| Chlorine-trapped CVD bilayer graphene for resistive pressure sensor with high detection limit and high sensitivity VP Pham, MT Nguyen, JW Park, SS Kwak, DHT Nguyen, MK Mun, ... 2D Materials 4 (2), 025049, 2017 | 34 | 2017 |
| Atomic layer etching of chrome using ion beams JW Park, D San Kim, WO Lee, JE Kim, GY Yeom Nanotechnology 30 (8), 085303, 2018 | 22 | 2018 |
| Low energy BCl3 plasma doping of few-layer graphene VP Pham, DS Kim, KS Kim, JW Park, KC Yang, SH Lee, GY Yeom, ... Science of Advanced Materials 8 (4), 884-890, 2016 | 22 | 2016 |
| Nanoparticles synthesis and modification using solution plasma process MK Mun, WO Lee, JW Park, DS Kim, GY Yeom, DW Kim Applied Science and Convergence Technology 26 (6), 164-173, 2017 | 20 | 2017 |
| Anisotropic atomic layer etching of W using fluorine radicals/oxygen ion beam DS Kim, JE Kim, WO Lee, JW Park, YJ Gill, BH Jeong, GY Yeom Plasma Processes and Polymers 16 (9), 1900081, 2019 | 18 | 2019 |
| In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential JW Park, MG Chae, D San Kim, WO Lee, HD Song, C Choi, GY Yeom Journal of Physics D: Applied Physics 51 (44), 445201, 2018 | 16 | 2018 |
| Atomic layer etching of InGaAs by controlled ion beam JW Park, D San Kim, MK Mun, WO Lee, KS Kim, GY Yeom Journal of Physics D: Applied Physics 50 (25), 254007, 2017 | 13 | 2017 |
| Layer-controlled thinning of black phosphorus by an Ar ion beam JW Park, SK Jang, DH Kang, D San Kim, MH Jeon, WO Lee, KS Kim, ... Journal of Materials Chemistry C 5 (41), 10888-10893, 2017 | 13 | 2017 |
| Plasma induced damage reduction of ultra low-k dielectric by using source pulsed plasma etching for next BEOL interconnect manufacturing JK Jang, HW Tak, YJ Shin, D San Kim, GY Yeom IEEE Transactions on Semiconductor Manufacturing 33 (2), 302-309, 2020 | 12 | 2020 |
| Anisotropic/isotropic atomic layer etching of metals D San Kim, JE Kim, YJ Gill, YJ Jang, YE Kim, KN Kim, GY Yeom, DW Kim Applied Science and Convergence Technology 29 (3), 41-49, 2020 | 11 | 2020 |
| Effect of different pulse modes during Cl2/Ar inductively coupled plasma etching on the characteristics of nanoscale silicon trench formation HJ Kim, L Wen, D San Kim, KH Kim, JW Hong, WJ Chang, S Namgoong, ... Applied Surface Science 596, 153604, 2022 | 10 | 2022 |
| Cyclic etching of silicon oxide using NF3/H2 remote plasma and NH3 gas flow YJ Gill, DS Kim, HS Gil, KH Kim, YJ Jang, YE Kim, GY Yeom Plasma Processes and Polymers 18 (11), 2100063, 2021 | 8 | 2021 |
| Etch characteristics of magnetic tunnel junction materials using H2/NH3 reactive ion beam JE Kim, D San Kim, YJ Gill, YJ Jang, YE Kim, H Cho, BY Won, O Kwon, ... Nanotechnology 32 (5), 055301, 2020 | 7 | 2020 |
| Etch characteristics of nanoscale ultra low-k dielectric using C3H2F6 HW Tak, JK Jang, D Sung, DS Kim, DW Kim, GY Yeom Materials Express 10 (6), 834-840, 2020 | 6 | 2020 |
| Semiconductor device, photoelectronic device, and method for manufacturing transition-metal dichalcogenide thin film GY Yeom, KS Kim, KH Kim, JW Park, D San KIM, YJ Ji, JY Byun US Patent 10,593,819, 2020 | 6 | 2020 |
| Etch Damages of Ovonic Threshold Switch (OTS) Material by Halogen Gas Based-Inductively Coupled Plasmas JW Park, D San Kim, WO Lee, JE Kim, HJ Choi, OI Kwon, SP Chung, ... ECS Journal of Solid State Science and Technology 8 (6), P341, 2019 | 6 | 2019 |
| Hydrophobic surface treatment of carbon black nanoparticles in isopropyl alcohol solution using he/SF6 atmospheric plasma jet MK Mun, LW Ho, JW Park, DS Kim, GY Yeom, DW Kim Journal of Nanoscience and Nanotechnology 17 (11), 8439-8445, 2017 | 6 | 2017 |
| Reactive ion etching of an ovonic threshold switch (OTS) material using hydrogen-based plasmas for non-volatile phase change memories D San Kim, JE Kim, YJ Gill, JW Park, YJ Jang, YE Kim, H Choi, O Kwon, ... RSC advances 10 (59), 36141-36146, 2020 | 5 | 2020 |
| Low temperature silicon nitride grown by very high frequency (VHF, 162MHz) plasma enhanced atomic layer deposition with floating multi-tile electrode YJ Ji, HI Kim, KH Kim, JE Kang, D San Kim, KS Kim, AR Ellingboe, ... Surfaces and Interfaces 33, 102219, 2022 | 4 | 2022 |
| Ion beam etching apparatus GY Yeom, JW Park, D San KIM, JS Oh, DI Sung, YJ Ji, WO Lee, MK Mun, ... US Patent 11,120,975, 2021 | 3 | 2021 |