Understanding the excess 1/f noise in MOSFETs at cryogenic temperatures R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi IEEE Transactions on Electron Devices 70 (4), 2135-2141, 2023 | 29 | 2023 |
A comprehensive gate and drain trapping/detrapping noise model and its implications for thin-dielectric MOSFETs R Asanovski, P Palestri, E Caruso, L Selmi IEEE Transactions on Electron Devices 68 (10), 4826-4833, 2021 | 10 | 2021 |
New insights on the excess 1/f noise at cryogenic temperatures in 28 nm CMOS and Ge MOSFETs for quantum computing applications R Asanovski, A Grill, J Franco, P Palestri, A Beckers, B Kaczer, L Selmi 2022 International Electron Devices Meeting (IEDM), 30.5. 1-30.5. 4, 2022 | 9 | 2022 |
On the accuracy of the formula used to extract trap density in MOSFETs from 1/f noise R Asanovski, P Palestri, L Selmi Solid-State Electronics 194, 108311, 2022 | 4 | 2022 |
Importance of charge trapping/detrapping involving the gate electrode on the noise currents of scaled MOSFETs R Asanovski, P Palestri, L Selmi IEEE Transactions on Electron Devices 69 (3), 1313-1320, 2022 | 4 | 2022 |
f noise model based on trap-assisted tunneling for ultra-thin oxides MOSFETs R Asanovski, L Selmi, P Palestri, E Caruso Authorea Preprints, 2023 | 2 | 2023 |
Assessment of the transient self-heating effect and its impact on the performance of Watt-level RF power amplifier in a FinFET technology TV Dinh, SW Tam, AJ Scholten, L Tondelli, RMT Pijper, SH Kondapalli, ... 2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2024 | 1 | 2024 |
Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques R Asanovski, J Franco, P Palestri, B Kaczer, L Selmi Solid-State Electronics 207, 108722, 2023 | 1 | 2023 |
Understanding the Self-Heating Effects Measured With the AC Output Conductance Method in Advanced FinFET Nodes L Tondelli, R Asanovski, AJ Scholten, TV Dinh, SW Tam, RMT Pijper, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
On the Output Conductance Dispersion due to Traps and Self-Heating in Large Bulk, FDSOI and FinFET nMOS Devices L Tondelli, AJ Scholten, R Asanovski, RMT Pijper, TV Dinh, L Selmi 2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 345-348, 2024 | | 2024 |
Gate oxide reliability: upcoming trends, challenges, and opportunities B Kaczer, R Degraeve, J Franco, T Grasser, PJ Roussel, E Bury, P Weckx, ... 2024 IEEE Silicon Nanoelectronics Workshop (SNW), 3-4, 2024 | | 2024 |
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K R Asanovski, A Grill, J Franco, P Palestri, H Mertens, R Ritzenthaler, ... Solid-State Electronics 215, 108881, 2024 | | 2024 |
Rumore dovuto a Trappole in Tecnologie MOSFET all'Avanguardia fino a Temperature Criogeniche R Asanovski Università degli studi di Modena e Reggio Emilia, 2024 | | 2024 |
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis R Asanovski, H Arimura, JF de Marneffe, P Palestri, N Horiguchi, B Kaczer, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
On the design of LDMOS finFETs in advanced technology nodes A Ruggieri, L Tondelli, R Asanovski, L Selmi --, 2024 | | 2024 |
Probing Band Tail States in MOSFETs at Cryogenic Temperatures through Noise Spectroscopy R Asanovski, A Grill, J Franco, P Palestri, R Li, S Kubicek, K De Greve, ... 2023 International Conference on Noise and Fluctuations (ICNF), 1-4, 2023 | | 2023 |
Assessment of Advanced Nanoscale Bulk FinFET's Self-Heating accounting for degraded thermal conductivity at the nanoscale L Tondelli, R Asanovski, L Selmi Book of Abstracts, 2023 | | 2023 |
A new model of the low-frequency trapping/de-trapping noise in nanoscale MOSFETs R ASANOVSKI | | 2020 |