| Temperature effects in NAND flash memories: A comparison between 2-D and 3-D arrays D Resnati, A Goda, G Nicosia, C Miccoli, AS Spinelli, CM Compagnoni IEEE Electron Device Letters 38 (4), 461-464, 2017 | 70 | 2017 |
| Characterization and modeling of temperature effects in 3-D NAND flash arrays—Part I: Polysilicon-induced variability D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3199-3206, 2018 | 66 | 2018 |
| Cycling-induced charge trapping/detrapping in Flash memories—Part I: Experimental evidence D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni IEEE Transactions on Electron Devices 63 (12), 4753-4760, 2016 | 36 | 2016 |
| Characterization and modeling of temperature effects in 3-D NAND Flash arrays—Part II: Random telegraph noise G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AS Spinelli, ... IEEE Transactions on Electron Devices 65 (8), 3207-3213, 2018 | 35 | 2018 |
| Temperature activation of the string current and its variability in 3-D NAND Flash arrays D Resnati, A Mannara, G Nicosia, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 4.7. 1-4.7. 4, 2017 | 24 | 2017 |
| Impact of cycling on random telegraph noise in 3-D NAND Flash arrays G Nicosia, A Goda, AS Spinelli, CM Compagnoni IEEE Electron Device Letters 39 (8), 1175-1178, 2018 | 21 | 2018 |
| Impact of temperature on the amplitude of RTN fluctuations in 3-D NAND Flash cells G Nicosia, A Mannara, D Resnati, GM Paolucci, P Tessariol, AL Lacaita, ... 2017 IEEE International Electron Devices Meeting (IEDM), 21.3. 1-21.3. 4, 2017 | 19 | 2017 |
| Cycling-induced charge trapping/detrapping in Flash memories—Part II: Modeling D Resnati, G Nicosia, GM Paolucci, A Visconti, CM Compagnoni IEEE Transactions on Electron Devices 63 (12), 4761-4768, 2016 | 15 | 2016 |
| A single-electron analysis of NAND Flash memory programming G Nicosia, GM Paolucci, CM Compagnoni, D Resnati, C Miccoli, ... 2015 IEEE International Electron Devices Meeting (IEDM), 14.8. 1-14.8. 4, 2015 | 12 | 2015 |
| Characterization and modeling of current transport in metal/ferroelectric/semiconductor tunnel junctions G Franchini, AS Spinelli, G Nicosia, I Fumagalli, M Asa, C Groppi, ... IEEE Transactions on Electron Devices 67 (9), 3729-3735, 2020 | 10 | 2020 |
| Investigation of the temperature dependence of random telegraph noise fluctuations in nanoscale polysilicon-channel 3-D Flash cells G Nicosia, A Goda, AS Spinelli, CM Compagnoni Solid-State Electronics 151, 18-22, 2019 | 10 | 2019 |
| Distributed cycling in charge trap-based 3D NAND arrays: Model and qualification tests implications G Nicosia, N Righetti, Y Dong 2023 IEEE International Memory Workshop (IMW), 1-4, 2023 | 9 | 2023 |
| Investigation of the program operation of NAND flash cells with a single-electron resolution G Nicosia, CM Compagnoni, GM Paolucci, D Resnati, C Miccoli, ... IEEE Transactions on Electron Devices 63 (6), 2360-2366, 2016 | 2 | 2016 |
| Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND Arrays L Chiavarone, G Nicosia, N Righetti, Y Dong 2024 IEEE International Reliability Physics Symposium (IRPS), 1-5, 2024 | 1 | 2024 |
| Performance and reliability issues of NAND Flash cells at the transition from planar to 3-D array architectures G Nicosia Politecnico di Milano, 2019 | 1 | 2019 |
| Magnetic field measurement system based on rotating PCB coils G Nicosia, J DiMarco | 1 | 2014 |
| Self-optimizing corrective read offsets with lateral charge migration proxies G Nicosia, A Goda, N Righetti US Patent App. 18/407,366, 2024 | | 2024 |
| Analisi a singolo elettrone della programmazione di array di memorie flash NAND di nanoscala G NICOSIA Politecnico di Milano, 2014 | | 2014 |
Davide ResnatiMicron Technology, Inc.micron.com의 이메일 확인됨