| Apparatus and Methods for Cyclical Oxidation and Etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ... US Patent App. 12/720,957, 2011 | 727 | 2011 |
| Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET S Dutta, V Kumar, A Shukla, NR Mohapatra, U Ganguly Scientific reports 7 (1), 8257, 2017 | 222 | 2017 |
| Apparatus and Methods for Cyclical Oxidation and Etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ... US Patent App. 12/720,942, 2011 | 214 | 2011 |
| Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof U Ganguly, Y Yokota, J Tang, S Thirupapuliyur, CS Olsen, S Sun, ... US Patent 8,871,645, 2014 | 201 | 2014 |
| Apparatus and methods for cyclical oxidation and etching U Ganguly, JM Ranish, AM Hunter, J Tang, CS Olsen, MD Scotney-Castle, ... | 192 | 2011 |
| PCMO RRAM for integrate-and-fire neuron in spiking neural networks S Lashkare, S Chouhan, T Chavan, A Bhat, P Kumbhare, U Ganguly IEEE Electron Device Letters 39 (4), 484-487, 2018 | 142 | 2018 |
| Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer P Paramahans Manik, R Kesh Mishra, V Pavan Kishore, P Ray, A Nainani, ... Applied Physics Letters 101 (18), 2012 | 137 | 2012 |
| Punchthrough-diode-based bipolar RRAM selector by Si epitaxy VSS Srinivasan, S Chopra, P Karkare, P Bafna, S Lashkare, P Kumbhare, ... IEEE Electron Device Letters 33 (10), 1396-1398, 2012 | 115 | 2012 |
| Design optimization of metal nanocrystal memory—Part I: Nanocrystal array engineering TH Hou, C Lee, V Narayanan, U Ganguly, EC Kan IEEE transactions on electron devices 53 (12), 3095-3102, 2006 | 93 | 2006 |
| Arbitrary spike time dependent plasticity (STDP) in memristor by analog waveform engineering N Panwar, B Rajendran, U Ganguly IEEE Electron Device Letters 38 (6), 740-743, 2017 | 70 | 2017 |
| Nanotube-and nanocrystal-based non-volatile memory Y Zhang, U Ganguly, E Kan US Patent 7,262,991, 2007 | 69 | 2007 |
| Asymmetric electric field enhancement in nanocrystal memories C Lee, U Ganguly, V Narayanan, TH Hou, J Kim, EC Kan IEEE electron device letters 26 (12), 879-881, 2005 | 56 | 2005 |
| Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals U Ganguly, EC Kan, Y Zhang Applied Physics Letters 87 (4), 2005 | 56 | 2005 |
| PCMO-based RRAM and NPN bipolar selector as synapse for energy efficient STDP S Lashkare, N Panwar, P Kumbhare, B Das, U Ganguly IEEE Electron Device Letters 38 (9), 1212-1215, 2017 | 52 | 2017 |
| Threshold voltage variability in nanosheet GAA transistors PH Vardhan, S Ganguly, U Ganguly IEEE Transactions on Electron Devices 66 (10), 4433-4438, 2019 | 47 | 2019 |
| Band gap bowing and band offsets in relaxed and strained Si1− xGex alloys by employing a new nonlinear interpolation scheme S Sant, S Lodha, U Ganguly, S Mahapatra, FO Heinz, L Smith, V Moroz, ... Journal of Applied Physics 113 (3), 2013 | 47 | 2013 |
| Band-to-band tunneling based ultra-energy-efficient silicon neuron T Chavan, S Dutta, NR Mohapatra, U Ganguly IEEE Transactions on Electron Devices 67 (6), 2614-2620, 2020 | 46 | 2020 |
| Ultra-low energy LIF neuron using Si NIPIN diode for spiking neural networks B Das, J Schulze, U Ganguly IEEE Electron Device Letters 39 (12), 1832-1835, 2018 | 43 | 2018 |
| Modification of charge trap silicon nitride with oxygen plasma CS Olsen, TW Poon, U Ganguly, J Swenberg US Patent 8,198,671, 2012 | 40 | 2012 |
| Effect of SiN on performance and reliability of charge trap flash (CTF) under Fowler–Nordheim tunneling program/erase operation C Sandhya, U Ganguly, N Chattar, C Olsen, SM Seutter, L Date, R Hung, ... IEEE electron device letters 30 (2), 171-173, 2008 | 40 | 2008 |
Sandip LashkareAssistant Professor, IIT Gandhinagariitgn.ac.in의 이메일 확인됨