| A comprehensive review of ZnO materials and devices Ü Özgür, YI Alivov, C Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, ... Journal of applied physics 98 (4), 2005 | 13764* | 2005 |
| Luminescence properties of defects in GaN MA Reshchikov, H Morkoç Journal of applied physics 97 (6), 2005 | 2249 | 2005 |
| Behavior of 2.8-and 3.2-eV photoluminescence bands in Mg-doped GaN at different temperatures and excitation densities MA Reshchikov, GC Yi, BW Wessels Physical Review B 59 (20), 13176, 1999 | 297 | 1999 |
| Yellow luminescence of gallium nitride generated by carbon defect complexes DO Demchenko, IC Diallo, MA Reshchikov Physical review letters 110 (8), 087404, 2013 | 258 | 2013 |
| Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films MA Reshchikov, RY Korotkov Physical Review B 64 (11), 115205, 2001 | 237 | 2001 |
| Dislocation density in GaN determined by photoelectrochemical and hot-wet etching P Visconti, KM Jones, MA Reshchikov, R Cingolani, H Morkoç, RJ Molnar Applied Physics Letters 77 (22), 3532-3534, 2000 | 217 | 2000 |
| Luminescence properties of defects in ZnO MA Reshchikov, H Morkoc, B Nemeth, J Nause, J Xie, B Hertog, ... Physica B: Condensed Matter 401, 358-361, 2007 | 215 | 2007 |
| Carbon defects as sources of the green and yellow luminescence bands in undoped GaN MA Reshchikov, DO Demchenko, A Usikov, H Helava, Y Makarov Physical Review B 90 (23), 235203, 2014 | 214 | 2014 |
| Energy band bowing parameter in AlxGa1− xN alloys F Yun, MA Reshchikov, L He, T King, H Morkoç, SW Novak, L Wei Journal of applied physics 92 (8), 4837-4839, 2002 | 209 | 2002 |
| Green luminescence in Mg-doped GaN MA Reshchikov, DO Demchenko, JD McNamara, S Fernández-Garrido, ... Physical Review B 90 (3), 035207, 2014 | 162 | 2014 |
| Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers MA Reshchikov, F Shahedipour, RY Korotkov, BW Wessels, MP Ulmer Journal of Applied Physics 87 (7), 3351-3354, 2000 | 144 | 2000 |
| Surface photovoltage in undoped n-type GaN MA Reshchikov, M Foussekis, AA Baski Journal of Applied Physics 107 (11), 2010 | 134 | 2010 |
| Measurement and analysis of photoluminescence in GaN MA Reshchikov Journal of applied physics 129 (12), 2021 | 133 | 2021 |
| Tunable and abrupt thermal quenching of photoluminescence in high-resistivity Zn-doped GaN MA Reshchikov, AA Kvasov, MF Bishop, T McMullen, A Usikov, ... Physical Review B—Condensed Matter and Materials Physics 84 (7), 075212, 2011 | 120 | 2011 |
| Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors MA Reshchikov Journal of Applied Physics 115 (1), 2014 | 118 | 2014 |
| Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy D Huang, P Visconti, KM Jones, MA Reshchikov, F Yun, AA Baski, T King, ... Applied Physics Letters 78 (26), 4145-4147, 2001 | 115 | 2001 |
| Two charge states of the acceptor in GaN: Evidence from photoluminescence MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ... Physical Review B 98 (12), 125207, 2018 | 111 | 2018 |
| Yellow and green luminescence in a freestanding GaN template MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 78 (20), 3041-3043, 2001 | 102 | 2001 |
| Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study MA Reshchikov, H Morkoç, SS Park, KY Lee Applied Physics Letters 81 (26), 4970-4972, 2002 | 101 | 2002 |
| GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces X Gu, MA Reshchikov, A Teke, D Johnstone, H Morkoc, B Nemeth, ... Applied physics letters 84 (13), 2268-2270, 2004 | 99 | 2004 |
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