팔로우
Francesco Maria Puglisi
Francesco Maria Puglisi
Associate Professor of Electronics, Università di Modena e Reggio Emilia
unimore.it의 이메일 확인됨
제목
인용
인용
연도
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
6522019
Memristive technologies for data storage, computation, encryption, and radio-frequency communication
M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...
Science 376 (6597), eabj9979, 2022
4532022
Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride
C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ...
Advanced functional materials 27 (10), 1604811, 2017
3362017
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
1942021
Advances in non-volatile memory and storage technology
Y Nishi, B Magyari-Kope
Woodhead Publishing, 2019
1492019
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
1362015
Advanced Data Encryption​ using 2D Materials
C Wen, X Li, T Zanotti, FM Puglisi, Y Shi, F Saiz, A Antidormi, S Roche, ...
Advanced Materials 33 (27), 2100185, 2021
1072021
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
902014
An empirical model for RRAM resistance in low-and high-resistance states
FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
902013
Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design
FM Puglisi, N Zagni, L Larcher, P Pavan
IEEE Transactions on Electron Devices 65 (7), 2964-2972, 2018
862018
2D h-BN based RRAM devices
FM Puglisi, L Larcher, C Pan, N Xiao, Y Shi, F Hui, M Lanza
2016 IEEE International Electron Devices Meeting (IEDM), 34.8. 1-34.8. 4, 2016
702016
Smart logic-in-memory architecture for low-power non-von neumann computing
T Zanotti, FM Puglisi, P Pavan
IEEE Journal of the Electron Devices Society 8, 757-764, 2020
682020
“Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
N Zagni, A Chini, FM Puglisi, M Meneghini, G Meneghesso, E Zanoni, ...
IEEE Transactions on Electron Devices 68 (2), 697-703, 2021
642021
RTS noise characterization of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
Solid-State Electronics 84, 160-166, 2013
602013
A Novel Program-Verify Algorithm for Multi-Bit Operation in HfO2 RRAM
FM Puglisi, C Wenger, P Pavan
IEEE Electron Device Letters 36 (10), 1030-1032, 2015
552015
RTN analysis with FHMM as a tool for multi-trap characterization in HfOx RRAM
FM Puglisi, P Pavan
Electron Devices and Solid-State Circuits (EDSSC), 2013 IEEE International …, 2013
532013
Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study
X Li, T Zanotti, T Wang, K Zhu, FM Puglisi, M Lanza
Advanced Functional Materials 31 (27), 2102172, 2021
522021
Bipolar Resistive RAM Based on : Physics, Compact Modeling, and Variability Control
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Journal on Emerging and Selected Topics in Circuits and Systems 6 (2 …, 2016
522016
Factorial hidden Markov model analysis of random telegraph noise in resistive random access memories
FM Puglisi, P Pavan
ECTI Transactions on Electrical Engineering, Electronics, and Communications …, 2014
512014
Random telegraph signal noise properties of HfOx RRAM in high resistive state
FM Puglisi, P Pavan, A Padovani, L Larcher, G Bersuker
2012 Proceedings of the European Solid-State Device Research Conference …, 2012
452012
현재 시스템이 작동되지 않습니다. 나중에 다시 시도해 주세요.
학술자료 1–20