| Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency T Takano, T Mino, J Sakai, N Noguchi, K Tsubaki, H Hirayama Applied Physics Express 10 (3), 031002, 2017 | 602 | 2017 |
| Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes H Hirayama, N Maeda, S Fujikawa, S Toyoda, N Kamata Japanese Journal of Applied Physics 53 (10), 100209, 2014 | 596 | 2014 |
| 222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire H Hirayama, S Fujikawa, N Noguchi, J Norimatsu, T Takano, K Tsubaki, ... physica status solidi (a) 206 (6), 1176-1182, 2009 | 526 | 2009 |
| The 2020 UV emitter roadmap H Amano, R Collazo, C De Santi, S Einfeldt, M Funato, J Glaab, ... Journal of Physics D: Applied Physics 53 (50), 503001, 2020 | 478 | 2020 |
| Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes H Hirayama Journal of Applied Physics 97 (9), 2005 | 448 | 2005 |
| 231–261nm AlGaN deep-ultraviolet light-emitting diodes fabricated on AlN multilayer buffers grown by ammonia pulse-flow method on sapphire H Hirayama, T Yatabe, N Noguchi, T Ohashi, N Kamata Applied Physics Letters 91 (7), 2007 | 433 | 2007 |
| Marked enhancement in the efficiency of deep-ultraviolet AlGaN light-emitting diodes by using a multiquantum-barrier electron blocking layer H Hirayama, Y Tsukada, T Maeda, N Kamata Applied Physics Express 3 (3), 031002, 2010 | 414 | 2010 |
| Microassembly of semiconductor three-dimensional photonic crystals K Aoki, HT Miyazaki, H Hirayama, K Inoshita, T Baba, K Sakoda, N Shinya, ... Nature materials 2 (2), 117-121, 2003 | 365 | 2003 |
| III-Nitride ultraviolet emitters M Kneissl, J Rass Springer Series in Materials Science, 2016 | 240 | 2016 |
| Marked enhancement of 320–360 nm ultraviolet emission in quaternary with In-segregation effect H Hirayama, A Kinoshita, T Yamabi, Y Enomoto, A Hirata, T Araki, ... Applied physics letters 80 (2), 207-209, 2002 | 203 | 2002 |
| Room-temperature operation at 333 nm of Al0. 03Ga0. 97N/Al0. 25Ga0. 75N quantum-well light-emitting diodes with Mg-doped superlattice layers A Kinoshita, H Hirayama, M Ainoya, Y Aoyagi, A Hirata Applied Physics Letters 77 (2), 175-177, 2000 | 180 | 2000 |
| Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces H Hirayama, S Tanaka, P Ramvall, Y Aoyagi Applied physics letters 72 (14), 1736-1738, 1998 | 180 | 1998 |
| Recent progress in AlGaN‐based deep‐UV LEDs H Hirayama, S Fujikawa, N Kamata Electronics and Communications in Japan 98 (5), 1-8, 2015 | 165 | 2015 |
| High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer Y Kashima, N Maeda, E Matsuura, M Jo, T Iwai, T Morita, M Kokubo, ... Applied Physics Express 11 (1), 012101, 2017 | 155 | 2017 |
| Determination of photoluminescence mechanism in InGaN quantum wells P Riblet, H Hirayama, A Kinoshita, A Hirata, T Sugano, Y Aoyagi Applied physics letters 75 (15), 2241-2243, 1999 | 146 | 1999 |
| 227 nm AlGaN light-emitting diode with 0.15 mW output power realized using a thin quantum well and AlN buffer with reduced threading dislocation density H Hirayama, N Noguchi, T Yatabe, N Kamata Applied physics express 1 (5), 051101, 2008 | 136 | 2008 |
| Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs H Hirayama, S Fujikawa, J Norimatsu, T Takano, K Tsubaki, N Kamata physica status solidi c 6 (S2 2), S356-S359, 2009 | 119 | 2009 |
| M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy R Armitage, H Hirayama Applied Physics Letters 92 (9), 2008 | 118 | 2008 |
| 222 nm deep-ultraviolet AlGaN quantum well light-emitting diode with vertical emission properties H Hirayama, N Noguchi, N Kamata Applied physics express 3 (3), 032102, 2010 | 117 | 2010 |
| Stimulated emission from optically pumped GaN quantum dots S Tanaka, H Hirayama, Y Aoyagi, Y Narukawa, Y Kawakami, S Fujita, ... Applied physics letters 71 (10), 1299-1301, 1997 | 110 | 1997 |
Sachie FujikawaSaitama Universitymail.saitama-u.ac.jp의 이메일 확인됨
