| The breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor (RCAT) for 88 nm feature size and beyond JY Kim, CS Lee, SE Kim, IB Chung, YM Choi, BJ Park, JW Lee, DI Kim, ... 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003 | 358 | 2003 |
| S-RCAT (sphere-shaped-recess-channel-array transistor) technology for 70nm DRAM feature size and beyond JV Kim, HJ Oh, DS Woo, YS Lee, DH Kim, SE Kim, GW Ha, HJ Kim, ... Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 34-35, 2005 | 347 | 2005 |
| A band-gap-graded CZTSSe solar cell with 12.3% efficiency KJ Yang, DH Son, SJ Sung, JH Sim, YI Kim, SN Park, DH Jeon, JS Kim, ... Journal of Materials Chemistry A 4 (26), 10151-10158, 2016 | 327 | 2016 |
| Hysteresis-less mesoscopic CH3NH3PbI3 perovskite hybrid solar cells by introduction of Li-treated TiO2 electrode JH Heo, MS You, MH Chang, W Yin, TK Ahn, SJ Lee, SJ Sung, DH Kim, ... Nano Energy 15, 530-539, 2015 | 288 | 2015 |
| Effect of solid-H 2 S gas reactions on CZTSSe thin film growth and photovoltaic properties of a 12.62% efficiency device DH Son, SH Kim, SY Kim, YI Kim, JH Sim, SN Park, DH Jeon, DK Hwang, ... Journal of Materials Chemistry A 7 (44), 25279-25289, 2019 | 284 | 2019 |
| High performance PRAM cell scalable to sub-20nm technology with below 4F2 cell size, extendable to DRAM applications IS Kim, SL Cho, DH Im, EH Cho, DH Kim, GH Oh, DH Ahn, SO Park, ... 2010 Symposium on VLSI Technology, 203-204, 2010 | 264 | 2010 |
| High-density low-power-operating DRAM device adopting 6F/sup 2/cell scheme with novel S-RCAT structure on 80nm feature size and beyond HJ Oh, JY Kim, JH Kim, SG Park, DH Kim, SE Kim, DS Woo, YS Lee, ... Proceedings of 35th European Solid-State Device Research Conference, 2005 …, 2005 | 257 | 2005 |
| The excellent scalability of the RCAT (recess-channel-array-transistor) technology for sub-70nm DRAM feature size and beyond JY Kim, DS Woo, HJ Oh, HJ Kim, SE Kim, BJ Park, JM Kwon, MS Shim, ... IEEE VLSI-TSA International Symposium on VLSI Technology, 2005.(VLSI-TSA …, 2005 | 256 | 2005 |
| Highly reproducible planar Sb 2 S 3-sensitized solar cells based on atomic layer deposition DH Kim, SJ Lee, MS Park, JK Kang, JH Heo, SH Im, SJ Sung Nanoscale 6 (23), 14549-14554, 2014 | 230 | 2014 |
| Flexible Cu2ZnSn(S,Se)4 solar cells with over 10% efficiency and methods of enlarging the cell area KJ Yang, S Kim, SY Kim, K Ahn, DH Son, SH Kim, SJ Lee, YI Kim, ... Nature communications 10 (1), 2959, 2019 | 137 | 2019 |
| Effects of Na and MoS2 on Cu2ZnSnS4 thin‐film solar cell KJ Yang, JH Sim, B Jeon, DH Son, DH Kim, SJ Sung, DK Hwang, S Song, ... Progress in Photovoltaics: Research and Applications 23 (7), 862-873, 2015 | 137 | 2015 |
| Alkali acetate-assisted enhanced electronic coupling in CsPbI3 perovskite quantum dot solids for improved photovoltaics J Kim, B Koo, WH Kim, J Choi, C Choi, SJ Lim, JS Lee, DH Kim, MJ Ko, ... Nano Energy 66, 104130, 2019 | 119 | 2019 |
| Improve the performance of CZTSSe solar cells by applying a SnS BSF layer MK Omrani, M Minbashi, N Memarian, DH Kim Solid-State Electronics 141, 50-57, 2018 | 111 | 2018 |
| 8.01% CuInGaSe 2 solar cells fabricated by air-stable low-cost inks W Wang, SY Han, SJ Sung, DH Kim, CH Chang Physical Chemistry Chemical Physics 14 (31), 11154-11159, 2012 | 88 | 2012 |
| A modeling study on utilizing SnS2 as the buffer layer of CZT (S, Se) solar cells M Haghighi, M Minbashi, N Taghavinia, DH Kim, SM Mahdavi, ... Solar Energy 167, 165-171, 2018 | 86 | 2018 |
| Comparison of theoretical and experimental results for band-gap-graded CZTSSe solar cell M Minbashi, MK Omrani, N Memarian, DH Kim Current Applied Physics 17 (10), 1238-1243, 2017 | 86 | 2017 |
| Highly manufacturable 7nm FinFET technology featuring EUV lithography for low power and high performance applications D Ha, C Yang, J Lee, S Lee, SH Lee, KI Seo, HS Oh, EC Hwang, SW Do, ... 2017 Symposium on VLSI Technology, T68-T69, 2017 | 84 | 2017 |
| Surface potential on grain boundaries and intragrains of highly efficient Cu2ZnSn (S, Se) 4 thin-films grown by two-step sputtering process GY Kim, AR Jeong, JR Kim, W Jo, DH Son, DH Kim, JK Kang Solar energy materials and solar cells 127, 129-135, 2014 | 81 | 2014 |
| Ultrathin ZrO2 on LiNi0. 5Mn0. 3Co0. 2O2 electrode surface via atomic layer deposition for high-voltage operation in lithium-ion batteries J Ahn, EK Jang, S Yoon, SJ Lee, SJ Sung, DH Kim, KY Cho Applied Surface Science 484, 701-709, 2019 | 80 | 2019 |
| Surface versus bulk characterizations of electronic inhomogeneity in a thin film YJ Chang, JS Yang, YS Kim, DH Kim, TW Noh, DW Kim, E Oh, B Kahng, ... Physical Review B—Condensed Matter and Materials Physics 76 (7), 075118, 2007 | 77 | 2007 |
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