| Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films S Vangelista, E Cinquanta, C Martella, M Alia, M Longo, A Lamperti, ... Nanotechnology 27 (17), 175703, 2016 | 81 | 2016 |
| Vibrational and electrical properties of hexagonal La2O3 films I G. Scarel,a A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L ... APPLIED PHYSICS LETTERS 91 (102901), 2007 | 79 | 2007 |
| Resistance switching in amorphous and crystalline binary oxides grown by electron beam evaporation and atomic layer deposition S Spiga, A Lamperti, C Wiemer, M Perego, E Cianci, G Tallarida, HL Lu, ... Microelectronic Engineering 85 (12), 2414-2419, 2008 | 78 | 2008 |
| Spectroscopic ellipsometry study of thin NiO films grown on Si (100) by atomic layer deposition HL Lu, G Scarel, M Alia, M Fanciulli, SJ Ding, DW Zhang Applied Physics Letters 92 (22), 2008 | 78 | 2008 |
| New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices N Huby, G Tallarida, M Kutrzeba, S Ferrari, E Guziewicz, M Godlewski Microelectronic Engineering 85 (12), 2442-2444, 2008 | 58 | 2008 |
| Engineering the growth of MoS2 via atomic layer deposition of molybdenum oxide film precursor C Martella, P Melloni, E Cinquanta, E Cianci, M Alia, M Longo, A Lamperti, ... Adv. Electron. Mater 2 (10), 1600330, 2016 | 53 | 2016 |
| Large Spin‐to‐Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Silicon E Longo, M Belli, M Alia, M Rimoldi, R Cecchini, M Longo, C Wiemer, ... Advanced Functional Materials 32 (4), 2109361, 2022 | 41 | 2022 |
| Thermodynamic stability of high phosphorus concentration in silicon nanostructures M Perego, G Seguini, E Arduca, J Frascaroli, D De Salvador, ... Nanoscale 7 (34), 14469-14475, 2015 | 41 | 2015 |
| Application-Oriented Growth of a Molybdenum Disulfide (MoS2) Single Layer by Means of Parametrically Optimized Chemical Vapor Deposition P Tummala, A Lamperti, M Alia, E Kozma, LG Nobili, A Molle Materials 13 (12), 2786, 2020 | 38 | 2020 |
| Study of the interfaces in resistive switching NiO thin films deposited by both ALD and e-beam coupled with different electrodes (Si, Ni, Pt, W, TiN) A Lamperti, S Spiga, HL Lu, C Wiemer, M Perego, E Cianci, M Alia, ... Microelectronic Engineering 85 (12), 2425-2429, 2008 | 33 | 2008 |
| Microwave irradiation effects on random telegraph signal in a MOSFET E Prati, M Fanciulli, A Calderoni, G Ferrari, M Sampietro Physics Letters A 370 (5-6), 491-493, 2007 | 29 | 2007 |
| Influence of doping elements on the formation rate of silicon nanowires by silver-assisted chemical etching C. Canevali, M. Alia, M. Fanciulli, M. Longo, R. Ruffo, C. Mari Surface & Coatings Technology 280, 37–42, 2015 | 27 | 2015 |
| Spin‐Charge Conversion in Fe/Au/Sb2Te3 Heterostructures as Probed By Spin Pumping Ferromagnetic Resonance E Longo, L Locatelli, M Belli, M Alia, A Kumar, M Longo, M Fanciulli, ... Advanced Materials Interfaces 8 (23), 2101244, 2021 | 21 | 2021 |
| Large Area Growth of Silver and Gold Telluride Ultrathin Films via Chemical Vapor Tellurization S Ghomi, A Lamperti, M Alia, CS Casari, C Grazianetti, A Molle, C Martella Inorganics 12 (1), 33, 2024 | 3 | 2024 |
| The Role of Deposition Temperature and Substrate for Scalable and Uniform Deposition of MoS2 Grown by Vapour-Solid Chemical Reaction S Vangelista, E Cinquanta, C Martella, M Longo, A Lamperti, R Mantovan, ... | | 2015 |
| Influence of the thin film precursor on the structural order of MoS2 deposited by chemical vapor transport C Martella, M Alia, E Cianci, E Cinquanta, A Lamperti, M Longo, ... | | |