| International Atomic Energy Agency intercomparison of ion beam analysis software NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2007 | 107 | 2007 |
| Radiation enhanced silicon self-diffusion and the silicon vacancy at high temperatures H Bracht, JF Pedersen, N Zangenberg, AN Larsen, EE Haller, G Lulli, ... Physical review letters 91 (24), 245502, 2003 | 93 | 2003 |
| Solid-phase epitaxy of amorphous silicon induced by electron irradiation at room temperature G Lulli, PG Merli, MV Antisari Physical Review B 36 (15), 8038, 1987 | 93 | 1987 |
| Summary of “IAEA intercomparison of IBA software” NP Barradas, K Arstila, G Battistig, M Bianconi, N Dytlewski, C Jeynes, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2008 | 88 | 2008 |
| Ion implantation induced swelling in 6H-SiC R Nipoti, E Albertazzi, M Bianconi, R Lotti, G Lulli, M Cervera, A Carnera Applied physics letters 70 (25), 3425-3427, 1997 | 77 | 1997 |
| Determination of He electronic energy loss in crystalline Si by Monte-Carlo simulation of Rutherford backscattering–channeling spectra G Lulli, E Albertazzi, M Bianconi, GG Bentini, R Nipoti, R Lotti Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 65 | 2000 |
| Different methods for the determination of damage profiles in Si from RBS-channeling spectra: a comparison E Albertazzi, M Bianconi, G Lulli, R Nipoti, M Cantiano Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 61 | 1996 |
| Influence of electron-beam parameters on the radiation-induced formation of graphitic onions G Lulli, A Parisini, G Mattei Ultramicroscopy 60 (2), 187-194, 1995 | 56 | 1995 |
| Stopping and damage parameters for Monte Carlo simulation of MeV implants in crystalline Si G Lulli, E Albertazzi, M Bianconi, R Nipoti, M Cervera, A Carnera, ... Journal of applied physics 82 (12), 5958-5964, 1997 | 52 | 1997 |
| Solid-phase epitaxy of implanted silicon at liquid nitrogen and room temperature induced by electron irradiation in the electron microscope F Corticelli, G Lulli, PG Merli Philosophical magazine letters 61 (3), 101-106, 1990 | 36 | 1990 |
| Low-energy recoils in crystalline silicon: Quantum simulations M Mazzarolo, L Colombo, G Lulli, E Albertazzi Physical Review B 63 (19), 195207, 2001 | 31 | 2001 |
| MeV ion implantation induced damage in relaxed A Nylandsted Larsen, C O’Raifeartaigh, RC Barklie, B Holm, F Priolo, ... Journal of applied physics 81 (5), 2208-2218, 1997 | 27 | 1997 |
| Comparison of results and models of solid-phase epitaxial growth of implanted Si layers induced by electron-and ion-beam irradiation G Lulli, PG Merli Physical Review B 47 (21), 14023, 1993 | 25 | 1993 |
| Atomistic modeling of ion channeling in Si with point defects: The role of lattice relaxation S Balboni, E Albertazzi, M Bianconi, G Lulli Physical Review B 66 (4), 045202, 2002 | 24 | 2002 |
| Monte Carlo simulation of ion implantation in crystalline SiC E Albertazzi, G Lulli Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 23 | 1996 |
| The Si surface yield as a calibration standard for RBS M Bianconi, F Abel, JC Banks, AC Font, C Cohen, BL Doyle, R Lotti, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2000 | 22 | 2000 |
| Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted WithIons G Lulli IEEE transactions on electron devices 58 (1), 190-194, 2010 | 21 | 2010 |
| EPR and X-ray diffraction study of damage produced by implantation of B ions (50 keV, 1 MeV) or Si ions (50 keV, 700 keV, 1.5 MeV) into silicon L Sealy, RC Barklie, G Lulli, R Nipoti, R Balboni, S Milita, M Servidori Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1995 | 20 | 1995 |
| Solid phase epitaxy of implanted silicon by electron irradiation at room temperature G Lulli, PG Merli, MV Antisari MRS Online Proceedings Library (OPL) 100, 375, 1988 | 20 | 1988 |
| Dose rate effects on the dynamic annealing mechanism in P+ ‐implanted silicon M Berti, AV Drigo, G Lulli, PG Merli, MV Antisari3 physica status solidi (a) 97 (1), 77-85, 1986 | 20 | 1986 |
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