| Topology review and derivation methodology of single-phase transformerless photovoltaic inverters for leakage current suppression W Li, Y Gu, H Luo, W Cui, X He, C Xia IEEE Transactions on Industrial Electronics 62 (7), 4537-4551, 2015 | 710 | 2015 |
| Junction temperature extraction approach with turn-off delay time for high-voltage high-power IGBT modules H Luo, Y Chen, P Sun, W Li, X He IEEE Transactions on Power Electronics 31 (7), 5122-5132, 2015 | 245 | 2015 |
| A short-circuit safe operation area identification criterion for SiC MOSFET power modules PD Reigosa, F Iannuzzo, H Luo, F Blaabjerg IEEE Transactions on Industry Applications 53 (3), 2880-2887, 2016 | 114 | 2016 |
| High off-state impedance gate driver of SiC MOSFETs for crosstalk voltage elimination considering common-source inductance C Li, Z Lu, Y Chen, C Li, H Luo, W Li, X He IEEE Transactions on Power Electronics 35 (3), 2999-3011, 2019 | 95 | 2019 |
| Asymmetrical Duty Cycle-Controlled LLC Resonant Converter With Equivalent Switching Frequency Doubler S Zong, H Luo, W Li, Y Deng, X He IEEE Transactions on Power Electronics 31 (7), 4963-4973, 2015 | 94 | 2015 |
| Decoupling-controlled triport composited DC/DC converter for multiple energy interface W Li, C Xu, H Luo, Y Hu, X He, C Xia IEEE Transactions on Industrial Electronics 62 (7), 4504-4513, 2014 | 87 | 2014 |
| Medium voltage soft-switching DC/DC converter with series-connected SiC MOSFETs Z Lu, C Li, A Zhu, H Luo, C Li, W Li, X He IEEE Transactions on Power Electronics 36 (2), 1451-1462, 2020 | 82 | 2020 |
| Role of threshold voltage shift in highly accelerated power cycling tests for SiC MOSFET modules H Luo, F Iannuzzo, M Turnaturi IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 82 | 2019 |
| Enabling junction temperature estimation via collector-side thermo-sensitive electrical parameters through emitter stray inductance in high-power IGBT modules H Luo, W Li, F Iannuzzo, X He, F Blaabjerg IEEE Transactions on Industrial Electronics 65 (6), 4724-4738, 2017 | 76 | 2017 |
| Investigation and classification of short-circuit failure modes based on three-dimensional safe operating area for high-power IGBT modules Y Chen, W Li, F Iannuzzo, H Luo, X He, F Blaabjerg IEEE Transactions on Power Electronics 33 (2), 1075-1086, 2017 | 71 | 2017 |
| Detection and localization of submodule open-circuit failures for modular multilevel converters with single ring theorem W Zhou, J Sheng, H Luo, W Li, X He IEEE Transactions on Power Electronics 34 (4), 3729-3739, 2018 | 66 | 2018 |
| Aging precursors and degradation effects of SiC-MOSFET modules under highly accelerated power cycling conditions H Luo, F Iannuzzo, F Blaabjerg, M Turnaturi, E Mattiuzzo 2017 IEEE Energy Conversion Congress and Exposition (ECCE), 2506-2511, 2017 | 64 | 2017 |
| Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum During Turn-off for High Power Trench Gate … Y Chen, H Luo, W Li, X He, F Iannuzzo, F Blaabjerg IEEE Transactions on Power Electronics 32 (8), 6394-6404, 2016 | 63 | 2016 |
| Study of current density influence on bond wire degradation rate in SiC MOSFET modules H Luo, F Iannuzzo, N Baker, F Blaabjerg, W Li, X He IEEE Journal of Emerging and Selected Topics in Power Electronics 8 (2 …, 2019 | 58 | 2019 |
| Theoretical evaluation of stability improvement brought by resonant current loop for paralleled LLC converters S Zong, H Luo, W Li, X He, C Xia IEEE Transactions on Industrial Electronics 62 (7), 4170-4180, 2014 | 55 | 2014 |
| Online Junction Temperature Extraction of SiC Power mosfets With Temperature Sensitive Optic Parameter (TSOP) Approach C Li, H Luo, C Li, W Li, H Yang, X He IEEE Transactions on Power Electronics 34 (10), 10143-10152, 2019 | 54 | 2019 |
| Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt H Luo, W Li, X He IEEE Transactions on Power Electronics 30 (5), 2395-2404, 2014 | 54 | 2014 |
| Recent advances and trend of HEV/EV‐oriented power semiconductors–an overview G Liu, K Li, Y Wang, H Luo, H Luo IET Power Electronics 13 (3), 394-404, 2020 | 48 | 2020 |
| A modified RC snubber with coupled inductor for active voltage balancing of series-connected SiC MOSFETs C Li, S Chen, H Luo, C Li, W Li, X He IEEE Transactions on Power Electronics 36 (10), 11208-11220, 2021 | 46 | 2021 |
| Modern IGBT gate driving methods for enhancing reliability of high-power converters—An overview H Luo, F Iannuzzo, PD Reigosa, F Blaabjerg, W Li, X He Microelectronics Reliability 58, 141-150, 2016 | 46 | 2016 |
