| Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts, MR Wagner, ... Springer Series in Materials Science 120, 359, 2010 | 783 | 2010 |
| Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B 84 (3), 035313, 2011 | 250 | 2011 |
| Nanophononics: state of the art and perspectives S Volz, J Ordonez-Miranda, A Shchepetov, M Prunnila, J Ahopelto, ... The European Physical Journal B 89, 15, 2016 | 213 | 2016 |
| Reduction of the thermal conductivity in free-standing silicon nano-membranes investigated by non-invasive Raman thermometry E Chávez-Ángel, JS Reparaz, J Gomis-Bresco, MR Wagner, J Cuffe, ... APL Materials 2 (1), 012113, 2014 | 196 | 2014 |
| Ionized and neutral donor-bound excitons in ZnO BK Meyer, J Sann, S Lautenschläger, MR Wagner, A Hoffmann Physical Review B 76 (18), 184120, 2007 | 174 | 2007 |
| Two-Dimensional Phononic Crystals: Disorder Matters MR Wagner, B Graczykowski, JS Reparaz, A El Sachat, M Sledzinska, ... Nano Letters 2016 (16), 5661−5668, 2016 | 161 | 2016 |
| Polarity in GaN and ZnO: Theory, measurement, growth, and devices J Zuniga-Perez, V Consonni, L Lymperakis, X Kong, A Trampert, ... Applied Physics Reviews 3 (4), 2016 | 149 | 2016 |
| Tuning thermal transport in ultrathin silicon membranes by surface nanoscale engineering S Neogi, JS Reparaz, LFC Pereira, B Graczykowski, MR Wagner, ... ACS Nano 9 (4), 3820-3828, 2015 | 144 | 2015 |
| A novel contactless technique for thermal field mapping and thermal conductivity determination: Two-Laser Raman Thermometry JS Reparaz, E Chávez-Angel, MR Wagner, B Graczykowski, ... Review of Scientific Instruments 85 (3), 2014 | 136 | 2014 |
| Thermal conductivity and air-mediated losses in periodic porous silicon membranes at high temperatures B Graczykowski, A El Sachat, JS Reparaz, M Sledzinska, MR Wagner, ... Nature Communications 8 (1), 415, 2017 | 119 | 2017 |
| Temperature-dependent recombination coefficients in InGaN light-emitting diodes: Hole localization, Auger processes, and the green gap F Nippert, SY Karpov, G Callsen, B Galler, T Kure, C Nenstiel, MR Wagner, ... Applied Physics Letters 109 (16), 161103, 2016 | 110 | 2016 |
| Phonon dispersion in hypersonic two-dimensional phononic crystal membranes B Graczykowski, M Sledzinska, F Alzina, J Gomis-Bresco, JS Reparaz, ... Physical Review B 91 (7), 075414, 2015 | 107 | 2015 |
| Lithium related deep and shallow acceptors in Li-doped ZnO nanocrystals C Rauch, W Gehlhoff, MR Wagner, E Malguth, G Callsen, R Kirste, ... Journal of Applied Physics 107 (2), 024311, 2010 | 100 | 2010 |
| Vibrational dynamics in lead halide hybrid perovskites investigated by Raman spectroscopy J Ibaceta-Jaña, R Muydinov, P Rosado, H Mirhosseini, M Chugh, ... Physical Chemistry Chemical Physics 2020 (22), 5604-5614, 2020 | 94 | 2020 |
| Phonon deformation potentials in wurtzite GaN and ZnO determined by uniaxial pressure dependent Raman measurements G Callsen, JS Reparaz, MR Wagner, R Kirste, C Nenstiel, A Hoffmann, ... Applied Physics Letters 98, 061906, 2011 | 80 | 2011 |
| Optical signature of Mg-doped GaN: Transfer processes G Callsen, MR Wagner, T Kure, JS Reparaz, M Bügler, J Brunnmeier, ... Physical Review B—Condensed Matter and Materials Physics 86 (7), 075207, 2012 | 77 | 2012 |
| Influence of substrate surface polarity on homoepitaxial growth of ZnO layers by chemical vapor deposition MR Wagner, TP Bartel, R Kirste, A Hoffmann, J Sann, S Lautenschläger, ... Physical Review B 79 (3), 035307, 2009 | 77 | 2009 |
| Auger recombination in AlGaN quantum wells for UV light-emitting diodes F Nippert, M Tollabi Mazraehno, MJ Davies, MP Hoffmann, HJ Lugauer, ... Applied Physics Letters 113 (7), 071107, 2018 | 75 | 2018 |
| Molecular precursor route to a metastable form of Zinc Oxide C Lizandara Pueyo, S Siroky, S Landsmann, MWE Van Den Berg, ... Chemistry of Materials 22 (14), 4263-4270, 2010 | 69 | 2010 |
| Excited state properties of donor bound excitons in ZnO BK Meyer, J Sann, S Eisermann, S Lautenschlaeger, MR Wagner, ... Physical Review B 82 (11), 115207, 2010 | 67 | 2010 |
Axel HoffmannInstitute of Solid State Physics, Technical University of Berlintu-berlin.de의 이메일 확인됨