| Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations M Luisier, A Schenk, W Fichtner, G Klimeck Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006 | 513 | 2006 |
| Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation A Schenk Journal of Applied Physics 84 (7), 3684-3695, 1998 | 458 | 1998 |
| A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon A Schenk Solid-State Electronics 35 (11), 1585-1596, 1992 | 423 | 1992 |
| Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing PP Altermatt, A Schenk, F Geelhaar, G Heiser Journal of Applied Physics 93 (3), 1598-1604, 2003 | 313 | 2003 |
| A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation PP Altermatt, A Schenk, B Schmithüsen, G Heiser J. Appl. Phys. 100 (11), 113715, 2006 | 295* | 2006 |
| Modeling and simulation of tunneling through ultra-thin gate dielectrics A Schenk, G Heiser Journal of applied physics 81 (12), 7900-7908, 1997 | 284 | 1997 |
| Rigorous theory and simplified model of the band-to-band tunneling in silicon A Schenk Solid-State Electronics 36 (1), 19-34, 1993 | 277 | 1993 |
| Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ... Journal of Applied Physics 92 (6), 3187-3197, 2002 | 242 | 2002 |
| Quantum device-simulation with the density-gradient model on unstructured grids A Wettstein, A Schenk, W Fichtner IEEE Transactions on Electron Devices 48 (2), 279-284, 2001 | 233 | 2001 |
| High-speed III-V nanowire photodetector monolithically integrated on Si S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ... Nature communications 11 (1), 4565, 2020 | 201 | 2020 |
| Advanced physical models for silicon device simulation A Schenk Springer Science & Business Media, 1998 | 186 | 1998 |
| Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism M Luisier, A Schenk, W Fichtner Journal of Applied physics 100 (4), 2006 | 178 | 2006 |
| Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk Solid-State Electronics 53 (4), 438-444, 2009 | 168 | 2009 |
| Coupled defect‐level recombination: Theory and application to anomalous diode characteristics A Schenk, U Krumbein Journal of applied physics 78 (5), 3185-3192, 1995 | 159 | 1995 |
| Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling M Herrmann, A Schenk Journal of applied physics 77 (9), 4522-4540, 1995 | 153 | 1995 |
| Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes CD Bessire, MT Björk, H Schmid, A Schenk, KB Reuter, H Riel Nano letters 11 (10), 4195-4199, 2011 | 152 | 2011 |
| Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ... Journal of Applied Physics 110 (1), 2011 | 144 | 2011 |
| The origin of ideality factors n> 2 of shunts and surfaces in the dark IV curves of Si solar cells O Breitenstein, P Altermatt, K Ramspeck, A Schenk Proceedings of the 21st European photovoltaic solar energy conference, 625-628, 2006 | 112 | 2006 |
| Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ... Nano Letters 17 (7), 4373-4380, 2017 | 105 | 2017 |
| Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016 | 96 | 2016 |
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