| Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries M Farahmand, C Garetto, E Bellotti, KF Brennan, M Goano, E Ghillino, ... IEEE Transactions on electron devices 48 (3), 535-542, 2001 | 613 | 2001 |
| Coplanar waveguides for MMIC applications: Effect of upper shielding, conductor backing, finite-extent ground planes, and line-to-line coupling G Ghione, CU Naldi IEEE transactions on Microwave Theory and Techniques 35 (3), 260-267, 1987 | 499 | 1987 |
| Semiconductor devices for high-speed optoelectronics G Ghione Cambridge University Press, 2009 | 282 | 2009 |
| Analytical formulas for coplanar lines in hybrid and monolithic MICs G Ghione, C Naldi Electronics letters 20 (4), 179-181, 1984 | 280 | 1984 |
| Noise in semiconductor devices F Bonani, G Ghione, F Bonani, G Ghione Noise in Semiconductor Devices: Modeling and Simulation, 1-38, 2001 | 214 | 2001 |
| 3–3.6-GHz wideband GaN Doherty power amplifier exploiting output compensation stages JM Rubio, J Fang, V Camarchia, R Quaglia, M Pirola, G Ghione IEEE Transactions on Microwave Theory and Techniques 60 (8), 2543-2548, 2012 | 186 | 2012 |
| Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN M Goano, E Bellotti, E Ghillino, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6467-6475, 2000 | 182 | 2000 |
| Parameters of coplanar waveguides with lower ground plane G Ghione, C Naldi Electronics Letters 19 (18), 734-735, 1983 | 179 | 1983 |
| A CAD-oriented analytical model for the losses of general asymmetric coplanar lines in hybrid and monolithic MICs G Ghione IEEE Transactions on Microwave Theory and Techniques 41 (9), 1499-1510, 1993 | 176 | 1993 |
| An efficient approach to noise analysis through multidimensional physics-based models F Bonani, G Ghione, MR Pinto, RK Smith IEEE Transactions on Electron Devices 45 (1), 261-269, 1998 | 174 | 1998 |
| Physics‐based modeling and experimental implications of trap‐assisted tunneling in InGaN/GaN light‐emitting diodes M Mandurrino, G Verzellesi, M Goano, M Vallone, F Bertazzi, G Ghione, ... physica status solidi (a) 212 (5), 947-953, 2015 | 129 | 2015 |
| Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys and M Goano, E Bellotti, E Ghillino, C Garetto, G Ghione, KF Brennan Journal of Applied Physics 88 (11), 6476-6482, 2000 | 126 | 2000 |
| On the application of the Kirchhoff transformation to the steady-state thermal analysis of semiconductor devices with temperature-dependent and piecewise inhomogeneous thermal … F Bonani, G Ghione Solid-State Electronics 38 (7), 1409-1412, 1995 | 114 | 1995 |
| A TCAD approach to the physics-based modeling of frequency conversion and noise in semiconductor devices under large-signal forced operation F Bonani, SD Guerrieri, G Ghione, M Pirola IEEE Transactions on Electron Devices 48 (5), 966-977, 2001 | 85 | 2001 |
| Generation–recombination noise modelling in semiconductor devices through population or approximate equivalent current density fluctuations F Bonani, G Ghione Solid-State Electronics 43 (2), 285-295, 1999 | 85 | 1999 |
| Physics-based electron device modelling and computer-aided MMIC design F Filicori, G Ghione, CU Naldi IEEE Transactions on Microwave Theory and Techniques 40 (7), 1333-1352, 1992 | 78 | 1992 |
| Microwave modeling and characterization of thick coplanar waveguides on oxide-coated lithium niobate substrates for electrooptical applications G Ghione, M Goano, GL Madonna, G Omegna, M Pirola, S Bosso, ... IEEE Transactions on microwave theory and techniques 47 (12), 2287-2293, 1999 | 77 | 1999 |
| A computationally efficient unified approach to the numerical analysis of the sensitivity and noise of semiconductor devices G Ghione, F Filicori IEEE transactions on computer-aided design of integrated circuits and …, 1993 | 68 | 1993 |
| Ag nanoparticle-based inkjet printed planar transmission lines for RF and microwave applications: considerations on ink composition, nanoparticle size distribution and … A Chiolerio, M Cotto, P Pandolfi, P Martino, V Camarchia, M Pirola, ... Microelectronic Engineering 97, 8-15, 2012 | 67 | 2012 |
| Auger recombination in InGaN/GaN quantum wells: A full-Brillouin-zone study F Bertazzi, X Zhou, M Goano, G Ghione, E Bellotti Applied Physics Letters 103 (8), 2013 | 65 | 2013 |
Fabrizio BonaniProfessor of Electronics, Politecnico di Torino, Dipartimento di Elettronica epolito.it의 이메일 확인됨