| Investigation of grain boundaries in BaSi2 epitaxial films on Si (1 1 1) substrates using transmission electron microscopy and electron-beam-induced current technique M Baba, K Toh, K Toko, N Saito, N Yoshizawa, K Jiptner, T Sekiguchi, ... Journal of crystal growth 348 (1), 75-79, 2012 | 186 | 2012 |
| Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing KO Hara, N Usami, K Nakamura, R Takabe, M Baba, K Toko, T Suemasu Applied Physics Express 6 (11), 112302, 2013 | 130 | 2013 |
| Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si (111) R Takabe, KO Hara, M Baba, W Du, N Shimada, K Toko, N Usami, ... Journal of applied physics 115 (19), 2014 | 110 | 2014 |
| Investigation of the recombination mechanism of excess carriers in undoped BaSi2 films on silicon KO Hara, N Usami, K Toh, M Baba, K Toko, T Suemasu Journal of applied physics 112 (8), 2012 | 105 | 2012 |
| In-situ heavily p-type doping of over 1020 cm− 3 in semiconducting BaSi2 thin films for solar cells applications M Ajmal Khan, KO Hara, W Du, M Baba, K Nakamura, M Suzuno, K Toko, ... Applied physics letters 102 (11), 2013 | 98 | 2013 |
| Molecular beam epitaxy of BaSi2 thin films on Si (001) substrates K Toh, KO Hara, N Usami, N Saito, N Yoshizawa, K Toko, T Suemasu Journal of crystal growth 345 (1), 16-21, 2012 | 77 | 2012 |
| Realization of single-phase BaSi2 films by vacuum evaporation with suitable optical properties and carrier lifetime for solar cell applications KO Hara, Y Nakagawa, T Suemasu, N Usami Japanese Journal of Applied Physics 54 (7S2), 07JE02, 2015 | 63 | 2015 |
| Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications W Du, M Baba, K Toko, KO Hara, K Watanabe, T Sekiguchi, N Usami, ... Journal of applied physics 115 (22), 2014 | 60 | 2014 |
| Fabrication of single-phase polycrystalline BaSi2 thin films on silicon substrates by vacuum evaporation for solar cell applications Y Nakagawa, KO Hara, T Suemasu, N Usami Japanese Journal of Applied Physics 54 (8S1), 08KC03, 2015 | 49 | 2015 |
| Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy M Baba, S Tsurekawa, K Watanabe, W Du, K Toko, KO Hara, N Usami, ... Applied physics letters 103 (14), 2013 | 41 | 2013 |
| Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si (001) substrates by electron-beam-induced-current technique M Baba, K Watanabe, KO Hara, K Toko, T Sekiguchi, N Usami, ... Japanese Journal of Applied Physics 53 (7), 078004, 2014 | 40 | 2014 |
| Fabrication and characterization of BaSi2 epitaxial films over 1 µm in thickness on Si (111) R Takabe, K Nakamura, M Baba, W Du, MA Khan, K Toko, M Sasase, ... Japanese Journal of Applied Physics 53 (4S), 04ER04, 2014 | 40 | 2014 |
| Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation CT Trinh, Y Nakagawa, KO Hara, R Takabe, T Suemasu, N Usami Materials Research Express 3 (7), 076204, 2016 | 39 | 2016 |
| Formation of metastable cubic phase in SnS thin films fabricated by thermal evaporation KO Hara, S Suzuki, N Usami Thin Solid Films 639, 7-11, 2017 | 37 | 2017 |
| Structural and electrical characterizations of crack-free BaSi2 thin films fabricated by thermal evaporation KO Hara, J Yamanaka, K Arimoto, K Nakagawa, T Suemasu, N Usami Thin Solid Films 595, 68-72, 2015 | 36 | 2015 |
| N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing KO Hara, Y Hoshi, N Usami, Y Shiraki, K Nakamura, K Toko, T Suemasu Thin Solid Films 557, 90-93, 2014 | 36 | 2014 |
| Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy D Tsukahara, M Baba, S Honda, Y Imai, KO Hara, N Usami, K Toko, ... Journal of applied physics 116 (12), 2014 | 34 | 2014 |
| Simple method for significant improvement of minority-carrier lifetime of evaporated BaSi2 thin film by sputtered-AlOx passivation NM Shaalan, KO Hara, CT Trinh, Y Nakagawa, N Usami Materials Science in Semiconductor Processing 76, 37-41, 2018 | 33 | 2018 |
| Effects of deposition rate on the structure and electron density of evaporated BaSi2 films KO Hara, CT Trinh, K Arimoto, J Yamanaka, K Nakagawa, Y Kurokawa, ... Journal of applied physics 120 (4), 2016 | 33 | 2016 |
| Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers W Du, R Takabe, M Baba, H Takeuchi, KO Hara, K Toko, N Usami, ... Applied physics letters 106 (12), 2015 | 33 | 2015 |
Noritaka UsamiNagoya Universitymaterial.nagoya-u.ac.jp의 이메일 확인됨