| Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque S Peng, D Zhu, W Li, H Wu, AJ Grutter, DA Gilbert, J Lu, D Xiong, W Cai, ... Nature Electronics 3 (12), 757-764, 2020 | 169 | 2020 |
| Antiferromagnetic spintronics: An overview and outlook D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu, K Cao, S Peng, ... Fundamental Research 2 (4), 522-534, 2022 | 104 | 2022 |
| Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ... Nature Electronics 6 (6), 425-433, 2023 | 54 | 2023 |
| Giant Perpendicular Magnetic Anisotropy in Mo‐Based Double‐Interface Free Layer Structure for Advanced Magnetic Tunnel Junctions H Cheng, J Chen, S Peng, B Zhang, Z Wang, D Zhu, K Shi, S Eimer, ... Advanced Electronic Materials 6 (8), 2000271, 2020 | 38 | 2020 |
| Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures R Chen, X Wang, H Cheng, KJ Lee, D Xiong, JY Kim, S Li, H Yang, ... Cell Reports Physical Science 2 (11), 2021 | 28 | 2021 |
| Sign Change of Spin-Orbit Torque in Structures D Zhu, T Zhang, X Fu, R Hao, A Hamzić, H Yang, X Zhang, H Zhang, A Du, ... Physical review letters 128 (21), 217702, 2022 | 25 | 2022 |
| Experimental demonstration of voltage-gated spin-orbit torque switching in an antiferromagnet/ferromagnet structure W Li, S Peng, J Lu, H Wu, X Li, D Xiong, Y Zhang, Y Zhang, KL Wang, ... Physical Review B 103 (9), 094436, 2021 | 25 | 2021 |
| First demonstration of three terminal MRAM devices with immunity to magnetic fields and 10 ns field free switching by electrical manipulation of exchange bias DQ Zhu, ZX Guo, A Du, DR Xiong, R Xiao, WL Cai, KW Shi, SZ Peng, ... 2021 IEEE International Electron Devices Meeting (IEDM), 17.5. 1-17.5. 4, 2021 | 15 | 2021 |
| Modulation of thermal stability and spin–orbit torque in IrMn/CoFeB/MgO structures through atom thick W insertion D Xiong, S Peng, J Lu, W Li, H Wu, Z Li, H Cheng, Y Wang, CH Back, ... Applied Physics Letters 117 (21), 2020 | 13 | 2020 |
| Mo-based perpendicularly magnetized thin films with low damping for fast and low-power consumption magnetic memory H Cheng, B Zhang, Y Xu, S Lu, Y Yao, R Xiao, K Cao, Y Liu, Z Wang, ... Science China Physics, Mechanics & Astronomy 65 (8), 287511, 2022 | 10 | 2022 |
| Universal scaling law for chiral antiferromagnetism S Xu, B Dai, Y Jiang, D Xiong, H Cheng, L Tai, M Tang, Y Sun, Y He, ... Nature communications 15 (1), 3717, 2024 | 5 | 2024 |
| Spin-orbit torque efficiency enhancement to tungsten-based SOT-MTJs by interface modification with an ultrathin MgO S Lu, X Ning, H Zhang, S Zhen, X Fan, D Xiong, D Zhu, G Wang, HX Liu, ... Science China Information Sciences 67 (1), 119403, 2024 | 5 | 2024 |
| Correlation of interfacial perpendicular magnetic anisotropy and interlayer exchange coupling in CoFe/W/CoFe structures J Chen, S Peng, D Xiong, H Cheng, H Zhou, Y Jiang, J Lu, W Li, W Zhao Journal of Physics D: Applied Physics 53 (33), 334001, 2020 | 4 | 2020 |
| Process optimization and cryogenic evaluation of spin-orbit torque magnetic random access memory Z Zhang, X Fan, D Xiong, H Sun, X Shang, B Man, C Zhang, S Li, R Su, ... 2024 IEEE International Memory Workshop (IMW), 1-4, 2024 | 2 | 2024 |
| Giant orbit-to-charge conversion induced via the inverse orbital Hall effect R Xu, H Zhang, Y Jiang, H Cheng, Y Xie, Y Yao, D Xiong, Z Zhu, X Ning, ... arXiv preprint arXiv:2308.13144, 2023 | 2 | 2023 |
| Giant Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures R Chen, X Wang, H Cheng, KJ Lee, D Xiong, JY Kim, S Li, H Yang, ... MgO Heterostructures, 2017 | 1 | 2017 |
| Demonstration of 128 Kb SOT-MRAM Chip with 5 ns Write and 15 ns Read Speed, High Endurance Over 1010 and Low ECC-on Bit Error Rate C Jiang, S Lu, Z Zhang, X Fan, D Xiong, J Li, H Liu, G Wang, H Zhang, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| First CMOS-Integrated 128 Kb Antiferromagnet-Based MRAM with Immunity to 3 T Magnetic Fields D Xiong, X Fan, C Jiang, G Wang, HX Liu, H Zhang, S Lu, J Li, H Zhang, ... 2024 IEEE International Electron Devices Meeting (IEDM), 1-4, 2024 | | 2024 |
| Enlarged Thickness Window and Maintained High Spin–Orbit Torque Efficiency for Metastable Tungsten by Increasing Amorphous Crystalline: A Path toward Low-Power MRAM S Lu, R Xiao, J Zhang, X Ning, H Zhang, H Sun, D Xiong, X Fan, H Liu, ... ACS Applied Electronic Materials 7 (1), 86-94, 2024 | | 2024 |
| Orbital Current Driven Magnetic Memory Y Yao, D Zhu, S Lu, H Zhang, D Xiong, HX Liu, K Cao, W Zhao 2024 IEEE International Magnetic Conference-Short papers (INTERMAG Short …, 2024 | | 2024 |