| Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO J Wang, Z Wang, B Huang, Y Ma, Y Liu, X Qin, X Zhang, Y Dai ACS applied materials & interfaces 4 (8), 4024-4030, 2012 | 1474 | 2012 |
| Evidence of the Existence of Magnetism in Pristine VX2 Monolayers (X = S, Se) and Their Strain-Induced Tunable Magnetic Properties Y Ma, Y Dai, M Guo, C Niu, Y Zhu, B Huang ACS nano 6 (2), 1695-1701, 2012 | 859 | 2012 |
| Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe 2, MoTe 2 and WS 2 monolayers Y Ma, Y Dai, M Guo, C Niu, J Lu, B Huang Physical Chemistry Chemical Physics 13 (34), 15546-15553, 2011 | 530 | 2011 |
| GeP3: A Small Indirect Band Gap 2D Crystal with High Carrier Mobility and Strong Interlayer Quantum Confinement Y Jing, Y Ma, Y Li, T Heine Nano letters 17 (3), 1833-1838, 2017 | 407 | 2017 |
| Ab Initio Prediction and Characterization of Mo2C Monolayer as Anodes for Lithium-Ion and Sodium-Ion Batteries Q Sun, Y Dai, Y Ma, T Jing, W Wei, B Huang The journal of physical chemistry letters 7 (6), 937-943, 2016 | 402 | 2016 |
| Graphene adhesion on MoS 2 monolayer: An ab initio study Y Ma, Y Dai, M Guo, C Niu, B Huang Nanoscale 3 (9), 3883-3887, 2011 | 399 | 2011 |
| Two-dimensional Janus PtSSe for photocatalytic water splitting under the visible or infrared light R Peng, Y Ma, B Huang, Y Dai Journal of materials chemistry A 7 (2), 603-610, 2019 | 339 | 2019 |
| Antimonene Oxides: Emerging Tunable Direct Bandgap Semiconductor and Novel Topological Insulator S Zhang, W Zhou, Y Ma, J Ji, B Cai, SA Yang, Z Zhu, Z Chen, H Zeng Nano Letters 17 (6), 3434–3440, 2017 | 298 | 2017 |
| Two-dimensional III2-VI3 materials: Promising photocatalysts for overall water splitting under infrared light spectrum P Zhao, Y Ma, X Lv, M Li, B Huang, Y Dai Nano Energy 51, 533-538, 2018 | 252 | 2018 |
| Two-dimensional topological insulators: Progress and prospects L Kou, Y Ma, Z Sun, T Heine, C Chen The journal of physical chemistry letters 8 (8), 1905-1919, 2017 | 251 | 2017 |
| Structural and electronic properties of layered arsenic and antimony arsenide L Kou, Y Ma, X Tan, T Frauenheim, A Du, S Smith The Journal of Physical Chemistry C 119 (12), 6918-6922, 2015 | 239 | 2015 |
| Valley polarization in Janus single-layer MoSSe via magnetic doping R Peng, Y Ma, S Zhang, B Huang, Y Dai The journal of physical chemistry letters 9 (13), 3612-3617, 2018 | 234 | 2018 |
| Tunable electronic and dielectric behavior of GaS and GaSe monolayers Y Ma, Y Dai, M Guo, L Yu, B Huang Physical Chemistry Chemical Physics 15 (19), 7098-7105, 2013 | 226 | 2013 |
| Auxetic and ferroelastic borophane: a novel 2D material with negative Possion’s ratio and switchable dirac transport channels L Kou, Y Ma, C Tang, Z Sun, A Du, C Chen Nano letters 16 (12), 7910-7914, 2016 | 206 | 2016 |
| Single-Layer Ag2S: A Two-Dimensional Bidirectional Auxetic Semiconductor R Peng, Y Ma, Z He, B Huang, L Kou, Y Dai Nano Letters 19 (2), 1227-1233, 2019 | 196 | 2019 |
| Robust Two-Dimensional Topological Insulators in Methyl-Functionalized Bismuth, Antimony and Lead Bilayer Films Y Ma, Y Dai, L Kou, T Frauenheim, T Heine Nano letters 15 (2), 1083–1089, 2015 | 191 | 2015 |
| Intrinsic anomalous valley Hall effect in single-layer R Peng, Y Ma, X Xu, Z He, B Huang, Y Dai Physical Review B 102 (3), 035412, 2020 | 164 | 2020 |
| Quantum spin hall insulators in strain-modified arsenene H Zhang, Y Ma, Z Chen Nanoscale 7 (45), 19152-19159, 2015 | 163 | 2015 |
| Graphene/gC 3 N 4 bilayer: considerable band gap opening and effective band structure engineering X Li, Y Dai, Y Ma, S Han, B Huang Physical Chemistry Chemical Physics 16 (9), 4230-4235, 2014 | 155 | 2014 |
| Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations P Zhao, Y Ma, C Lei, H Wang, B Huang, Y Dai Applied Physics Letters 115 (26), 2019 | 149 | 2019 |
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