| Stacked nanosheet gate-all-around transistor to enable scaling beyond FinFET N Loubet, T Hook, P Montanini, CW Yeung, S Kanakasabapathy, ... 2017 symposium on VLSI technology, T230-T231, 2017 | 976 | 2017 |
| Collapse of long-range charge order tracked by time-resolved photoemission at high momenta T Rohwer, S Hellmann, M Wiesenmayer, C Sohrt, A Stange, B Slomski, ... Nature 471 (7339), 490-493, 2011 | 576 | 2011 |
| Time-domain classification of charge-density-wave insulators S Hellmann, T Rohwer, M Kalläne, K Hanff, C Sohrt, A Stange, A Carr, ... Nature communications 3 (1), 1069, 2012 | 396 | 2012 |
| Tomographic reconstruction of circularly polarized high-harmonic fields: 3D attosecond metrology C Chen, Z Tao, C Hernández-García, P Matyba, A Carr, R Knut, O Kfir, ... Science Advances 2 (2), e1501333, 2016 | 145 | 2016 |
| Time-and angle-resolved photoemission spectroscopy with optimized high-harmonic pulses using frequency-doubled Ti: Sapphire lasers S Eich, A Stange, AV Carr, J Urbancic, T Popmintchev, M Wiesenmayer, ... Journal of Electron Spectroscopy and Related Phenomena 195, 231-236, 2014 | 143 | 2014 |
| Distinguishing attosecond electron–electron scattering and screening in transition metals C Chen, Z Tao, A Carr, P Matyba, T Szilvási, S Emmerich, M Piecuch, ... Proceedings of the National Academy of Sciences 114 (27), E5300-E5307, 2017 | 96 | 2017 |
| Self-amplified photo-induced gap quenching in a correlated electron material S Mathias, S Eich, J Urbancic, S Michael, AV Carr, S Emmerich, A Stange, ... Nature communications 7 (1), 12902, 2016 | 81 | 2016 |
| Tungsten and cobalt metallization: A material study for MOL local interconnects V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 66 | 2016 |
| Laser damage growth in fused silica with simultaneous 351nm and 1053nm irradiation MA Norton, AV Carr, CW Carr, EE Donohue, MD Feit, WG Hollingsworth, ... Laser-Induced Damage in Optical Materials: 2008 7132, 454-461, 2008 | 54 | 2008 |
| Parasitic resistance reduction strategies for advanced CMOS FinFETs beyond 7nm H Wu, O Gluschenkov, G Tsutsui, C Niu, K Brew, C Durfee, C Prindle, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.4. 1-35.4. 4, 2018 | 47 | 2018 |
| Contacts in advanced CMOS: History and emerging challenges C Lavoie, P Adusumilli, AV Carr, JSJ Sweet, AS Ozcan, E Levrau, N Breil, ... ECS Transactions 77 (5), 59, 2017 | 44 | 2017 |
| Defect and grain boundary scattering in tungsten: A combined theoretical and experimental study NA Lanzillo, H Dixit, E Milosevic, C Niu, AV Carr, P Oldiges, MV Raymond, ... Journal of Applied Physics 123 (15), 2018 | 36 | 2018 |
| Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures N Breil, A Carr, T Kuratomi, C Lavoie, IC Chen, M Stolfi, KD Chiu, W Wang, ... 2017 Symposium on VLSI Technology, T216-T217, 2017 | 27 | 2017 |
| Formation of wrap-around-contact to reduce contact resistivity A Carr, J Zhang, CH Lee, T Ando, P Hashemi US Patent 10,586,872, 2020 | 19 | 2020 |
| External resistance reduction by nanosecond laser anneal in Si/SiGe CMOS technology O Gluschenkov, H Wu, K Brew, C Niu, L Yu, Y Sulehria, S Choi, C Durfee, ... 2018 IEEE International Electron Devices Meeting (IEDM), 35.3. 1-35.3. 4, 2018 | 16 | 2018 |
| Controlling the electronic structure of graphene using surface-adsorbate interactions P Matyba, A Carr, C Chen, DL Miller, G Peng, S Mathias, M Mavrikakis, ... Physical Review B 92 (4), 041407, 2015 | 16 | 2015 |
| Contact resistance reduction in nanosheet device structure H Wu, D Guo, R Bao, J Wang, L Yu, R Vega, A Carr US Patent 11,289,573, 2022 | 14 | 2022 |
| First-principles investigations of TiGe/Ge interface and recipes to reduce the contact resistance H Dixit, C Niu, M Raymond, V Kamineni, RK Pandey, A Konar, ... IEEE Transactions on Electron Devices 64 (9), 3775-3780, 2017 | 14 | 2017 |
| IEEE International Interconnect Technology Conference/Advanced Metallization Conference (IITC, AMC) V Kamineni, M Raymond, S Siddiqui, F Mont, S Tsai, C Niu, A Labonte, ... IEEE International Interconnect Technology Conference IITC, p. 105, 2016 | 14 | 2016 |
| Origin of Topological Hall‐Like Feature in Epitaxial SrRuO3 Thin Films P Roy, A Carr, T Zhou, B Paudel, X Wang, D Chen, KT Kang, A Pateras, ... Advanced Electronic Materials 9 (6), 2300020, 2023 | 12 | 2023 |
