| Dynamic RON Free 1.2-kV Vertical GaN JFET X Yang, R Zhang, B Wang, Q Song, A Walker, S Pidaparthi, C Drowley, ... IEEE Transactions on Electron Devices 71 (1), 720-726, 2023 | 18 | 2023 |
| Pulsed overcurrent capability of power semiconductor devices in solid-state circuit breakers: SiC MOSFET vs. Si IGBT X Yang, J Liu, B Wang, G Zhang 2022 IEEE Applied Power Electronics Conference and Exposition (APEC), 966-973, 2022 | 12 | 2022 |
| Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs X Yang, Q Song, R Zhang, B Wang, S Pidaparthi, A Walker, C Drowley, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 9 | 2024 |
| Switching figure-of-merit, optimal design, and power loss limit of (ultra-) wide bandgap power devices: A perspective M Porter, X Yang, H Gong, B Wang, Z Yang, Y Zhang Applied Physics Letters 125 (11), 2024 | 6 | 2024 |
| Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET X Yang, R Zhang, Q Yang, Q Song, E Litchford, A Walker, S Pidaparthi, ... IEEE Transactions on Power Electronics, 2024 | 4 | 2024 |
| Ultrafast Optically Controlled Power Switch: A General Design and Demonstration With 3.3 kV SiC MOSFET X Yang, G Shi, L Jin, Y Qin, M Porter, X Jia, D Dong, L Shao, Y Zhang IEEE Transactions on Electron Devices, 2024 | 1 | 2024 |
| Reliability of NiO/β-Ga2O3 bipolar heterojunction H Gong, X Yang, M Porter, Z Yang, B Wang, L Li, L Fu, K Sasaki, H Wang, ... Applied Physics Letters 126 (1), 2025 | | 2025 |
| First Characterization of Si, SiC and GaN Power Deivces at Deep Cryogenic Temperatures Down to 0.1 K X Yang, M Porter, Z Yang, Z Xi, Q Li, L Shao, Y Zhang 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Stability Improvement of GaN Power HEMT by a Multi-Functional Monolithic Protection Circuit Q Song, X Yang, B Wang, E Litchford, Y Sun, P Kong, Q Li, Y Zhang IEEE Transactions on Power Electronics, 2024 | | 2024 |
| Enhancing the Stability of GaN HEMT with a Multi-Functional Monolithic Gate Protection Circuit Q Song, X Yang, B Wang, E Litchford, Y Sun, P Kong, Q Li, Y Zhang 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 6738-6743, 2024 | | 2024 |
| Evaluation of Crosstalk-Induced Dynamic RON in GaN-on-Si Monolithic Half-Bridge Power IC X Yang, M Porter, Q Song, Y Zhang 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 6720-6724, 2024 | | 2024 |
| Application of 1.2 kV Vertical GaN JFET in MHz Buck Converter X Yang, Q Yang, R Zhang, Q Song, E Litchford, A Walker, S Pidaparthi, ... 2024 IEEE Energy Conversion Congress and Exposition (ECCE), 6744-6748, 2024 | | 2024 |
Yuhao ZhangUniversity of Hong Konghku.hk의 이메일 확인됨