| Toward smart and ultra‐efficient solid‐state lighting JY Tsao, MH Crawford, ME Coltrin, AJ Fischer, DD Koleske, ... Advanced Optical Materials 2 (9), 809-836, 2014 | 413 | 2014 |
| Optical performance of top-down fabricated InGaN/GaN nanorod light emitting diode arrays Q Li, KR Westlake, MH Crawford, SR Lee, DD Koleske, JJ Figiel, ... Optics express 19 (25), 25528-25534, 2011 | 237 | 2011 |
| Highly aligned, template-free growth and characterization of vertical GaN nanowires on sapphire by metal–organic chemical vapour deposition GT Wang, AA Talin, DJ Werder, JR Creighton, E Lai, RJ Anderson, ... Nanotechnology 17 (23), 5773, 2006 | 199 | 2006 |
| Proton transfer reactions on semiconductor surfaces C Mui, JH Han, GT Wang, CB Musgrave, SF Bent Journal of the American Chemical Society 124 (15), 4027-4038, 2002 | 188 | 2002 |
| Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ... Nano letters 18 (11), 6906-6914, 2018 | 187 | 2018 |
| Single-mode GaN nanowire lasers Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang Optics express 20 (16), 17873-17879, 2012 | 184 | 2012 |
| Nature of the parasitic chemistry during AlGaInN OMVPE JR Creighton, GT Wang, WG Breiland, ME Coltrin Journal of crystal growth 261 (2-3), 204-213, 2004 | 179 | 2004 |
| Reactions of methylamines at the Si (100)-2× 1 surface C Mui, GT Wang, SF Bent, CB Musgrave The Journal of Chemical Physics 114 (22), 10170-10180, 2001 | 169 | 2001 |
| Toward ultimate efficiency: progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes Y Zhao, H Fu, GT Wang, S Nakamura Advances in Optics and Photonics 10 (1), 246-308, 2018 | 150 | 2018 |
| Nonpolar InGaN/GaN core–shell single nanowire lasers C Li, JB Wright, S Liu, P Lu, JJ Figiel, B Leung, WW Chow, I Brener, ... Nano letters 17 (2), 1049-1055, 2017 | 133 | 2017 |
| Tuning the surface charge properties of epitaxial InN nanowires S Zhao, S Fathololoumi, KH Bevan, DP Liu, MG Kibria, Q Li, GT Wang, ... Nano letters 12 (6), 2877-2882, 2012 | 132 | 2012 |
| III-nitride core–shell nanowire arrayed solar cells JJ Wierer Jr, Q Li, DD Koleske, SR Lee, GT Wang Nanotechnology 23 (19), 194007, 2012 | 131 | 2012 |
| Three-dimensional mapping of quantum wells in a GaN/InGaN core–shell nanowire light-emitting diode array JR Riley, S Padalkar, Q Li, P Lu, DD Koleske, JJ Wierer, GT Wang, ... Nano letters 13 (9), 4317-4325, 2013 | 130 | 2013 |
| Spatial distribution of defect luminescence in GaN nanowires Q Li, GT Wang Nano letters 10 (5), 1554-1558, 2010 | 129 | 2010 |
| Photoluminescence, thermal transport, and breakdown in Joule-heated GaN nanowires T Westover, R Jones, JY Huang, G Wang, E Lai, AA Talin Nano letters 9 (1), 257-263, 2009 | 127 | 2009 |
| Nanoscale effects on heterojunction electron gases in GaN/AlGaN core/shell nanowires BM Wong, F Léonard, Q Li, GT Wang Nano letters 11 (8), 3074-3079, 2011 | 118 | 2011 |
| Functionalization of diamond (100) by Diels− Alder chemistry GT Wang, SF Bent, JN Russell, JE Butler, MP D'Evelyn Journal of the American Chemical Society 122 (4), 744-745, 2000 | 116 | 2000 |
| Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires Q Li, GT Wang Applied Physics Letters 97 (18), 2010 | 112 | 2010 |
| Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si (100)-2× 1 and Ge (100)-2× 1 GT Wang, C Mui, CB Musgrave, SF Bent Journal of the American Chemical Society 124 (30), 8990-9004, 2002 | 100 | 2002 |
| Reactions of cyclic aliphatic and aromatic amines on Ge (100)-2× 1 and Si (100)-2× 1 GT Wang, C Mui, JF Tannaci, MA Filler, CB Musgrave, SF Bent The Journal of Physical Chemistry B 107 (21), 4982-4996, 2003 | 95 | 2003 |
Daniel KoleskeTechnical Staff, Sandia National Laboratories確認したメール アドレス: sandia.gov