| Integration of lead-free ferroelectric on HfO2/Si (100) for high performance non-volatile memory applications S Kundu, D Maurya, M Clavel, Y Zhou, NN Halder, MK Hudait, P Banerji, ... Scientific reports 5 (1), 8494, 2015 | 54 | 2015 |
| Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray … S Kundu, M Clavel, P Biswas, B Chen, HC Song, P Kumar, NN Halder, ... Scientific reports 5 (1), 12415, 2015 | 49 | 2015 |
| Strain-Engineered Biaxial Tensile Epitaxial Germanium for High-Performance Ge/InGaAs Tunnel Field-Effect Transistors M Clavel, P Goley, N Jain, Y Zhu, MK Hudait IEEE Journal of the Electron Devices Society, 2015 | 47 | 2015 |
| An energy-efficient tensile-strained Ge/InGaAs TFET 7T SRAM cell architecture for ultralow-voltage applications JS Liu, MB Clavel, MK Hudait IEEE Transactions on Electron Devices 64 (5), 2193-2200, 2017 | 45 | 2017 |
| Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors MK Hudait, M Clavel, P Goley, N Jain, Y Zhu Scientific Reports 4, 6964, 2014 | 41 | 2014 |
| Tri-gate GaN junction HEMT Y Ma, M Xiao, Z Du, X Yan, K Cheng, M Clavel, MK Hudait, I Kravchenko, ... Applied Physics Letters 117 (14), 2020 | 39 | 2020 |
| Reduced erbium-doped ceria nanoparticles: one nano-host applicable for simultaneous optical down-and up-conversions N Shehata, K Meehan, I Hassounah, M Hudait, N Jain, M Clavel, S Elhelw, ... Nanoscale research letters 9, 1-6, 2014 | 37 | 2014 |
| Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy A Ghosh, MB Clavel, PD Nguyen, MA Meeker, GA Khodaparast, ... Aip Advances 7 (9), 2017 | 34 | 2017 |
| Heterogeneously-grown tunable tensile strained germanium on silicon for photonic devices M Clavel, D Saladukha, PS Goley, TJ Ochalski, F Murphy-Armando, ... ACS Applied Materials & Interfaces 7 (48), 26470-26481, 2015 | 30 | 2015 |
| Enhanced erbium-doped ceria nanostructure coating to improve solar cell performance N Shehata, M Clavel, K Meehan, E Samir, S Gaballah, M Salah Materials 8 (11), 7663-7672, 2015 | 29 | 2015 |
| Direct and indirect band gaps in Ge under biaxial tensile strain investigated by photoluminescence and photoreflectance studies D Saladukha, MB Clavel, F Murphy-Armando, G Greene-Diniz, M Grüning, ... Physical Review B 97 (19), 195304, 2018 | 28 | 2018 |
| Integration of SrTiO3 on Crystallographically Oriented Epitaxial Germanium for Low-Power Device Applications MK Hudait, M Clavel, Y Zhu, PS Goley, S Kundu, D Maurya, S Priya ACS applied materials & interfaces 7 (9), 5471-5479, 2015 | 27 | 2015 |
| TBAL: tunnel FET-based adiabatic logic for energy-efficient, ultra-low voltage IoT applications JS Liu, MB Clavel, MK Hudait IEEE Journal of the Electron Devices Society 7, 210-218, 2019 | 25 | 2019 |
| Magnetic Damping in Epitaxial Alloyed with Vanadium and Aluminum DA Smith, A Rai, Y Lim, TQ Hartnett, A Sapkota, A Srivastava, C Mewes, ... Physical Review Applied 14 (3), 034042, 2020 | 23 | 2020 |
| Design, theoretical, and experimental investigation of tensile-strained germanium quantum-well laser structure MK Hudait, F Murphy-Armando, D Saladukha, MB Clavel, PS Goley, ... ACS Applied Electronic Materials 3 (10), 4535-4547, 2021 | 22 | 2021 |
| Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1–ySby with Tunable Antimony Composition JS Liu, M Clavel, MK Hudait ACS Applied Materials & Interfaces 7 (51), 28624-28631, 2015 | 22 | 2015 |
| Heteroepitaxial Ge MOS Devices on Si Using Composite AlAs/GaAs Buffer P Nguyen, M Clavel, P Goley, J Liu, N Allen, L Guido, M Hudait IEEE Journal of the Electron Devices Society 3 (4), 341-348, 2015 | 22 | 2015 |
| Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films S Wu, DA Smith, P Nakarmi, A Rai, M Clavel, MK Hudait, J Zhao, ... Physical Review B 105 (17), 174408, 2022 | 20 | 2022 |
| Performance evaluation of novel strain-engineered Ge-InGaAs heterojunction tunnel field-effect transistors JS Liu, MB Clavel, MK Hudait IEEE Transactions on Electron Devices 62 (10), 3223-3228, 2015 | 20 | 2015 |
| Magnetic field sensing by exploiting giant nonstrain-mediated magnetodielectric response in epitaxial composites MG Kang, HB Kang, M Clavel, D Maurya, S Gollapudi, M Hudait, ... Nano letters 18 (5), 2835-2843, 2018 | 15 | 2018 |
Prof. Mantu HudaitAssoc. Prof. of ECE, Virginia Tech; Past: Intel Corporation, Ohio State U, IISc-Bangalore, IIT-KGPvt.edu의 이메일 확인됨