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Ruben Asanovski
Ruben Asanovski
Reliability researcher, imec
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Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures
R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023
292023
A comprehensive gate and drain trapping/detrapping noise model and its implications for thin-dielectric MOSFETs
R Asanovski, P Palestri, E Caruso, L Selmi
IEEE Transactions on Electron Devices 68 (10), 4826-4833, 2021
102021
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications
R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi
2022 International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2022
92022
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise
R Asanovski, P Palestri, L Selmi
Solid-State Electronics 194, 108311, 2022
42022
Importance of charge trapping/detrapping involving the gate electrode on the noise currents of scaled MOSFETs
R Asanovski, P Palestri, L Selmi
IEEE Transactions on Electron Devices 69 (3), 1313-1320, 2022
42022
f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs
R Asanovski, L Selmi, P Palestri, E Caruso
Authorea Preprints, 2023
22023
Assessment of the transient self-heating effect and its impact on the performance of Watt-level RF power amplifier in a FinFET technology
TV Dinh, SW Tam, AJ Scholten, L Tondelli, RMT Pijper, SH Kondapalli, ...
2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024
12024
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques
R Asanovski, J Franco, P Palestri, B Kaczer, L Selmi
Solid-State Electronics 207, 108722, 2023
12023
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes
L Tondelli, R Asanovski, AJ Scholten, TV Dinh, SW Tam, RMT Pijper, ...
IEEE Transactions on Electron Devices, 2024
2024
On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices
L Tondelli, AJ Scholten, R Asanovski, RMT Pijper, TV Dinh, L Selmi
2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 345-348, 2024
2024
Gate oxide reliability: upcoming trends, challenges, and opportunities
B Kaczer, R Degraeve, J Franco, T Grasser, PJ Roussel, E Bury, P Weckx, ...
2024 IEEE Silicon Nanoelectronics Workshop (SNW), 3-4, 2024
2024
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K
R Asanovski, A Grill, J Franco, P Palestri, H Mertens, R Ritzenthaler, ...
Solid-State Electronics 215, 108881, 2024
2024
Rumore dovuto a Trappole in Tecnologie MOSFET all'Avanguardia fino a Temperature Criogeniche
R Asanovski
Università degli studi di Modena e Reggio Emilia, 2024
2024
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis
R Asanovski, H Arimura, JF de Marneffe, P Palestri, N Horiguchi, B Kaczer, ...
IEEE Transactions on Electron Devices, 2024
2024
On the design of LDMOS finFETs in advanced technology nodes
A Ruggieri, L Tondelli, R Asanovski, L Selmi
--, 2024
2024
Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy
R Asanovski, A Grill, J Franco, P Palestri, R Li, S Kubicek, K De Greve, ...
2023 International Conference on Noise and Fluctuations (ICNF), 1-4, 2023
2023
Assessment of Advanced Nanoscale Bulk FinFET's Self-Heating accounting for degraded thermal conductivity at the nanoscale
L Tondelli, R Asanovski, L Selmi
Book of Abstracts, 2023
2023
A new model of the low-frequency trapping/de-trapping noise in nanoscale MOSFETs
R ASANOVSKI
2020
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