| Room-temperature quantum ballistic transport in monolithic ultrascaled Al–Ge–Al nanowire heterostructures M Sistani, P Staudinger, J Greil, M Holzbauer, H Detz, E Bertagnolli, ... Nano letters 17 (8), 4556-4561, 2017 | 47 | 2017 |
| Ultrascaled germanium nanowires for highly sensitive photodetection at the quantum ballistic limit P Staudinger, M Sistani, J Greil, E Bertagnolli, A Lugstein Nano letters 18 (8), 5030-5035, 2018 | 38 | 2018 |
| Exploring the size limitations of wurtzite III–V film growth P Staudinger, KE Moselund, H Schmid Nano Letters 20 (1), 686-693, 2019 | 37 | 2019 |
| Concurrent zinc-blende and wurtzite film formation by selection of confined growth planes P Staudinger, S Mauthe, KE Moselund, H Schmid Nano Letters 18 (12), 7856-7862, 2018 | 36 | 2018 |
| Microcavity lasers on silicon by template-assisted selective epitaxy of microsubstrates BF Mayer, S Wirths, S Mauthe, P Staudinger, M Sousa, J Winiger, ... IEEE Photonics Technology Letters 31 (13), 1021-1024, 2019 | 33 | 2019 |
| Polarity control in ge nanowires by electronic surface doping M Sistani, P Staudinger, A Lugstein The Journal of Physical Chemistry C 124 (36), 19858-19863, 2020 | 29 | 2020 |
| Wurtzite InP microdisks: from epitaxy to room-temperature lasing P Staudinger, S Mauthe, NV Triviño, S Reidt, KE Moselund, H Schmid Nanotechnology 32 (7), 075605, 2020 | 24 | 2020 |
| Spatially resolved thermoelectric effects in operando semiconductor–metal nanowire heterostructures N Gächter, F Könemann, M Sistani, MG Bartmann, M Sousa, P Staudinger, ... Nanoscale 12 (40), 20590-20597, 2020 | 18 | 2020 |
| Sub-thermionic scalable III-V tunnel field-effect transistors integrated on Si (100) C Convertino, CB Zota, Y Baumgartner, P Staudinger, M Sousa, S Mauthe, ... 2019 IEEE International Electron Devices Meeting (IEDM), 37.1. 1-37.1. 4, 2019 | 18 | 2019 |
| Monolithically integrated InGaAs microdisk lasers on silicon using template-assisted selective epitaxy S Mauthe, B Mayer, M Sousa, G Villares, P Staudinger, H Schmid, ... Nanophotonics VII 10672, 150-158, 2018 | 13 | 2018 |
| Selective area growth by hydride vapor phase epitaxy and optical properties of InAs nanowire arrays G Grégoire, M Zeghouane, C Goosney, NI Goktas, P Staudinger, ... Crystal Growth & Design 21 (9), 5158-5163, 2021 | 8 | 2021 |
| Semiconductor Epitaxy in Superconducting Templates MF Ritter, H Schmid, M Sousa, P Staudinger, DZ Haxell, MA Mueed, ... Nano Letters 21 (23), 9922-9929, 2021 | 7 | 2021 |
| Monolithic Integration of III-V on silicon for photonic and electronic applications S Mauthe, H Schmid, B Mayer, S Wirths, C Convertino, Y Baumgartner, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 7 | 2018 |
| Multi-junction lasers for LiDAR applications P Staudinger, W Pallmann, S Paul, L Marigo, S Marigo, J Boucart, ... High-Power Diode Laser Technology XXI 12403, 14-20, 2023 | 6 | 2023 |
| Importance of As and Ga balance in achieving long GaAs nanowires by selective area epitaxy E Chereau, VG Dubrovskii, G Grégoire, G Avit, P Staudinger, H Schmid, ... Crystal Growth & Design 23 (6), 4401-4409, 2023 | 5 | 2023 |
| Selective area growth of GaAs nanowires and microplatelet arrays on silicon by hydride vapor-phase epitaxy M Zeghouane, G Grégoire, E Chereau, G Avit, P Staudinger, ... Crystal Growth & Design 23 (4), 2120-2127, 2023 | 5 | 2023 |
| Monolithic integration of III-V microdisk lasers on silicon S Mauthe, NV Trivino, M Sousa, P Staudinger, Y Baumgartner, P Tiwari, ... 2019 International Conference on Optical MEMS and Nanophotonics (OMN), 32-33, 2019 | 5 | 2019 |
| Ge quantum wire memristor R Böckle, M Sistani, P Staudinger, MS Seifner, S Barth, A Lugstein Nanotechnology 31 (44), 445204, 2020 | 3 | 2020 |
| Ultrascaled germanium nanowires for highly sensitive and spatially resolved photon detection P Staudinger Wien, 2016 | 3 | 2016 |
| Scaled III-V optoelectronic devices on silicon P Tiwari, S Mauthe, NV Trivino, P Staudinger, M Scherrer, P Wen, D Caimi, ... 2020 International Conference on Numerical Simulation of Optoelectronic …, 2020 | 2 | 2020 |
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