Laser-induced shape transformation of gold nanoparticles below the melting point: the effect of surface melting S Inasawa, M Sugiyama, Y Yamaguchi The Journal of Physical Chemistry B 109 (8), 3104-3111, 2005 | 264 | 2005 |
Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes NP Hylton, XF Li, V Giannini, KH Lee, NJ Ekins-Daukes, J Loo, ... Scientific reports 3 (1), 2874, 2013 | 156 | 2013 |
Bimodal size distribution of gold nanoparticles under picosecond laser pulses S Inasawa, M Sugiyama, Y Yamaguchi The Journal of Physical Chemistry B 109 (19), 9404-9410, 2005 | 138 | 2005 |
100‐period, 1.23‐eV bandgap InGaAs/GaAsP quantum wells for high‐efficiency GaAs solar cells: toward current‐matched Ge‐based tandem cells H Fujii, K Toprasertpong, Y Wang, K Watanabe, M Sugiyama, Y Nakano Progress in Photovoltaics: Research and Applications 22 (7), 784-795, 2014 | 112 | 2014 |
Characteristics of hydrogen generation from water splitting by polymer electrolyte electrochemical cell directly connected with concentrated photovoltaic cell K Fujii, S Nakamura, M Sugiyama, K Watanabe, B Bagheri, Y Nakano International journal of hydrogen energy 38 (34), 14424-14432, 2013 | 110 | 2013 |
Hot carriers in quantum wells for photovoltaic efficiency enhancement LC Hirst, H Fujii, Y Wang, M Sugiyama, NJ Ekins-Daukes IEEE Journal of Photovoltaics 4 (1), 244-252, 2013 | 101 | 2013 |
Mass accommodation coefficient of water: Molecular dynamics simulation and revised analysis of droplet train/flow reactor experiment A Morita, M Sugiyama, H Kameda, S Koda, DR Hanson The Journal of Physical Chemistry B 108 (26), 9111-9120, 2004 | 93 | 2004 |
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier … M Yokoyama, T Yasuda, H Takagi, N Miyata, Y Urabe, H Ishii, H Yamada, ... Applied Physics Letters 96 (14), 2010 | 84 | 2010 |
Spectroscopic study of laser-induced phase transition of gold nanoparticles on nanosecond time scales and longer S Inasawa, M Sugiyama, S Noda, Y Yamaguchi The Journal of Physical Chemistry B 110 (7), 3114-3119, 2006 | 83 | 2006 |
Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over‐50%‐efficient lattice‐matched quad‐junction solar cells K Toprasertpong, H Fujii, T Thomas, M Führer, D Alonso‐Álvarez, ... Progress in Photovoltaics: research and applications 24 (4), 533-542, 2016 | 82 | 2016 |
Size and shape transformation of TiO2 nanoparticles by irradiation of 308-nm laser beam M Sugiyama, H Okazaki, S Koda Japanese journal of applied physics 41 (7R), 4666, 2002 | 77 | 2002 |
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin Buried Oxide Layers M Yokoyama, R Iida, S Kim, N Taoka, Y Urabe, H Takagi, T Yasuda, ... IEEE electron device letters 32 (9), 1218-1220, 2011 | 75 | 2011 |
Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth H Oh, M Sugiyama, Y Shimogaki Japanese journal of applied physics 42 (10R), 6284, 2003 | 73 | 2003 |
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding M Yokoyama, R Iida, SH Kim, N Taoka, Y Urabe, T Yasuda, H Takagi, ... 2010 International Electron Devices Meeting, 3.1. 1-3.1. 4, 2010 | 63 | 2010 |
Conformal deposition and gap-filling of copper into ultranarrow patterns by supercritical fluid deposition T Momose, M Sugiyama, E Kondoh, Y Shimogaki Applied physics express 1 (9), 097002, 2008 | 59 | 2008 |
InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer M Takenaka, M Yokoyama, M Sugiyama, Y Nakano, S Takagi Applied Physics Express 2 (12), 122201, 2009 | 56 | 2009 |
Optical recording media using laser-induced size reduction of Au nanoparticles M Sugiyama, S Inasawa, S Koda, T Hirose, T Yonekawa, T Omatsu, ... Applied Physics Letters 79 (10), 1528-1530, 2001 | 55 | 2001 |
CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding M Yokoyama, SH Kim, R Zhang, N Taoka, Y Urabe, T Maeda, H Takagi, ... 2011 Symposium on VLSI Technology-Digest of Technical Papers, 60-61, 2011 | 54 | 2011 |
InP–InGaAsP Integrated 15 Optical Switch Using Arrayed Phase Shifters T Tanemura, M Takenaka, A Al Amin, K Takeda, T Shioda, M Sugiyama, ... IEEE Photonics Technology Letters 20 (12), 1063-1065, 2008 | 54 | 2008 |
Size controlled formation of gold nanoparticles using photochemical grwoth and photothermal size reduction by 308 nm laser pulses S Inasawa, M Sugiyama, S Koda Japanese journal of applied physics 42 (10R), 6705, 2003 | 54 | 2003 |