| Improved performance of 1.3 μm multilayer InAs quantum-dot lasers using a high-growth-temperature GaAs spacer layer HY Liu, IR Sellers, TJ Badcock, DJ Mowbray, MS Skolnick, KM Groom, ... Applied Physics Letters 85 (5), 704-706, 2004 | 343 | 2004 |
| Design and performance of an InGaAs-InP single-photon avalanche diode detector S Pellegrini, RE Warburton, LJJ Tan, JS Ng, AB Krysa, K Groom, ... IEEE journal of quantum electronics 42 (4), 397-403, 2006 | 187 | 2006 |
| Room-temperature 1.6 μm light emission from InAs∕ GaAs quantum dots with a thin GaAsSb cap layer HY Liu, MJ Steer, TJ Badcock, DJ Mowbray, MS Skolnick, F Suarez, ... Journal of applied physics 99 (4), 2006 | 130 | 2006 |
| Impact ionization coefficients in 4H-SiC WS Loh, BK Ng, JS Ng, SI Soloviev, HY Cha, PM Sandvik, CM Johnson, ... IEEE Transactions on electron devices 55 (8), 1984-1990, 2008 | 112 | 2008 |
| Localization effects and band gap of GaAsBi alloys AR Mohmad, F Bastiman, CJ Hunter, RD Richards, SJ Sweeney, JS Ng, ... physica status solidi (b) 251 (6), 1276-1281, 2014 | 107 | 2014 |
| Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson IEEE journal of quantum electronics 43 (5-6), 503-507, 2007 | 104 | 2007 |
| Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010 | 102 | 2010 |
| The effect of Bi composition to the optical quality of GaAs1− xBix AR Mohmad, F Bastiman, CJ Hunter, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 99 (4), 2011 | 91 | 2011 |
| Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ... IEEE Transactions on Electron Devices 54 (1), 11-16, 2006 | 86 | 2006 |
| Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008 | 84 | 2008 |
| Effects of rapid thermal annealing on GaAs1-xBix alloys AR Mohmad, F Bastiman, CJ Hunter, R Richards, SJ Sweeney, JS Ng, ... Applied Physics Letters 101 (1), 2012 | 82 | 2012 |
| Single-photon detection for long-range imaging and sensing RH Hadfield, J Leach, F Fleming, DJ Paul, CH Tan, JS Ng, RK Henderson, ... Optica 10 (9), 1124-1141, 2023 | 78 | 2023 |
| Absorption Characteristics ofDiodes in the Near-Infrared CJ Hunter, F Bastiman, AR Mohmad, R Richards, JS Ng, SJ Sweeney, ... IEEE Photonics Technology Letters 24 (23), 2191-2194, 2012 | 75 | 2012 |
| Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growth F Bastiman, ARB Mohmad, JS Ng, JPR David, SJ Sweeney Journal of crystal growth 338 (1), 57-61, 2012 | 68 | 2012 |
| Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees IEEE Transactions on Electron Devices 50 (4), 901-905, 2003 | 65 | 2003 |
| Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ... IEEE Transactions on Electron Devices 49 (4), 544-549, 2002 | 59 | 2002 |
| Improving optical properties of 1.55 μm GaInNAs/GaAs multiple quantum wells with Ga (In) NAs barrier and space layer HY Liu, M Hopkinson, P Navaretti, M Gutierrez, JS Ng, JPR David Applied physics letters 83 (24), 4951-4953, 2003 | 53 | 2003 |
| InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan Optics express 24 (21), 24242-24247, 2016 | 52 | 2016 |
| Photoluminescence investigation of high quality GaAs1− xBix on GaAs AR Mohmad, F Bastiman, JS Ng, SJ Sweeney, JPR David Applied Physics Letters 98 (12), 2011 | 47 | 2011 |
| Temperature dependence of AlGaAs soft X-ray detectors AM Barnett, DJ Bassford, JE Lees, JS Ng, CH Tan, JPR David Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2010 | 47 | 2010 |
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