| A Review on Dielectric Breakdown in Thin Dielectrics: Silicon Dioxide, High‐k, and Layered Dielectrics F Palumbo, C Wen, S Lombardo, S Pazos, F Aguirre, M Eizenberg, F Hui, ... Advanced Functional Materials 30 (18), 1900657, 2020 | 220 | 2020 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 196 | 2021 |
| Hybrid 2D–CMOS microchips for memristive applications K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ... Nature 618 (7963), 57-62, 2023 | 173 | 2023 |
| Hardware implementation of memristor-based artificial neural networks F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ... Nature Communications 15 (1), 1974, 2024 | 112 | 2024 |
| SPICE Implementation of the Dynamic Memdiode Model for Bipolar Resistive Switching Devices FL Aguirre, J Suñé, E Miranda Micromachines 13 (2), 330, 2022 | 43 | 2022 |
| Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching … D Maldonado, F Aguirre, G González-Cordero, AM Roldán, MB González, ... Journal of Applied Physics 130 (5), 054503, 2021 | 35 | 2021 |
| Temperature of conductive nanofilaments in hexagonal boron nitride based memristors showing threshold resistive switching M Lanza, F Palumbo, Y Shi, F Aguirre, S Boyeras, B Yuan, E Yalon, ... Advanced Electronic Materials 8 (8), 2100580, 2022 | 32 | 2022 |
| Spiking neural networks based on two-dimensional materials JB Roldan, D Maldonado, C Aguilera-Pedregosa, E Moreno, F Aguirre, ... npj 2D Materials and Applications 6 (1), 63, 2022 | 31 | 2022 |
| Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda IEEE Access 8, 202174-202193, 2020 | 29 | 2020 |
| Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller S Pazos, W Zheng, T Zanotti, F Aguirre, T Becker, Y Shen, K Zhu, Y Yuan, ... Nanoscale 15 (5), 2171-2180, 2023 | 20 | 2023 |
| Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials S Pazos, F Aguirre, E Miranda, S Lombardo, F Palumbo Journal of Applied Physics 121 (9), 094102, 2017 | 18 | 2017 |
| Memristors with Initial Low‐Resistive State for Efficient Neuromorphic Systems K Zhu, MR Mahmoodi, Z Fahimi, Y Xiao, T Wang, K Bukvišová, M Kolíbal, ... Advanced Intelligent Systems 4 (8), 2200001, 2022 | 17 | 2022 |
| Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides FL Aguirre, A Rodriguez-Fernandez, SM Pazos, J Suñé, E Miranda, ... IEEE Transactions on Electron Devices 66 (8), 3349-3355, 2019 | 17 | 2019 |
| Nano‐Memristors with 4 mV Switching Voltage Based on Surface‐Modified Copper Nanoparticles P Liu, F Hui, F Aguirre, F Saiz, L Tian, T Han, Z Zhang, E Miranda, ... Advanced Materials 34 (20), 2201197, 2022 | 14 | 2022 |
| Minimization of the Line Resistance Impact on Memdiode-Based Simulations of Multilayer Perceptron Arrays Applied to Pattern Recognition FL Aguirre, NM Gomez, SM Pazos, F Palumbo, J Suñé, E Miranda Journal of Low Power Electronics and Applications 11 (1), 9, 2021 | 14 | 2021 |
| SPICE Simulation of RRAM-Based Crosspoint Arrays Using the Dynamic Memdiode Model FL Aguirre, SM Pazos, F Palumbo, J Suñé, E Miranda Frontiers in Physics 8, 548, 2021 | 12 | 2021 |
| Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study SM Pazos, S Boyeras Baldomá, FL Aguirre, I Krylov, M Eizenberg, ... Journal of Applied Physics 127 (17), 174101, 2020 | 12 | 2020 |
| Reliability-aware design space exploration for fully integrated RF CMOS PA S Pazos, F Aguirre, F Palumbo, F Silveira IEEE Transactions on Device and Materials Reliability 20 (1), 33-41, 2019 | 8 | 2019 |
| Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices H García, G Vinuesa, E García-Ochoa, FL Aguirre, MB González, ... Journal of Physics D: Applied Physics 56 (36), 365108, 2023 | 7 | 2023 |
| Simulation of Bipolar-Type Resistive Switching Devices Using a Recursive Approach to the Dynamic Memdiode Model E Miranda, E Piros, FL Aguirre, T Kim, P Schreyer, J Gehrunger, T Oster, ... IEEE Electron Device Letters, 2023 | 6 | 2023 |
Sebastian PazosPhysical Science and Engineering, King Abdullah University of Science and Technologykaust.edu.sa의 이메일 확인됨