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Sandip Lashkare
Sandip Lashkare
Assistant Professor, IIT Gandhinagar
iitgn.ac.in의 이메일 확인됨
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PCMO RRAM for integrate-and-fire neuron in spiking neural networks
S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly
IEEE Electron Device Letters 39 (4), 484-487, 2018
1422018
Punchthrough-diode-based bipolar RRAM selector by Si epitaxy
VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ...
IEEE Electron Device Letters 33 (10), 1396-1398, 2012
1152012
PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP
S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly
IEEE Electron Device Letters 38 (9), 1212-1215, 2017
522017
PrxCa1− xMnO3 based stochastic neuron for Boltzmann machine to solve “maximum cut” problem
D Khilwani, V Moghe, S Lashkare, V Saraswat, P Kumbhare, ...
APL Materials 7 (9), 2019
242019
Transient joule heating-based oscillator neuron for neuromorphic computing
S Lashkare, P Kumbhare, V Saraswat, U Ganguly
IEEE Electron Device Letters 39 (9), 1437-1440, 2018
222018
A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry
S Lashkare, P Karkare, P Bafna, MVS Raju, VSS Srinivasan, S Lodha, ...
2013 5th IEEE International Memory Workshop, 178-181, 2013
182013
Understanding the Region of Resistance Change in Pr0.7Ca0.3MnO3 RRAM
S Lashkare, V Saraswat, U Ganguly
ACS Applied Electronic Materials 2 (7), 2026-2031, 2020
162020
A simple and efficient SNN and its performance & robustness evaluation method to enable hardware implementation
A Biswas, S Prasad, S Lashkare, U Ganguly
arXiv preprint arXiv:1612.02233, 2016
162016
Stochastic learning in deep neural networks based on nanoscale PCMO device characteristics
AV Babu, S Lashkare, U Ganguly, B Rajendran
Neurocomputing 321, 227-236, 2018
152018
Reaction-Drift Model for Switching Transients in Pr₀. ₇Ca₀. ₃MnO₃-Based Resistive RAM
V Saraswat, S Prasad, A Khanna, A Wagh, A Bhat, N Panwar, S Lashkare, ...
IEEE Transactions on Electron Devices 67 (9), 3610-3617, 2020
132020
High performance triangular barrier engineered NIPIN selector for bipolar RRAM
R Meshram, B Das, R Mandapati, S Lashkare, S Deshmukh, S Lodha, ...
2014 IEEE 6th International Memory Workshop (IMW), 1-4, 2014
122014
Epitaxial Si punch-through based selector for bipolar RRAM
P Bafna, P Karkare, S Srinivasan, S Chopra, S Lashkare, Y Kim, ...
70th Device Research Conference, 115-116, 2012
122012
Nanoscale Side-Contact Enabled Three Terminal Pr0.7Ca0.3MnO3 Resistive Random Access Memory for In-Memory Computing
S Lashkare, S Subramoney, U Ganguly
IEEE Electron Device Letters 41 (9), 1344-1347, 2020
112020
A dual-slope-based capacitance-to-time signal conditioning circuit for leaky capacitive sensors
S Malik, K Kishore, L Somappa, S Lashkare, T Islam, SA Akbar, ...
IEEE Transactions on Instrumentation and Measurement 70, 1-8, 2021
92021
A case for multiple and parallel RRAMs as synaptic model for training SNNs
A Shukla, S Prasad, S Lashkare, U Ganguly
2018 International Joint Conference on Neural Networks (IJCNN), 1-8, 2018
82018
I-NPN: A sub-60mV/decade, sub-0.6 V selection diode for STTRAM
S Deshmukh, S Lashkare, B Rajendran, U Ganguly
71st Device Research Conference, 113-114, 2013
82013
Interlayer-Engineered Local Epitaxial Templating Induced Enhancement in Polarization (2Pr > 70 μC/cm2) in Hf0.5Zr0.5O2 Thin Films
S Rowtu, P Meihar, A Pandey, MH Ali, S Lashkare, U Ganguly
IEEE Transactions on Electron Devices 70 (7), 3536-3541, 2023
72023
Voltage Scaling in Area Scalable Selector-Less PrMnO3 RRAM by N2: O2 Partial Pressure Dependent Annealing
S Lashkare, J Sakhuja, U Ganguly
2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019
62019
Transient joule heating in PrMno3 RRAM enables ReLu type neuron
S Lashkare, A Bhat, P Kumbhare, U Ganguly
2018 Non-Volatile Memory Technology Symposium (NVMTS), 1-4, 2018
62018
Comparison of novel punch-through diode (NPN) selector with MIM selector for bipolar RRAM
S Deshmukh, R Mandapati, S Lashkare, A Borkar, VSS Srivinasan, ...
2012 12th Annual Non-Volatile Memory Technology Symposium Proceedings, 51-54, 2012
62012
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