Axel Hoffmann

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	전체	2020년 이후
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Bruno K MeyerJustus Liebig University Giessenmailbox.tu-berlin.de의 이메일 확인됨
juergen christenProfessor of Physics, Magdeburg Universityovgu.de의 이메일 확인됨
Christian ThomsenTU Berlintu-berlin.de의 이메일 확인됨
Markus R. WagnerPaul-Drude-Institut für Festkörperelektronikpdi-berlin.de의 이메일 확인됨
Gordon CallsenUniversity of Bremen, Institute of Solid State Physicsifp.uni-bremen.de의 이메일 확인됨
Nikolay LedentsovVI Systems GmbHv-i-systems.com의 이메일 확인됨
Ronny KirsteResearch associate, NCSUncsu.edu의 이메일 확인됨
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology Sydneyuts.edu.au의 이메일 확인됨
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAicmab.es의 이메일 확인됨
Christian NenstielTechnische Universität Berlinphysik.tu-berlin.de의 이메일 확인됨
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, Directorbsu.by의 이메일 확인됨
Dagmar GerthsenKITkit.edu의 이메일 확인됨
Kazumasa HiramatsuMie University, Emeritus Professoreelec.mie-u.ac.jp의 이메일 확인됨
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina Statencsu.edu의 이메일 확인됨
Wolfgang GehlhoffProf. Dr., Technische Universität Berlinsol.physik.tu-berlin.de의 이메일 확인됨
Dietz NikolausGeorgia State Universitygsu.edu의 이메일 확인됨
Anna RodinaChief Scientist, Ioffe Institutemail.ioffe.ru의 이메일 확인됨
Andrei SchliwaPrincipal Scientist @ Technische Universität Berlintu-berlin.de의 이메일 확인됨
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)nuee.nagoya-u.ac.jp의 이메일 확인됨
Ramon CollazoProfessor of Materials Science and Engineering, NCSUncsu.edu의 이메일 확인됨

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Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

tu-berlin.de의 이메일 확인됨 - 홈페이지

Semiconductor physics Nanostructures Devices


제목 서지정보순 정렬 연도순 정렬 제목순 정렬	인용 인용	연도
Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	2014	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	781	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	636	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	567*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	558	2002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	396	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	394	1997
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	335	2017
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	327	1995
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	321	1998
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	252	1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	250	2011
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	240	2012
Semiconductor nanostructures D Bimberg Springer, 2008	237	2008
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	224	2001
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	214	2001
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	203	2006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	200	1995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	197	1998
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	196	2002

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