| Atomic structure of conducting nanofilaments in TiO2 resistive switching memory DH Kwon, KM Kim, JH Jang, JM Jeon, MH Lee, GH Kim, XS Li, GS Park, ... Nature nanotechnology 5 (2), 148-153, 2010 | 2431 | 2010 |
| A review of three‐dimensional resistive switching cross‐bar array memories from the integration and materials property points of view JY Seok, SJ Song, JH Yoon, KJ Yoon, TH Park, DE Kwon, H Lim, GH Kim, ... Advanced Functional Materials 24 (34), 5316-5339, 2014 | 423 | 2014 |
| A detailed understanding of the electronic bipolar resistance switching behavior inPt/TiO2/Pt structure KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ... Nanotechnology 22 (25), 254010, 2011 | 232 | 2011 |
| Highly improved uniformity in the resistive switching parameters of TiO2 thin films by inserting Ru nanodots. JH Yoon, JH Han, JS Jung, W Jeon, GH Kim, SJ Song, JY Seok, KJ Yoon, ... Advanced Materials (Deerfield Beach, Fla.) 25 (14), 1987-1992, 2013 | 208 | 2013 |
| 32× 32 crossbar array resistive memory composed of a stacked Schottky diode and unipolar resistive memory GH Kim, JH Lee, Y Ahn, W Jeon, SJ Song, JY Seok, JH Yoon, KJ Yoon, ... Advanced Functional Materials 23 (11), 1440-1449, 2013 | 200 | 2013 |
| Electrically configurable electroforming and bipolar resistive switching inPt/TiO2/Pt structures KM Kim, GH Kim, SJ Song, JY Seok, MH Lee, JH Yoon, CS Hwang Nanotechnology 21 (30), 305203, 2010 | 184 | 2010 |
| A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switchingmemory arrays WY Park, GH Kim, JY Seok, KM Kim, SJ Song, MH Lee, CS Hwang Nanotechnology 21 (19), 195201, 2010 | 173 | 2010 |
| Study on the electrical conduction mechanism of bipolar resistive switching TiO2 thin films using impedance spectroscopy MH Lee, KM Kim, GH Kim, JY Seok, SJ Song, JH Yoon, CS Hwang Applied Physics Letters 96 (15), 2010 | 128 | 2010 |
| Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM SJ Song, JY Seok, JH Yoon, KM Kim, GH Kim, MH Lee, CS Hwang Scientific reports 3 (1), 3443, 2013 | 113 | 2013 |
| Memristive tri-stable resistive switching at ruptured conducting filaments of a Pt/TiO2/Pt cell KJ Yoon, MH Lee, GH Kim, SJ Song, JY Seok, S Han, JH Yoon, KM Kim, ... Nanotechnology 23 (18), 185202, 2012 | 113 | 2012 |
| Collective motion of conducting filaments in Pt/n‐type TiO2/p‐type NiO/Pt stacked resistance switching memory KM Kim, SJ Song, GH Kim, JY Seok, MH Lee, JH Yoon, J Park, CS Hwang Advanced Functional Materials 21 (9), 1587-1592, 2011 | 102 | 2011 |
| (In, Sn) 2O3∕ TiO2∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ... Applied Physics Letters 92 (16), 2008 | 102 | 2008 |
| Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments G Hwan Kim, J Ho Lee, J Yeong Seok, S Ji Song, J Ho Yoon, ... Applied physics letters 98 (26), 2011 | 101 | 2011 |
| Investigation on the growth initiation of Ru thin films by atomic layer deposition SK Kim, JH Han, GH Kim, CS Hwang Chemistry of materials 22 (9), 2850-2856, 2010 | 97 | 2010 |
| Self-rectifying resistive memory in passive crossbar arrays K Jeon, J Kim, JJ Ryu, SJ Yoo, C Song, MK Yang, DS Jeong, GH Kim Nature communications 12 (1), 2968, 2021 | 94 | 2021 |
| The inlaid AI2O3 tunnel switch for ultrathin ferroelectric films Q Jiang, HJ Lee, GH Kim, CS Hwang Advanced materials 21 (28), 2870-2875, 2009 | 91 | 2009 |
| Filamentary resistive switching localized at cathode interface in NiO thin films KM Kim, BJ Choi, SJ Song, GH Kim, CS Hwang Journal of The Electrochemical Society 156 (12), G213, 2009 | 73 | 2009 |
| A theoretical model for Schottky diodes for excluding the sneak current in cross bar arrayresistive memory GH Kim, KM Kim, JY Seok, HJ Lee, DY Cho, JH Han, CS Hwang Nanotechnology 21 (38), 385202, 2010 | 62 | 2010 |
| Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior JH Yoon, KM Kim, MH Lee, SK Kim, GH Kim, SJ Song, JY Seok, ... Applied Physics Letters 97 (23), 2010 | 59 | 2010 |
| Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory J Ho Lee, G Hwan Kim, Y Bae Ahn, J Woon Park, S Wook Ryu, ... Applied Physics Letters 100 (12), 2012 | 58 | 2012 |
