1008-1013, 2022 | 116 | 2022 |
| Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms TY Kim, J Ha, K Cho, J Pak, J Seo, J Park, JK Kim, S Chung, Y Hong, ... ACS nano 11 (10), 10273-10280, 2017 | 95 | 2017 |
| Enhanced charge injection properties of organic field‐effect transistor by molecular implantation doping Y Kim, S Chung, K Cho, D Harkin, WT Hwang, D Yoo, JK Kim, W Lee, ... Advanced Materials 31 (10), 1806697, 2019 | 83 | 2019 |
| Contact‐Engineered Electrical Properties of MoS2 Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules K Cho, J Pak, JK Kim, K Kang, TY Kim, J Shin, BY Choi, S Chung, T Lee Advanced Materials 30 (18), 1705540, 2018 | 80 | 2018 |
| Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 pn heterojunction diodes JK Kim, K Cho, TY Kim, J Pak, J Jang, Y Song, Y Kim, BY Choi, S Chung, ... Scientific reports 6 (1), 1-8, 2016 | 71 | 2016 |
| Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields J Pak, Y Jang, J Byun, K Cho, TY Kim, JK Kim, BY Choi, J Shin, Y Hong, ... ACS nano 12 (7), 7109-7116, 2018 | 64 | 2018 |
| Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure J Pak, I Lee, K Cho, JK Kim, H Jeong, WT Hwang, GH Ahn, K Kang, ... ACS nano 13 (8), 9638-9646, 2019 | 58 | 2019 |
| Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors J Seo, JH Lee, J Pak, K Cho, JK Kim, J Kim, J Jang, H Ahn, SC Lim, ... Advanced science 8 (19), 2102437, 2021 | 50 | 2021 |
| Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors J Jang, JK Kim, J Shin, J Kim, KY Baek, J Park, S Park, YD Kim, ... Science advances 8 (38), eabn3181, 2022 | 48 | 2022 |
| Molecular Dopant‐Dependent Charge Transport in Surface‐Charge‐Transfer‐Doped Tungsten Diselenide Field Effect Transistors JK Kim, K Cho, J Jang, KY Baek, J Kim, J Seo, M Song, J Shin, J Kim, ... Advanced Materials 33 (44), 2101598, 2021 | 41 | 2021 |
| Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors J Kim, K Cho, J Pak, W Lee, J Seo, JK Kim, J Shin, J Jang, KY Baek, J Lee, ... ACS nano 16 (4), 5376-5383, 2022 | 26 | 2022 |
| Analysis of the interface characteristics of CVD-grown monolayer MoS2 by noise measurements TY Kim, Y Song, K Cho, M Amani, GH Ahn, JK Kim, J Pak, S Chung, ... Nanotechnology 28 (14), 145702, 2017 | 19 | 2017 |
| Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors J Seo, K Cho, W Lee, J Shin, JK Kim, J Kim, J Pak, T Lee Nanoscale Research Letters 14, 1-10, 2019 | 17 | 2019 |
| Intrinsic supercurrent non-reciprocity coupled to the crystal structure of a van der Waals Josephson barrier JK Kim, KR Jeon, PK Sivakumar, J Jeon, C Koerner, G Woltersdorf, ... Nature Communications 15 (1), 1120, 2024 | 16 | 2024 |
| Crystallinity-dependent device characteristics of polycrystalline 2D n= 4 Ruddlesden–Popper perovskite photodetectors J Kim, W Lee, K Cho, H Ahn, J Lee, KY Baek, JK Kim, K Kang, T Lee Nanotechnology 32 (18), 185203, 2021 | 14 | 2021 |
| Enhanced output performance of all-solution-processed organic thermoelectrics: spray printing and interface engineering S Hwang, I Jeong, J Park, JK Kim, H Kim, T Lee, J Kwak, S Chung ACS applied materials & interfaces 12 (23), 26250-26257, 2020 | 14 | 2020 |
| Trapped charge modulation at the MoS2/SiO2 interface by a lateral electric field in MoS2 field-effect transistors J Pak, K Cho, JK Kim, Y Jang, J Shin, J Kim, J Seo, S Chung, T Lee Nano Futures 3 (1), 011002, 2019 | 14 | 2019 |
| Analysis of noise generation and electric conduction at grain boundaries in CVD-grown MoS2 field effect transistors JK Kim, Y Song, TY Kim, K Cho, J Pak, BY Choi, J Shin, S Chung, T Lee Nanotechnology 28 (47), 47LT01, 2017 | 13 | 2017 |
TAKHEE LEESeoul National University, Korea確認したメール アドレス: snu.ac.kr
