| Highly responsive ultrathin GaS nanosheet photodetectors on rigid and flexible substrates PA Hu, L Wang, M Yoon, J Zhang, W Feng, X Wang, Z Wen, JC Idrobo, ... Nano letters 13 (4), 1649-1654, 2013 | 838 | 2013 |
| Back gated multilayer InSe transistors with enhanced carrier mobilities via the suppression of carrier scattering from a dielectric interface W Feng, W Zheng, W Cao, PA Hu Advanced materials 26 (38), 6587-6593, 2014 | 510 | 2014 |
| Intrinsic two-dimensional ferroelectricity with dipole locking J Xiao, H Zhu, Y Wang, W Feng, Y Hu, A Dasgupta, Y Han, Y Wang, ... Physical review letters 120 (22), 227601, 2018 | 461 | 2018 |
| A dual-band multilayer InSe self-powered photodetector with high performance induced by surface plasmon resonance and asymmetric Schottky junction M Dai, H Chen, R Feng, W Feng, Y Hu, H Yang, G Liu, X Chen, J Zhang, ... ACS nano 12 (8), 8739-8747, 2018 | 255 | 2018 |
| Ultrahigh photo-responsivity and detectivity in multilayer InSe nanosheets phototransistors with broadband response W Feng, JB Wu, X Li, W Zheng, X Zhou, K Xiao, W Cao, B Yang, JC Idrobo, ... Journal of Materials Chemistry C 3 (27), 7022-7028, 2015 | 243 | 2015 |
| Synthesis of two-dimensional β-Ga 2 O 3 nanosheets for high-performance solar blind photodetectors W Feng, X Wang, J Zhang, L Wang, W Zheng, PA Hu, W Cao, B Yang Journal of Materials Chemistry C 2 (17), 3254-3259, 2014 | 207 | 2014 |
| Vertical 2D MoO2/MoSe2 Core–Shell Nanosheet Arrays as High‐Performance Electrocatalysts for Hydrogen Evolution Reaction X Chen, G Liu, W Zheng, W Feng, W Cao, W Hu, PA Hu Advanced Functional Materials 26 (46), 8537-8544, 2016 | 192 | 2016 |
| Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap P Hu, J Zhang, M Yoon, XF Qiao, X Zhang, W Feng, P Tan, W Zheng, J Liu, ... Nano Research 7, 694-703, 2014 | 183 | 2014 |
| Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3 W Feng, W Zheng, F Gao, XS Chen, G Liu, T Hasan, WW Cao, PA Hu Chemistry of Materials 28 (12), 4278-4283, 2016 | 174 | 2016 |
| Anisotropic Growth of Nonlayered CdS on MoS2 Monolayer for Functional Vertical Heterostructures W Zheng, W Feng, X Zhang, X Chen, G Liu, Y Qiu, T Hasan, P Tan, PA Hu Advanced Functional Materials 26 (16), 2648-2654, 2016 | 142 | 2016 |
| Colorimetric sensor based on self‐assembled Polydiacetylene/graphene‐stacked composite film for vapor‐phase volatile organic compounds X Wang, X Sun, PA Hu, J Zhang, L Wang, W Feng, S Lei, B Yang, W Cao Advanced Functional Materials 23 (48), 6044-6050, 2013 | 137 | 2013 |
| Performance improvement of multilayer InSe transistors with optimized metal contacts W Feng, X Zhou, WQ Tian, W Zheng, PA Hu Physical Chemistry Chemical Physics 17 (5), 3653-3658, 2015 | 136 | 2015 |
| Vertically aligned two-dimensional SnS 2 nanosheets with a strong photon capturing capability for efficient photoelectrochemical water splitting G Liu, Z Li, T Hasan, X Chen, W Zheng, W Feng, D Jia, Y Zhou, PA Hu Journal of Materials Chemistry A 5 (5), 1989-1995, 2017 | 135 | 2017 |
| High-Performance Broadband Photoelectrochemical Photodetectors Based on Ultrathin Bi2O2S Nanosheets X Yang, L Qu, F Gao, Y Hu, H Yu, Y Wang, M Cui, Y Zhang, Z Fu, Y Huang, ... ACS Applied Materials & Interfaces 14 (5), 7175-7183, 2022 | 116 | 2022 |
| In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2–MoSe2 Lateral Heterostructures and Photodetector Application X Chen, Y Qiu, H Yang, G Liu, W Zheng, W Feng, W Cao, W Hu, PA Hu ACS applied materials & interfaces 9 (2), 1684-1691, 2017 | 112 | 2017 |
| Low-temperature growth of large-area heteroatom-doped graphene film J Zhang, J Li, Z Wang, X Wang, W Feng, W Zheng, W Cao, PA Hu Chemistry of Materials 26 (7), 2460-2466, 2014 | 106 | 2014 |
| Ultralow Power Optical Synapses Based on MoS2 Layers by Indium‐Induced Surface Charge Doping for Biomimetic Eyes Y Hu, M Dai, W Feng, X Zhang, F Gao, S Zhang, B Tan, J Zhang, Y Shuai, ... Advanced Materials 33 (52), 2104960, 2021 | 98 | 2021 |
| A fast and zero-biased photodetector based on GaTe–InSe vertical 2D p–n heterojunction W Feng, Z Jin, J Yuan, J Zhang, S Jia, L Dong, J Yoon, L Zhou, R Vajtai, ... 2D Materials 5 (2), 025008, 2018 | 97 | 2018 |
| Controlled growth of vertical 3D MoS 2 (1− x) Se 2x nanosheets for an efficient and stable hydrogen evolution reaction X Chen, Z Wang, Y Qiu, J Zhang, G Liu, W Zheng, W Feng, W Cao, PA Hu, ... Journal of Materials Chemistry A 4 (46), 18060-18066, 2016 | 83 | 2016 |
| Boosting photoresponse of self-powered InSe-based photoelectrochemical photodetectors via suppression of interface doping X Yang, X Liu, L Qu, F Gao, Y Xu, M Cui, H Yu, Y Wang, PA Hu, W Feng ACS nano 16 (5), 8440-8448, 2022 | 78 | 2022 |
Wenwu CaoThe Pennsylvania State Universitypsu.edu의 이메일 확인됨
