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SARA VECCHI
SARA VECCHI
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Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals
S Vecchi, P Pavan, FM Puglisi
Journal of Applied Physics 133 (11), 2023
122023
The relevance of trapped charge for leakage and random telegraph noise phenomena
S Vecchi, P Pavan, FM Puglisi
2022 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2022
82022
The impact of electrostatic interactions between defects on the characteristics of random telegraph noise
S Vecchi, P Pavan, FM Puglisi
IEEE Transactions on Electron Devices 69 (12), 6991-6998, 2022
62022
Defects Motion as the Key Source of Random Telegraph Noise Instability in Hafnium Oxide
S Vecchi, P Pavan, FM Puglisi
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
32022
Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors
S Vecchi, FM Puglisi, P Appelt, R Guido, X Wang, S Slesazeck, ...
Advanced Electronic Materials, 2400204, 2024
22024
The role of defects and interface degradation on ferroelectric HZO capacitors aging
L Benatti, S Vecchi, M Pesic, FM Puglisi
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
A Unified Framework to Explain Random Telegraph Noise Complexity in MOSFETs and RRAMs
S Vecchi, P Pavan, FM Puglisi
2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023
22023
Linking the intrinsic electrical response of ferroelectric devices to material properties by means of impedance spectroscopy
L Benatti, S Vecchi, FM Puglisi
IEEE Transactions on Device and Materials Reliability 23 (3), 309-316, 2023
22023
Impedance spectroscopy of ferroelectric capacitors and ferroelectric tunnel junctions
L Benatti, S Vecchi, FM Puglisi
2022 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2022
22022
The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation
S Vecchi, A Padovani, P Pavan, FM Puglisi
2023 IEEE International Integrated Reliability Workshop (IIRW), 1-7, 2023
12023
Il ruolo della carica intrappolata sull’affidabilità e la degradazione negli ossidi
S Vecchi
Università degli studi di Modena e Reggio Emilia, 2024
2024
From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks
S Vecchi, A Padovani, P Pavan, FM Puglisi
IEEE Transactions on Device and Materials Reliability, 2024
2024
Multilevel switching in ferroelectric hafnia capacitors and tunnel junctions
S Lancaster, P Appelt, S Vecchi, C Silva, T Mikolajick, FM Puglisi, ...
SPECIAL SECTION ON IIRW
L Benatti, S Vecchi, FM Puglisi
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