| The EPFL-EKV MOSFET Model Equations for Simulation, Model Version 2.6 M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Technical Report, Eletronics Laboratories (LEG), Swiss Federal Institute of …, 1996 | 230* | 1996 |
| Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model JM Sallese, M Bucher, F Krummenacher, P Fazan Solid-State Electronics 47 (4), 677-683, 2003 | 137 | 2003 |
| An efficient parameter extraction methodology for the EKV MOST model M Bucher, C Lallement, CC Enz Proceedings of International Conference on Microelectronic Test Structures …, 1996 | 132 | 1996 |
| An adjusted constant-current method to determine saturated and linear mode threshold voltage of MOSFETs A Bazigos, M Bucher, J Assenmacher, S Decker, W Grabinski, ... IEEE Transactions on Electron Devices 58 (11), 3751-3758, 2011 | 75 | 2011 |
| Compact model of drain current in short-channel triple-gate FinFETs N Fasarakis, A Tsormpatzoglou, DH Tassis, I Pappas, K Papathanasiou, ... IEEE transactions on electron devices 59 (7), 1891-1898, 2012 | 71 | 2012 |
| Design-oriented characterization of CMOS over the continuum of inversion level and channel length DM Binkley, M Bucher, D Foty ICECS 2000. 7th IEEE International Conference on Electronics, Circuits and …, 2000 | 68 | 2000 |
| Comparison of a BSIM3V3 and EKV MOSFET model for a 0.5/spl mu/m CMOS process and implications for analog circuit design SC Terry, JM Rochelle, DM Binkley, BJ Blalock, DP Foty, M Bucher IEEE transactions on nuclear science 50 (4), 915-920, 2003 | 66 | 2003 |
| Device design engineering for optimum analog/RF performance of nanoscale DG MOSFETs RK Sharma, M Bucher IEEE Transactions on Nanotechnology 11 (5), 992-998, 2012 | 60 | 2012 |
| Accurate MOS modelling for analog circuit simulation using the EKV model M Bucher, C Lallement, C Enz, F Krummenacher 1996 IEEE International Symposium on Circuits and Systems. Circuits and …, 1996 | 60 | 1996 |
| Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation JM Sallese, M Bucher, C Lallement Solid-State Electronics 44 (6), 905-912, 2000 | 53 | 2000 |
| Analytical MOS transistor modelling for analog circuit simulation M Bucher Verlag nicht ermittelbar, 2000 | 48 | 2000 |
| Estimating key parameters in the EKV MOST model for analogue design and simulation GAS Machado, CC Enz, M Bucher Proceedings of ISCAS'95-International Symposium on Circuits and Systems 3 …, 1995 | 48 | 1995 |
| CMOS small-signal and thermal noise modeling at high frequencies A Antonopoulos, M Bucher, K Papathanasiou, N Mavredakis, N Makris, ... IEEE transactions on electron devices 60 (11), 3726-3733, 2013 | 46 | 2013 |
| The EKV 3.0 compact MOS transistor model: accounting for deep-submicron aspects M Bucher, C Enz, F Krummenacher, JM Sallese, C Lallement, AS Porret Proc. MSM Int. Conf., Nanotech 2002, 670-673, 2002 | 46 | 2002 |
| Compact modeling of nanoscale trapezoidal FinFETs N Fasarakis, TA Karatsori, A Tsormpatzoglou, DH Tassis, ... IEEE Transactions on Electron Devices 61 (2), 324-332, 2013 | 43 | 2013 |
| Modelling and characterization of non-uniform substrate doping C Lallement, M Bucher, C Enz Solid-State Electronics 41 (12), 1857-1861, 1997 | 42 | 1997 |
| Analysis of transconductances at all levels of inversion in deep submicron CMOS M Bucher, D Kazazis, F Krummenacher, D Binkley, D Foty, Y Papananos 9th International Conference on Electronics, Circuits and Systems 3, 1183-1186, 2002 | 40 | 2002 |
| A physics-based analytical compact model for the drift region of the HV-MOSFET A Bazigos, F Krummenacher, JM Sallese, M Bucher, E Seebacher, ... IEEE transactions on electron devices 58 (6), 1710-1721, 2011 | 39 | 2011 |
| Scalable Gm/I based MOSFET model M Bucher, C Lallement, C Enz, F Théodoloz, F Krummenacher Int. Semicond. Dev. Research Symp.(ISDRS’97), 615-618, 1997 | 39 | 1997 |
| Accounting for quantum effects and polysilicon depletion from weak to strong inversion in a charge-based design-oriented MOSFET model C Lallement, JM Sallese, M Bucher, W Grabinski, PC Fazan IEEE Transactions on Electron Devices 50 (2), 406-417, 2003 | 36 | 2003 |
Jean-Michel SalleseSenior scientist - Ecole polytechnique Federale de Lausanne確認したメール アドレス: epfl.ch
