Unsupervised learning by spike timing dependent plasticity in phase change memory (PCM) synapses S Ambrogio, N Ciocchini, M Laudato, V Milo, A Pirovano, P Fantini, ... Frontiers in neuroscience 10, 56, 2016 | 254 | 2016 |
Logic computation in phase change materials by threshold and memory switching M Cassinerio, N Ciocchini, D Ielmini Advanced Materials 25 (41), 5975-5980, 2013 | 172 | 2013 |
Bipolar switching in chalcogenide phase change memory N Ciocchini, M Laudato, M Boniardi, E Varesi, P Fantini, AL Lacaita, ... Scientific reports 6 (1), 29162, 2016 | 83 | 2016 |
Modeling resistance instabilities of set and reset states in phase change memory with Ge-rich GeSbTe N Ciocchini, E Palumbo, M Borghi, P Zuliani, R Annunziata, D Ielmini IEEE Transactions on Electron Devices 61 (6), 2136-2144, 2014 | 60 | 2014 |
Evidence for non-arrhenius kinetics of crystallization in phase change memory devices N Ciocchini, M Cassinerio, D Fugazza, D Ielmini IEEE transactions on electron devices 60 (11), 3767-3774, 2013 | 44 | 2013 |
Ge L3-edge x-ray absorption near-edge structure study of structural changes accompanying conductivity drift in the amorphous phase of Ge2Sb2Te5 KV Mitrofanov, AV Kolobov, P Fons, X Wang, J Tominaga, Y Tamenori, ... Journal of Applied Physics 115 (17), 2014 | 40 | 2014 |
Apparatuses and methods for accessing variable resistance memory device P Fantini, D Ielmini, N Ciocchini US Patent 9,990,990, 2018 | 32 | 2018 |
Impact of thermoelectric effects on phase change memory characteristics N Ciocchini, M Laudato, A Leone, P Fantini, AL Lacaita, D Ielmini IEEE Transactions on Electron Devices 62 (10), 3264-3271, 2015 | 30 | 2015 |
Modeling of threshold-voltage drift in phase-change memory (PCM) devices N Ciocchini, M Cassinerio, D Fugazza, D Ielmini IEEE transactions on electron devices 59 (11), 3084-3090, 2012 | 24 | 2012 |
Unified reliability modeling of Ge-rich phase change memory for embedded applications N Ciocchini, E Palumbo, M Borghi, P Zuliani, R Annunziata, D Ielmini 2013 IEEE International Electron Devices Meeting, 22.1. 1-22.1. 4, 2013 | 19 | 2013 |
Cell-to-cell and cycle-to-cycle retention statistics in phase-change memory arrays M Rizzi, N Ciocchini, A Montefiori, M Ferro, P Fantini, AL Lacaita, D Ielmini IEEE Transactions on Electron Devices 62 (7), 2205-2211, 2015 | 18 | 2015 |
Pulse-induced crystallization in phase-change memories under set and disturb conditions N Ciocchini, D Ielmini IEEE Transactions on Electron Devices 62 (3), 847-854, 2015 | 18 | 2015 |
Statistics of set transition in phase change memory (PCM) arrays M Rizzi, N Ciocchini, S Caravati, M Bernasconi, P Fantini, D Ielmini 2014 IEEE International Electron Devices Meeting, 29.6. 1-29.6. 4, 2014 | 12 | 2014 |
Evidence for electrically induced drift of threshold voltage in Ge2Sb2Te5 M Cassinerio, N Ciocchini, D Ielmini Applied Physics Letters 103 (2), 2013 | 8 | 2013 |
Modeling of crystallization kinetics in phase change memories for set and read disturb regimes N Ciocchini, D Ielmini 2014 IEEE International Reliability Physics Symposium, 5E. 1.1-5E. 1.6, 2014 | 7 | 2014 |
Intrinsic retention statistics in phase change memory (PCM) arrays M Rizzi, N Ciocchini, A Montefiori, M Ferro, P Fantini, AL Lacaita, D Ielmini 2013 IEEE International Electron Devices Meeting, 21.7. 1-21.7. 3, 2013 | 6 | 2013 |
Reset-induced variability of retention characteristics in phase change memory (PCM) M Rizzi, N Ciocchini, A Montefiori, M Ferro, AL Lacaita, P Fantini, D Ielmini 2014 IEEE International Reliability Physics Symposium, 5E. 4.1-5E. 4.6, 2014 | 4 | 2014 |
Non-Arrhenius pulse-induced crystallization in phase change memories N Ciocchini, M Cassinerio, D Fugazza, D Ielmini 2012 International Electron Devices Meeting, 31.2. 1-31.2. 4, 2012 | 3 | 2012 |
Apparatuses and methods for accessing variable resistance memory device P Fantini, D Ielmini, N Ciocchini US Patent 10,546,636, 2020 | 2 | 2020 |
Threshold voltage drift in phase change memories: scaling and modeling N Ciocchini, M Cassinerio, D Fugazza, D Ielmini MRS Online Proceedings Library (OPL) 1431, mrss12-1431-f04-02, 2012 | 2 | 2012 |