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Ikuo SUEMUNE
Ikuo SUEMUNE
Hokkaido University, Research Institute for Electronic Science
es.hokudai.ac.jp의 이메일 확인됨 - 홈페이지
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Growth and characterization of hypothetical zinc-blende ZnO films on GaAs (001) substrates with ZnS buffer layers
ABMA Ashrafi, A Ueta, A Avramescu, H Kumano, I Suemune, YW Ok, ...
Applied Physics Letters 76 (5), 550-552, 2000
3162000
Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements
K Uesugi, N Morooka, I Suemune
Applied Physics Letters 74 (9), 1254-1256, 1999
3151999
Comment on polarization dependent momentum matrix elements in quantum well lasers
M Yamanishi, I Suemune
Japanese Journal of Applied Physics 23 (1A), L35, 1984
2831984
Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
I Suemune, LA Coldren, M Yamanishi, Y Kan
Applied physics letters 53 (15), 1378-1380, 1988
2701988
Symmetric quantum dots as efficient sources of highly entangled photons: Violation of Bell's inequality without spectral and temporal filtering
T Kuroda, T Mano, N Ha, H Nakajima, H Kumano, B Urbaszek, M Jo, ...
Physical Review B—Condensed Matter and Materials Physics 88 (4), 041306, 2013
1912013
Nitrogen-doped p-type ZnO layers prepared with H2O vapor-assisted metalorganic molecular-beam epitaxy
ABMA Ashrafi, I Suemune, H Kumano, S Tanaka
Japanese journal of applied physics 41 (11B), L1281, 2002
1662002
Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs
I Suemune, K Uesugi, W Walukiewicz
Applied Physics Letters 77 (19), 3021-3023, 2000
1652000
Luminescent porous silicon synthesized by visible light irradiation
N Noguchi, I Suemune
Applied physics letters 62 (12), 1429-1431, 1993
1631993
Corrections to the expression for gain in GaAs
RH Yan, SW Corzine, LA Coldren, I Suemune
IEEE journal of quantum electronics 26 (2), 213-216, 1990
1501990
Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells
I Suemune, LA Coldren
IEEE journal of quantum electronics 24 (8), 1778-1790, 1988
1491988
Self-ordering of nanofacets on vicinal SiC surfaces
H Nakagawa, S Tanaka, I Suemune
Physical review letters 91 (22), 226107, 2003
1432003
Temperature dependence of band gap energies of GaAsN alloys
K Uesugi, I Suemune, T Hasegawa, T Akutagawa, T Nakamura
Applied Physics Letters 76 (10), 1285-1287, 2000
1432000
Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applications
Y Kan, H Nagai, M Yamanishi, I Suemune
IEEE journal of quantum electronics 23 (12), 2167-2180, 1987
1271987
Quantum mechanical size effect modulation light sources–a new field effect semiconductor laser or light emitting device
M Yamanishi, I Suemune
Japanese journal of applied physics 22 (1A), L22, 1983
1001983
Theoretical study of differential gain in strained quantum well structures
I Suemune
IEEE journal of quantum electronics 27 (5), 1149-1159, 1991
961991
Controllable enhancement of excitonic spontaneous emission by quantum confined Stark effect in GaAs quantum wells embedded in quantum microcavities
N Ochi, T Shiotani, M Yamanishi, Y Honda, I Suemune
Applied physics letters 58 (24), 2735-2737, 1991
791991
Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer
H Ishikawa, I Suemune
IEEE photonics technology letters 6 (3), 344-347, 1994
761994
Bandgap energy of GaNAs alloys grown on (001) GaAs by metalorganic molecular beam epitaxy
KUK Uesugi, ISI Suemune
Japanese journal of applied physics 36 (12A), L1572, 1997
721997
Study of luminescent region in anodized porous silicons by photoluminescence imaging and their microstructures
N Noguchi, I Suemune, M Yamanishi, GC Hua, N Otsuka
Japanese journal of applied physics 31 (4B), L490, 1992
701992
Position controlled nanowires for infrared single photon emission
SN Dorenbos, H Sasakura, MP Van Kouwen, N Akopian, S Adachi, ...
Applied Physics Letters 97 (17), 2010
692010
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