John C. Bean

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Leonard FeldmanProfessor of Physics and Materials Science確認したメールアドレス: rutgers.edu
J. Murray GibsonProfessor of Mechanical Engineering確認したメールアドレス: eng.famu.fsu.edu
T.P. PearsallEPIC確認したメールアドレス: ieee.org
Raymond T. TungBrooklyn College, Bell Labs確認したメールアドレス: brooklyn.cuny.edu
Joe CampbellProfessor Electrical and Computer Engineering, University of Virginia確認したメールアドレス: virginia.edu
Ian RobinsonBrookhaven Lab確認したメールアドレス: ucl.ac.uk
Abbas OurmazdDistinguished Professor of Physics確認したメールアドレス: uwm.edu
Serge LuryiDistinguished Professor of Electrical Engineering, Stony Brook University確認したメールアドレス: stonybrook.edu
Colin HumphreysQueen Mary University of London確認したメールアドレス: qmul.ac.uk
James M. TourProfessor, Rice University, Department of Chemistry, Materials Science and NanoEngineering, and確認したメールアドレス: rice.edu
eric p kvamProfessor, Materials Engineering, Purdue University確認したメールアドレス: purdue.edu
Thomas VanderveldeTufts University確認したメールアドレス: ece.tufts.edu
George K CellerProfessor of Materials Science, Rutgers University確認したメールアドレス: rci.rutgers.edu
Anders OlssonPearl Laboratories確認したメールアドレス: pearllaboratories.com
Rudolf TrompIBM T.J. Watson Research Center / Leiden University確認したメールアドレス: us.ibm.com
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National Laboratory確認したメールアドレス: bnl.gov
Mircea R. StanVirginia Microelectronics Consortium (VMEC) Professor, University of Virginia確認したメールアドレス: virginia.edu
Jerry TersoffIBM確認したメールアドレス: us.ibm.com
Nathan SwamiProfessor, University of Virginia, Charlottesville, VA確認したメールアドレス: virginia.edu
Garrett S. RoseProfessor, University of Tennessee確認したメールアドレス: utk.edu

フォロー

John C. Bean

Stanford University OR Bell Labs OR University of Virginia OR WeCanFigureThisOut.org

確認したメールアドレス: なし - ホームページ

Semiconductor nanostructures MBE SiGe Sustainable Energy Education


タイトル引用回数順公開年順タイトル順	引用先引用先	年
Magnetization of hard superconductors CP Bean Physical review letters 8 (6), 250, 1962	5721	1962
Calculation of critical layer thickness versus lattice mismatch for Ge_xSi_1−x/Si strained‐layer heterostructures R People, JC Bean Applied Physics Letters 47 (3), 322-324, 1985	2505	1985
Ge_xSi_1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984	1017	1984
Band alignments of coherently strained Ge_xSi_1−x/Si heterostructures on <001> Ge_ySi_1−y substrates R People, JC Bean Applied physics letters 48 (8), 538-540, 1986	465	1986
Measurement of the band gap of GexSi1− x/Si strained‐layer heterostructures DV Lang, R People, JC Bean, AM Sergent Applied Physics Letters 47 (12), 1333-1335, 1985	450	1985
Modulation doping in Ge_xSi_1−x/Si strained layer heterostructures R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ... Applied Physics Letters 45 (11), 1231-1233, 1984	401	1984
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors DH Auston, AM Johnson, PR Smith, JC Bean Applied Physics Letters 37 (4), 371-373, 1980	358	1980
Silicon-based semiconductor heterostructures: column IV bandgap engineering JC Bean Proceedings of the IEEE 80 (4), 571-587, 1992	357	1992
Observation of order-disorder transitions in strained-semiconductor systems A Ourmazd, JC Bean Physical review letters 55 (7), 765, 1985	315	1985
Pseudomorphic growth of Ge_xSi₁₋_x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984	314	1984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff Physical Review B 53 (24), 16334, 1996	303	1996
Misfit dislocations in lattice-mismatched epitaxial films R Hull, JC Bean Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992	298	1992
GexSi1− x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986	294	1986
Raman scattering from Ge_xSi_1−x/Si strained‐layer superlattices F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson Applied physics letters 45 (10), 1138-1140, 1984	293	1984
Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson Thin Solid Films 93 (1-2), 77-90, 1982	261	1982
New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984	246	1984
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon JC Bean, GE Becker, PM Petroff, TE Seidel Journal of Applied Physics 48 (3), 907-913, 1977	243	1977
Growth of single‐crystal CoSi₂ on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982	239	1982
Stability of semiconductor strained‐layer superlattices R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson Applied physics letters 48 (1), 56-58, 1986	202	1986
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	199	1989

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