| 1.2-kV vertical GaN fin-JFETs: High-temperature characteristics and avalanche capability J Liu, M Xiao, R Zhang, S Pidaparthi, H Cui, A Edwards, M Craven, ... IEEE Transactions on Electron Devices 68 (4), 2025-2032, 2021 | 103 | 2021 |
| 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities J Liu, M Xiao, Y Zhang, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... 2020 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2020 | 81 | 2020 |
| Surge current and avalanche ruggedness of 1.2-kV vertical GaN pn diodes J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... IEEE Transactions on Power Electronics 36 (10), 10959-10964, 2021 | 64 | 2021 |
| Trap-mediated avalanche in large-area 1.2 kV vertical GaN pn diodes J Liu, M Xiao, R Zhang, S Pidaparthi, C Drowley, L Baubutr, A Edwards, ... IEEE Electron Device Letters 41 (9), 1328-1331, 2020 | 57 | 2020 |
| Breakthrough short circuit robustness demonstrated in vertical GaN fin JFET R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Transactions on Power Electronics 37 (6), 6253-6258, 2021 | 40 | 2021 |
| Tuning avalanche path in vertical GaN JFETs by gate driver design J Liu, R Zhang, M Xiao, S Pidaparthi, H Cui, A Edwards, C Drowley, ... IEEE Transactions on Power Electronics 37 (5), 5433-5443, 2021 | 27 | 2021 |
| Robust through-fin avalanche in vertical GaN fin-JFET with soft failure mode R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang IEEE Electron Device Letters 43 (3), 366-369, 2022 | 26 | 2022 |
| Exponentially adiabatic switching in quantum-dot cellular automata SS Pidaparthi, CS Lent Journal of Low Power Electronics and Applications 8 (3), 30, 2018 | 26 | 2018 |
| Dynamic RON Free 1.2-kV Vertical GaN JFET X Yang, R Zhang, B Wang, Q Song, A Walker, S Pidaparthi, C Drowley, ... IEEE Transactions on Electron Devices 71 (1), 720-726, 2023 | 18 | 2023 |
| Energy dissipation during two-state switching for quantum-dot cellular automata SS Pidaparthi, CS Lent Journal of Applied Physics 129 (2), 2021 | 18 | 2021 |
| Evaluation of Dynamic RON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs X Yang, Q Song, R Zhang, B Wang, S Pidaparthi, A Walker, C Drowley, ... 2024 36th International Symposium on Power Semiconductor Devices and ICs …, 2024 | 9 | 2024 |
| Vertical GaN Fin JFET: A power device with short circuit robustness at avalanche breakdown voltage R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang 2022 IEEE International Reliability Physics Symposium (IRPS), 1-8, 2022 | 9 | 2022 |
| Molecular reorganization energy in quantum-dot cellular automata switching SS Pidaparthi, CS Lent Journal of Applied Physics 131 (4), 2022 | 9 | 2022 |
| Switching performance evaluation of 650 V vertical GaN fin JFET R Zhang, Q Yang, Q Li, Y Zhang, V Padilla, T Pastore, W Meier, ... 2023 IEEE Applied Power Electronics Conference and Exposition (APEC), 2515-2519, 2023 | 8 | 2023 |
| Exceptional repetitive-short-circuit robustness of vertical GaN fin-JFET at high voltage R Zhang, J Liu, Q Li, S Pidaparthi, A Edwards, C Drowley, Y Zhang 2022 IEEE 34th International Symposium on Power Semiconductor Devices and …, 2022 | 7 | 2022 |
| 1.2 kV vertical GaN fin JFETs with robust avalanche and fast switching capabilities 2020 IEEE Int J Liu, M Xiao, Y Zhang, S Pidaparthi, H Cui, A Edwards, L Baubutr, ... Electron Devices Meeting (IEDM), 23.2, 2020 | 6 | 2020 |
| Semiconductor topography and method for reducing gate induced drain leakage (GIDL) in MOS transistors A Khoueir, SS Pidaparthi, HJ Fulford US Patent 8,154,088, 2012 | 6 | 2012 |
| Method and system for fabrication of a vertical fin-based field effect transistor C Drowley, R Milano, SS Pidaparthi, AP Edwards, H Cui, S Sharifzadeh US Patent 11,335,810, 2022 | 5 | 2022 |
| Evaluation and MHz Converter Application of 1.2-kV Vertical GaN JFET X Yang, R Zhang, Q Yang, Q Song, E Litchford, A Walker, S Pidaparthi, ... IEEE Transactions on Power Electronics, 2024 | 4 | 2024 |
| Self-aligned isolation for self-aligned contacts for vertical FETS C Drowley, H Cui, AP Edwards, SS Pidaparthi US Patent 11,996,407, 2024 | 2 | 2024 |
Yuhao ZhangUniversity of Hong Konghku.hk의 이메일 확인됨