| Opportunities in device scaling for 3-nm node and beyond: FinFET versus GAA-FET versus UFET UK Das, TK Bhattacharyya IEEE transactions on electron devices 67 (6), 2633-2638, 2020 | 112 | 2020 |
| Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications D Kumar, H Li, UK Das, AM Syed, N El‐Atab Advanced Materials 35 (28), 2300446, 2023 | 78 | 2023 |
| Limitations on lateral nanowire scaling beyond 7-nm node UK Das, MG Bardon, D Jang, G Eneman, P Schuddinck, D Yakimets, ... IEEE Electron Device Letters 38 (1), 9-11, 2016 | 37 | 2016 |
| Consideration of UFET architecture for the 5 nm node and beyond logic transistor UK Das, G Eneman, RSR Velampati, YS Chauhan, KB Jinesh, ... IEEE Journal of the Electron Devices Society 6, 1129-1135, 2018 | 18 | 2018 |
| Benchmarking silicon FinFET with the carbon nanotube and 2D-FETs for advanced node CMOS logic application UK Das, MM Hussain IEEE Transactions on Electron Devices 68 (7), 3643-3648, 2021 | 14 | 2021 |
| Parasitic capacitances on scaling lateral nanowire UK Das, TK Bhattacharyya Nanowires: Synthesis, Properties and Applications, 2019 | 5 | 2019 |
| Silicon-based Charge Trapping Memory Devices for Next-Generation Flexible Electronics Application UK Das, N Aslam, MM Hussain, N El-Atab IEEE Journal on Flexible Electronics, 2023 | 3 | 2023 |
| A Novel Wavy Channel Gate-All-Around FETs for Next-Generation CMOS Applications R Halder, UK Das, MHR Ansari, N El-Atab 2023 IEEE 23rd International Conference on Nanotechnology (NANO), 317-320, 2023 | 2 | 2023 |
| In-Depth DTCO Analysis on Scaling Gate-All-Around Nanosheets/Nanowires for 20 Å Node and Beyond Technologies UK Das, MHR Ansari, MM Hussain, N El-Atab IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Future Electronics beyond the FinFET and GAA-FETs UK Das | | 2023 |
| Flexible Solution‐Processable Black‐Phosphorus‐Based Optoelectronic Memristive Synapses for Neuromorphic Computing and Artificial Visual Perception Applications (Adv. Mater. 28 … D Kumar, H Li, UK Das, AM Syed, N El‐Atab Advanced Materials 35 (28), 2370201, 2023 | | 2023 |
| DESIGN OF A NOVEL TRANSISTOR ARCHITECTURE FOR THE MODERN SUB-14nm ULSI ERA UK DAS INDIAN INSTITUTE OF SPACE SCIENCE AND TECHNOLOGY, 2015 | | 2015 |
| Critical Dimension Control of Gate Layer Fabrication in MOSFET at 180nm Technological Node MUK Das, MSK Verma, MA Kumar | | 2014 |
Tarun Kanti BhattacharyyaProfessor of Electronics and Electrical Communication Engineering Indian Institute of Technologyece.iitkgp.ernet.in의 이메일 확인됨